Thin Film Characterization Using the Point-Deflection Method

2001 ◽  
Vol 695 ◽  
Author(s):  
Ning Tang ◽  
Roxann L. Engelstad ◽  
Edward G. Lovell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transverse Load ◽  
Internal Stresses ◽  
Boundary Constraints ◽  
Thin Film Characterization ◽  
Out Of Plane ◽  
Average Internal Stress ◽  
Low Sensitivity ◽  
Plane Displacement

ABSTRACTThe Point-Deflection Method is a potentially useful technique for measuring the internal stresses of freestanding thin films. By applying a small concentrated transverse load at the center of a pre-stretched film, and measuring the corresponding out-of-plane displacement at appropriate locations, the average internal stress can be readily determined. The load-deflection relationship has been derived for both circular and rectangular shapes. The method involves no additional micromachining in sample preparation and has low sensitivity to the variations in boundary constraints. Its feasibility has been further substantiated with finite element simulations from a variety of perspectives, as well as experimental correlations from the stress measurements of a photomask pellicle film.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Principal Residual Strains as A function of Depth for Sputter Deposited Mo Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
L. J. Parfitt ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Out Of Plane ◽  
Residual Strains ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Principal Strains

AbstractTraditionally, the magnitude of the stress in a thin film is obtained by measuring the curvature of the film-substrate couple; however, these techniques all measure the average stress throughout the film thickness. On a microscopic level, the details of the strain distribution as a function of depth through the thickness of the film can have important consequences in governing film quality and ultimate morphology. A new method for determining the magnitude of principal strains (strain eigenvalues) as a function of x-ray penetration depth using grazing incidence x-ray scattering for a polycrystalline thin film will be described. Results are reported for two Mo metallizations ˜ 500 Å and ˜1000 Å thick sputtered onto Si {100} substrates. The magnitude of the principal strains at several penetration depths was accomplished by an analysis of the diffraction peak shifts of at least six independent {hkl} scattering vectors from the Mo thin films. An out-of-plane strain gradient was identified in both Mo films and the strain eigenvalues were found to be anisotropic in nature. This new methodology should work with a variety of thin films and hence would provide quantitative insight into the evolution of thin film microstructure.

Sensing of Ethanol with Nanosize FeZnO Thin Films

2008 ◽  
Vol 47-50 ◽  
pp. 1117-1120
Author(s):  
G.H. Kuo ◽  
H. Paul Wang ◽  
H.H. Hsu ◽  
Chih Ju G. Jou ◽  
Y.M. Chiu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Sensitivity ◽  
Zno Thin Films ◽  
X Ray ◽  
Doped Zno ◽  
Low Sensitivity ◽  
X Ray Absorption ◽  
Exafs Spectra

In the present work, sensing of ethanol on the ZnO thin films doped with Fe (5-50%) have been investigated. Nature of the sensing species in the nanosize Fe-doped ZnO (FeZnO) thin films has also been studied by in situ extended X-ray absorption fine structure (EXAFS) spectroscopy. By XRD, it is found that ZnO and ZnFe2O4 are the main compounds in the ZnO-Fe thin films. The thin film containing 5% of Fe has a high sensitivity (Rair/Rethanol>80) when sensing of ethanol at 300 K. On the contrary, the thin films with Fe fractions of 20-50% have a very low sensitivity to ethanol (Rair/Rethanol<15). In the presence of ethanol, the EXAFS spectra show that the bond distances of Zn-O and Fe-O in the thin films are 1.90 and 1.98 Å, respectively and restored to 1.91 and 1.97 Å in the absence of ethanol.

scholarly journals Theoretical investigation of the platinum substrate influence on BaTiO3 thin film polarisation

2019 ◽  
Vol 21 (8) ◽  
pp. 4367-4374 ◽  
Author(s):  
Pierre-Marie Deleuze ◽  
Agnes Mahmoud ◽  
Bruno Domenichini ◽  
Céline Dupont
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Density Functional Theory ◽  
Theoretical Investigation ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Out Of Plane ◽  
Batio3 Thin Film ◽  
Substrate Influence

Density functional theory calculations are performed to study the out-of-plane polarisation in BaTiO3 (BTO) thin films epitaxially grown on platinum.

scholarly journals A three-degree-of-freedom thin-film PZT-actuated microactuator with large out-of-plane displacement

2014 ◽  
Vol 24 (7) ◽  
pp. 075017 ◽  
Author(s):  
Jongsoo Choi ◽  
Zhen Qiu ◽  
Choong-Ho Rhee ◽  
Thomas Wang ◽  
Kenn Oldham
Keyword(s):  
Thin Film ◽  
Degree Of Freedom ◽  
Out Of Plane ◽  
Plane Displacement ◽  
Three Degree Of Freedom

Advanced Resonant-Ultrasound Spectroscopy for Studying Anisotropic Elastic Constants of Thin Films

2005 ◽  
Vol 875 ◽  
Author(s):  
Hirotsugu Ogi ◽  
Nobutomo Nakamura ◽  
Hiroshi Tanei ◽  
Masahiko Hirao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Elastic Constants ◽  
Elastic Anisotropy ◽  
Thickness Direction ◽  
Resonant Ultrasound Spectroscopy ◽  
Out Of Plane ◽  
Resonant Ultrasound ◽  
Anisotropic Elastic

AbstractThis paper presents two advanced acoustic methods for the determination of anisotropic elastic constants of deposited thin films. They are resonant-ultrasound spectroscopy with laser-Doppler interferometry (RUS/Laser method) and picosecond-laser ultrasound method. Deposited thin films usually exhibit elastic anisotropy between the film-growth direction and an in-plane direction, and they show five independent elastic constants denoted by C11,C33,C44,C66 and C13 when the x3 axis is set along the film-thickness direction. The former method determines four moduli except C44, the out-of-plane shear modulus, through free-vibration resonance frequencies of the film/substrate specimen. This method is applicable to thin films thicker than about 200 nm. The latter determines C33, the out-of-plane modulus, accurately bymeasuring the round-trip time of the longitudinal wave traveling along the film-thickness direction. This method is applicable to thin films thicker than about 20 nm. Thus, combination of these two methods allows us to discuss the elastic anisotropy of thin films. The results for Co/Pt superlattice thin film and copper thin film are presented.

Plasma focus method for growth of molybdenum nitride thin films: Synthesis and thin film characterization

2017 ◽  
Vol 727 ◽  
pp. 978-985 ◽  
Author(s):  
Marzieh Shirazi ◽  
Maryam Ghasemloo ◽  
G. Reza Etaati ◽  
Mohammad Taghi Hosseinnejad ◽  
Mohammad Reza Toroghinejad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Focus ◽  
Molybdenum Nitride ◽  
Thin Film Characterization

Wide-range three-dimensional reciprocal-space mapping: a novel approach applied to organic monodomain thin films

2007 ◽  
Vol 40 (3) ◽  
pp. 580-582 ◽  
Author(s):  
R. Resel ◽  
O. Lengyel ◽  
T. Haber ◽  
O. Werzer ◽  
W. Hardeman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Ray Method ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Novel Approach ◽  
Wide Range ◽  
Thin Film Characterization

An X-ray method is presented to characterize thin films with unknown crystal structure with specific crystal orientations. The method maps large volumes of the reciprocal space by a series of pole-figure measurements using a standard texture goniometer. The data can be used for lattice indexing and texture evaluation and in subsequent steps for a complete structural thin-film characterization. The application of the method is demonstrated on an organic monodomain thin film consisting of uniaxially aligned crystallites.

STRAIN DECONCENTRATION IN THIN FILMS PATTERNED WITH CIRCULAR HOLES

2009 ◽  
Vol 01 (04) ◽  
pp. 557-568 ◽  
Author(s):  
MATTHEW B. TUCKER ◽  
TENG LI
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Flexible Electronics ◽  
Strain Concentration ◽  
Hole Edge ◽  
Small Strains ◽  
Loading Direction ◽  
Applied Tension ◽  
Out Of Plane ◽  
Circular Holes

It is well known that a circular hole in a blanket thin film causes strain concentration near the hole edge when the thin film is under tension. The increased strain level can be as high as three times of the applied tension. Interestingly, we show that, by suitably patterning an array of circular holes in a thin film, the resulting strain in the patterned film can be decreased to only a fraction of the applied tension, even at the hole edges. The strain deconcentration in the film originates from the following deformation mechanism: while initially planar, the film patterned with circular holes elongates by deflecting out of plane, so that a large tension induces only small strains. Using finite element simulations, we investigate the effects of geometric parameters (i.e., hole size, spacing, and pattern) and loading direction on the resulting strain in patterned thin films under tension. The large deformability of the patterned film is independent of materials and length scale, and thus sheds light on a potential architecture concept for flexible electronics.

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