Surface Evaluation of 6H-SiC after Doping by Diffusion

2001 ◽  
Vol 680 ◽  
Author(s):  
Ying Gao ◽  
S. I. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Optical Microscope ◽  
Aluminum Carbide ◽  
Wafer Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
In Doping ◽  
Temperature Diffusion ◽  
P Type ◽  
Doping Profiles ◽  
Secondary Ion

ABSTRACTDoping by diffusion of aluminum into 6H-SiC has been carried out in the temperature range of 1800-2100°C. Aluminum carbide (Al4C3) is thought to be one of the best candidates for a p-type diffusion source material. A thin layer graphite mask was developed to protect the wafer surface from deteriorating by sublimation/epigrowth during high temperature diffusion. High-resolution optical microscope (HROM) and atomic force microscopy (AFM) were employed to evaluate the surface morphology of the diffused samples. The protective mask significantly decreased the surface roughness. In addition, secondary ion mass spectroscopy (SIMS) was used to identify the influence of the thin graphite mask on the diffusion properties in SiC. There were no significant differences in doping profiles in the samples with and without the graphite mask.

Annealing of Ion Implantation Damage in SiC Using a Graphite Mask

1999 ◽  
Vol 572 ◽  
Author(s):  
Chris Thomas ◽  
Crawford Taylor ◽  
James Griffin ◽  
William L. Rose ◽  
M. G. Spencer ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Force Microscopy ◽  
Implantation Damage ◽  
Atomic Force ◽  
Capacitance Voltage ◽  
Implantation Process ◽  
Dopant Atoms ◽  
P Type ◽  
Secondary Ion ◽  
Ion Implanted

ABSTRACTFor p-type ion implanted SiC, temperatures in excess of 1600 °C are required to activate the dopant atoms and to reduce the crystal damage inherent in the implantation process. At these high temperatures, however, macrosteps (periodic welts) develop on the SiC surface. In this work, we investigate the use of a graphite mask as an anneal cap to eliminate the formation of macrosteps. N-type 4H- and 6H-SiC epilayers, both ion implanted with low energy (keV) Boron (B) schedules at 600 °C, and 6H-SiC substrates, ion implanted with Aluminum (Al), were annealed using a Graphite mask as a cap. The anneals were done at 1660 °C for 20 and 40 minutes. Atomic force microscopy (AFM), capacitance-voltage (C-V) and secondary ion mass spectrometry (SIMS) measurements were then taken to investigate the effects of the anneal on the surface morphology and the substitutional activation of the samples. It is shown that, by using the Graphite cap for the 1660 °C anneals, neither polytype developed macrosteps for any of the dopant elements or anneal times. The substitutional activation of Boron in 6H-SiC was about 15%.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Mechanical Interlocking on Leadframe Surface for Bondability of Au Wedge Bond

2016 ◽  
Vol 857 ◽  
pp. 79-82
Author(s):  
Roslina Ismail ◽  
Fuaida Harun ◽  
Azman Jalar ◽  
Shahrum Abdullah
Keyword(s):  
Optical Microscope ◽  
Bonding Process ◽  
Mechanical Interlocking ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies ◽  
Scanning Electron ◽  
Effect Of Surface

This work is a contribution towards the understanding of wire bond integrity and reliability in relation to their microstructural and mechanical properties in semiconductor packaging.The effect of surface roughness and hardness of leadframe on the bondability of Au wedge bond still requires detail analysis. Two type of leadframes namely leadframe A and leadframe B were chosen and scanning electron microscope (SEM) and optical microscope were used to inspect the surface morphology of leadframes and the quality of created Au wedge bond after wire bonding process. It was found that there were significant differences in the surface morphologies between these two leadframes. The atomic force microscopy (AFM) which was utilized to measure the average roughness, Ra of lead finger confirms that leadframe A has the highest Ra with value of 166.46 nm compared to that of leadframe B with value of 85.89 nm. While hardness value of different lead finger from the selected leadframe A and B obtained using Vicker microhardness tester are 180.9 VH and 154.2VH respectively.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

scholarly journals AFM investigation of hyaline cartilage’s surface destruction

2016 ◽  
Author(s):  
Mikhail Ihnatouski ◽  
Dmitriy Karev ◽  
Boris Karev ◽  
Jolanta Pauk ◽  
Kristina Daunoravičienė
Keyword(s):  
Video Camera ◽  
Optical Microscope ◽  
Collagen Fibers ◽  
Force Microscopy ◽  
Digital Video Camera ◽  
Atomic Force ◽  
Reflected Light ◽  
Longitudinal Orientation ◽  
Chronic Progressive Disease ◽  
Surface Destruction

Introduction: Osteoarthritis is a chronic, progressive disease. The aim of this paper is presenting the AFM investigation of cartilage in relation to the assessment of degenerative changes in the surface of hyaline cartilage. It can be useful in choosing the most effective methods of therapy. Methods: Samples were taken from the cartilage surface of the femoral head after its removal during total hip arthroplasty. Images of the surface of the sample were obtained using an optical microscope equipped with a digital video camera, in the reflected light and by atomic force microscopy. Results: The longitudinal orientation of the collagen fibers and sub-fibers beams on the surface, up to a diameter of 50 nm are identified in non-destroyed area sites. Conclusions: Images of the destroyed areas displaying separately passing collagen fibers, strongly exposed to the surface: the size measured and found substructure.

Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping

2015 ◽  
Vol 821-823 ◽  
pp. 929-932 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Gabriele Fisichella ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Free Standing ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Micrometer Scale ◽  
Contact Size ◽  
Step Edges

The electrical properties of the interface between quasi free standing bilayer graphene (QFBLG) and SiC(0001) have been investigated by nanoscale resolution current measurements using conductive atomic force microscopy (CAFM). I-V analyses were carried out on Au-capped QFBLG contacts with different sizes (from 200 down to 0.5 μm) fabricated on SiC samples with different miscut angles (from on-axis to 3.5° off-axis). The extracted QFBLG/SiC Schottky barrier height (SBH) was found to depend on the contact size. SBH values ∼0.9-1 eV were obtained for large contacts, whereas a gradual increase was observed below a critical (micrometer scale) contact size (depending on the SiC miscut angle) up to values approaching ∼1.5 eV. Nanoscale resolution current mapping on bare QFLBG contacts revealed that SiC step edges and facets represent preferential current paths causing the effective SBH lowering for larger contacts. The reduced barrier height in these regions can be explained in terms of a reduced doping of QFBLG from SiC substrate at (11-20) step edges with respect to the p-type doping on the (0001) terraces.

Atomic Force Microscopy of Annealed Plain Carbon Steels

2015 ◽  
Author(s):  
Surendra Kumar Gupta ◽  
Patricia Iglesias Victoria
Keyword(s):  
Atomic Force Microscopy ◽  
Optical Microscopy ◽  
Interlamellar Spacing ◽  
Lamellar Spacing ◽  
Optical Microscope ◽  
Carbon Steels ◽  
Force Microscopy ◽  
Atomic Force

Microstructure of annealed plain carbon steels is examined using optical microscopy. When the inter-lamellar spacing in pearlite is small, optical microscope at 1000X is unable to resolve the ferrite and cementite lamellae. In hyper-eutectoid steels, cementite in pearlite appears as darker phase whereas the pro-eutectoid cementite appears as a lighter phase. Atomic force microscopy (AFM) of etched steels is able to resolve ferrite and cementite lamellae in pearlite at similar magnifications. Both cementite in pearlite as well as pro-eutectoid cementite appear as raised areas (hills) in AFM images. Interlamellar spacing in pearlite increases with increasing hardenability of steel.

Laser cleaning of exfoliated graphene

2012 ◽  
Vol 1455 ◽  
Author(s):  
Oliver Ochedowski ◽  
Benedict Kleine Bußmann ◽  
Marika Schleberger
Keyword(s):  
Local Heating ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ambient Conditions ◽  
Kelvin Probe ◽  
Structural Modifications ◽  
Force Microscopy ◽  
Exfoliated Graphene ◽  
Atomic Force ◽  
P Type

ABSTRACTWe have employed atomic force and Kelvin-Probe force microscopy to study graphene sheets exfoliated on TiO2 under the influence of local heating achieved by laser irradiation. Exfoliation and irradiation took place under ambient conditions, the measurements were performed in ultra high vacuum. We show that after irradiation times of 6 min, an increase of the surface potential is observed which indicates a decrease of p-type carrier concentration. We attribute this effect to the removal of adsorbates like water and oxygen. After irradiation times of 12 min our topography images reveal severe structural modifications of graphene. These resemble the nanocrystallite network which form on graphene/SiO2 but after much longer irradiation times. From our results we propose that short laser heating at moderate powers might offer a way to clean graphene without inducing unwanted structural modifications.

Stable Low Resistance Ohmic Contacts To p-GaN

2001 ◽  
Vol 680 ◽  
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson
Keyword(s):  
Contact Resistance ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Depth Profiling ◽  
Force Microscopy ◽  
Low Resistance ◽  
Atomic Force ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
P Type

ABSTRACTStable and low-resistance Ohmic contacts are especially important for laser diodes where high current levels are required. Good contacts are especially difficult on p-type GaN which was the motivation for this study. The GaN was epitaxially grown on (0001) sapphire substrates by MOCVD. Resistivity of this layer was 3.5 Ohm-cm and thickness was 2 microns. After conventional cleaning followed by treatment in boiling HNO3: HCl (1:3), metallization was by thermally evaporating 40 nm Au / 60 nm Ni or 70 nm Au / 55 nm Pd. Heat treatment in O2 + N2 at various temperatures followed, with best results at 600 °C or 700 °C, respectively. Best values of the contact resistance were 1.8×10−4 Ohm-cm2 for Pd/Au and 2.65×10−4 Ohm-cm2 for Ni/Au contacts. After repetitive cycling from room temperature to 600 °C, the Ni contacts were very stable and more stable than the Pd contacts. X-ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts whereas the Pd/Au contacts exhibited a Pd: Au solid solution. Some contacts were quenched in liquid nitrogen following sintering. These contacts were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current-voltage-temperature analysis revealed that conduction was predominantly by thermionic field emission.

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