Formation of Au-Si Metastable Phases by Ion Mixing

1981 ◽  
Vol 7 ◽  
Author(s):  
Bai-Xin Liu ◽  
Leszek S. Wieluniski ◽  
Martti MÄenpÄÄ ◽  
Marc-A. Nicolet ◽  
S. S. Lau
Keyword(s):  
Thermal Decomposition ◽  
Steady State ◽  
Thermal Annealing ◽  
Amorphous Alloys ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Structure ◽  
Metastable Phases ◽  
Formation Mechanisms ◽  
Crystalline Phases

ABSTRACTAmorphous and three metastable crystalline phases have been formed in the Au-Si system by 300 keV Xe ion mixing using multilayered samples with average compositions of Au2Si8, AuSi, and Au7 Si3. Generally speaking, during the different stages of irradiation at liquid nitrogen temperature (LNT) or room temperature (R.T.), metastable crystalline phases are formed initially, and eventually an amorphous structure is obtained. Thermal decomposition of amorphous alloys yield different metastable crystalline phases. Some of the metastable crystalline phases can be formed directly from multilayered samples by steady-state thermal annealing. The formation mechanisms of metastable phases are discussed in terms of the processes involved in ion mixing and thermal annealing.

Magnetic Polyolefin-based Nanocomposites

2013 ◽  
Vol 1499 ◽  
Author(s):  
Qingliang He ◽  
Suying Wei ◽  
Zhanhu Guo
Keyword(s):  
Thermal Decomposition ◽  
Magnetic Nanoparticles ◽  
Room Temperature ◽  
Magnetic Particles ◽  
Formation Mechanisms ◽  
Gravimetric Analysis ◽  
One Pot ◽  
Metallic Precursor ◽  
Transmission Electron

ABSTRACTMagnetic polyolefin-based nanocomposites were fabricated through a facile one-pot thermal decomposition of organo-metallic precursor, i.e. Fe(CO)5 in polymer-solvent solution condition. The whole fabrication includes dissolution of polyolefin-based hosting matrix in refluxing organic solvent followed by the injection of metallic precursor to perform the in-situ thermal decomposition step. The particle sizes, morphology and dispersion quality of these in-situ synthesized magnetic nanoparticles were investigated by transmission electron microscopy (TEM). Room temperature mössbauer spectrum analysis was used to determine the species of these magnetic nanoparticles. Room temperature magnetic property investigation was utilized to further reveal the magnetic behaviors of these nanocomposites by specifying the saturation magnetization and coercive forces. Thermal gravimetric analysis (TGA) was used to determine the thermal stability of these as-prepared nanocomposites and the particle loadings. The formation mechanisms of these magnetic particles were proposed from the evidence of TEM observations and detailed evolutions are detailed as well.

Structure of pure metallic and semiconductor glasses

1990 ◽  
Vol 48 (4) ◽  
pp. 142-143
Author(s):  
Louis M. Holzman ◽  
Yeon-Wook Kim ◽  
Thomas F. Kelly
Keyword(s):  
Distribution Function ◽  
Radial Distribution Function ◽  
Amorphous Alloys ◽  
Amorphous Materials ◽  
Room Temperature ◽  
Amorphous State ◽  
Amorphous Structure ◽  
Pure Element ◽  
Diffraction Patterns ◽  
Semiconductor Glasses

There has been a great deal of interest in amorphous materials as the advance of technology has enabled a greater variety of alloys and elements to be quenched into the amorphous state and as new uses for amorphous materials have been developed. Because the analysis of the structure of amorphous alloys is quite complicated, it is highly desirable to have specimens available of pure elements in the amorphous state in order to more easily study amorphous structure and for comparison with theory. However, very few pure elements have been quenched into the amorphous state and most of those that have been are only stable at temperatures close to absolute zero. This has limited the methods available for the study of their structure. We have produced room-temperature-stable amorphous samples of pure elements (V,Nb,Ta,Mo,W,Fe,Co,Ni,Si,Ge) from the melt using electrohydrodynamic (EHD) atomization. Diffraction patterns of these samples were obtained using a Vacuum Generators HB501 STEM and these patterns were analyzed to obtain the radial distribution function for the pure element specimens.

Influence of the Temperature of Implantation on the Morphology of Defects in MeV Implanted GaAs.

1989 ◽  
Vol 147 ◽  
Author(s):  
G. Braunstein ◽  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Rajeswaran.
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Room Temperature ◽  
Surface Region ◽  
Amorphous Region ◽  
Liquid Nitrogen Temperature ◽  
Dislocation Loops ◽  
Near Surface ◽  
Epitaxial Regrowth

AbstractWe have studied the influence of the temperature of implantation on the morphology of the defects created during 1-MeV implantation of Si into GaAs, using RBS-channeling and TEM. The annealing behavior of the disorder has also been investigated.Implantation at liquid-nitrogen temperature results in the amorphization of the implanted sample for doses of 2×1014 cm−2 and larger. Subsequent rapid thermal annealing at 900°C for 10 seconds leads to partial epitaxial regrowth of the amorphous layer. Depending on the implantation dose, the regrowth can proceed from both the front and back ends of the amorphous region or only from the deep end of the implanted zone. Nucleation and growth of a polycrystalline phase occurs concurrently, limiting the extent of the epitaxial regrowth. After implantation at room temperature and above, two distinct types of residual defects are observed or inferred: point defect complexes and dislocation loops. Most of the point defects disappear after rapid thermal annealing at temperatures ≥ 700°C. The effect of annealing on the dislocation loops depends on the distance from the surface of the sample. Those in the near surface region disappear upon rapid thermal annealing at 700°C, whereas the loops located deeper in the sample grow in size and begin to anneal out only at temperatures in excess of 900°C. Implantation at temperatures of 200 - 300°C results in a large reduction in the number of residual point defects. Subsequent annealing at 900°C leads to a nearly defect-free surface region and, underneath that, a buried band of partial dislocation loops similar to those observed in the samples implanted at room temperature and subsequently annealed.

Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88

1994 ◽  
Vol 342 ◽  
Author(s):  
D. Y. C. Lie ◽  
J. H. Song ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
X Ray ◽  
Projected Range

ABSTRACTPseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 x 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray doublecrystal diffraction. For a dose of 5 x 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.

Rare gas bubbles in muscovite mica implanted with xenon and krypton

1994 ◽  
Vol 9 (12) ◽  
pp. 3095-3107 ◽  
Author(s):  
G.A. Hishmeh ◽  
L. Cartz ◽  
F. Desage ◽  
C. Templier ◽  
J.C. Desoyer ◽  
...  
Keyword(s):  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Structure ◽  
Dark Field ◽  
Rare Gas ◽  
Rare Gases ◽  
Transmission Electron ◽  
Dark Field Microscopy ◽  
Muscovite Mica ◽  
Gas Pressures

Xenon and krypton have been implanted into muscovite mica at room temperature and at liquid nitrogen temperature. The behavior of the implanted Xe and Kr was followed by low-temperature transmission electron microscopy and energy dispersive x-ray analysis. An electron diffraction pattern of diffuse bands is observed at room temperature due to the presence of fluid rare gas and to noncrystalline mica. Visible cavities with diameters 10–300 nm formed in the Xe-implanted mica. Visible cavities in room-temperature Kr-implanted mica ranged from 5–50 nm in diameter. The gas pressures at room temperature in the cavities are estimated, assuming all of the implanted gas precipitated in cavities to be ∼10 MPa for Xe and ∼20 MPa for Kr. These pressures are considerably lower than found for rare gases implanted in metals and ceramics, but sufficient to liquefy the rare gases at room temperature. The Xe and Kr were observed by dark-field microscopy to form fcc crystalline solids within the cavities at temperatures below their triple points, with lattice parameters of a(xe) = 0.630 ± 0.0015 nm and a(Kr) = 0.565 ± 0.005 nm. The solid Xe within bubbles was unstable under the electron beam of the transmission electron microscope at temperatures above 80 K, while the solid Kr within bubbles was unstable at temperatures as low as 35 K. The crystalline mica matrix undergoes a transformation from a crystalline structure to an amorphous structure as a result of implantation.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Spherulite Structures in a Melt Spun Fe-Ni Austenitic Steel

1985 ◽  
Vol 43 ◽  
pp. 52-53
Author(s):  
G. M. Michal ◽  
T. K. Glasgow ◽  
T. J. Moore
Keyword(s):  
Austenitic Steel ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Large Range ◽  
Amorphous Structure ◽  
Nucleation And Growth ◽  
Ni Alloys ◽  
Melt Spun ◽  
Crystal Fibers ◽  
Rapidly Solidified

Large additions of B to Fe-Ni alloys can lead to the formation of an amorphous structure, if the alloy is rapidly cooled from the liquid state to room temperature. Isothermal aging of such structures at elevated temperatures causes crystallization to occur. Commonly such crystallization pro ceeds by the nucleation and growth of spherulites which are spherical crystalline bodies of radiating crystal fibers. Spherulite features were found in the present study in a rapidly solidified alloy that was fully crysstalline as-cast. This alloy was part of a program to develop an austenitic steel for elevated temperature applications by strengthening it with TiB2. The alloy contained a relatively large percentage of B, not to induce an amorphous structure, but only as a consequence of trying to obtain a large volume fracture of TiB2 in the completely processed alloy. The observation of spherulitic features in this alloy is described herein. Utilization of the large range of useful magnifications obtainable in a modern TEM, when a suitably thinned foil is available, was a key element in this analysis.

ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

2019 ◽  
pp. 56-66
Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Titanium Carbide ◽  
Temperature Dependence ◽  
Carbon Concentration ◽  
Room Temperature ◽  
Thermodynamic Characteristics ◽  
Liquid Nitrogen Temperature ◽  
Analysis Data ◽  
Thermal Excitation

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

Substituent Effects on the Thermal Decomposition of Phosphate Esters on Ferrous Surfaces

2019 ◽  
Author(s):  
James Ewen ◽  
Carlos Ayestaran Latorre ◽  
Arash Khajeh ◽  
Joshua Moore ◽  
Joseph Remias ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Film Formation ◽  
Substituent Effects ◽  
Vapour Phase ◽  
Industrial Applications ◽  
Phosphate Esters ◽  
Antiwear Additives ◽  
Formation Mechanisms ◽  
Phosphate Ester ◽  
Wide Range

<p>Phosphate esters have a wide range of industrial applications, for example in tribology where they are used as vapour phase lubricants and antiwear additives. To rationally design phosphate esters with improved tribological performance, an atomic-level understanding of their film formation mechanisms is required. One important aspect is the thermal decomposition of phosphate esters on steel surfaces, since this initiates film formation. In this study, ReaxFF molecular dynamics simulations are used to study the thermal decomposition of phosphate esters with different substituents on several ferrous surfaces. On Fe<sub>3</sub>O<sub>4</sub>(001) and α-Fe(110), chemisorption interactions between the phosphate esters and the surfaces occur even at room temperature, and the number of molecule-surface bonds increases as the temperature is increased from 300 to 1000 K. Conversely, on hydroxylated, amorphous Fe<sub>3</sub>O<sub>4</sub>, most of the molecules are physisorbed, even at high temperature. Thermal decomposition rates were much higher on Fe<sub>3</sub>O<sub>4</sub>(001) and particularly α-Fe(110) compared to hydroxylated, amorphous Fe<sub>3</sub>O<sub>4</sub>. This suggests that water passivates ferrous surfaces and inhibits phosphate ester chemisorption, decomposition, and ultimately film formation. On Fe<sub>3</sub>O<sub>4</sub>(001), thermal decomposition proceeds mainly through C-O cleavage (to form surface alkyl and aryl groups) and C-H cleavage (to form surface hydroxyls). The onset temperature for C-O cleavage on Fe<sub>3</sub>O<sub>4</sub>(001) increases in the order: tertiary alkyl < secondary alkyl < primary linear alkyl ≈ primary branched alkyl < aryl. This order is in agreement with experimental observations for the thermal stability of antiwear additives with similar substituents. The results highlight surface and substituent effects on the thermal decomposition of phosphate esters which should be helpful for the design of new molecules with improved performance.</p>

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