Performance and Reliability of thin Gate Dielectrics for VLSI: Materials and Processing Perspective

1986 ◽  
Vol 71 ◽  
Author(s):  
R. Singh
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectrics ◽  
Current Trends ◽  
High Dielectric ◽  
Rapid Isothermal Processing ◽  
Gate Dielectric Material

AbstractCurrent trends are in the direction of submicron MOSFETs employing gate dielectrics in the thickness range of about 30 - 100A°. The performance and reliability of submicron MOSFETs can be improved by using high dielectric constant gate dielectric material. A new concept involving 2 or more dielectric material is proposed in this paper. In- situ rapid isothermal processing is proposed for the fabrication of thin gate dielectrics.

scholarly journals High dielectric constant and capacitance in ultrasmall (2.5 nm) SrHfO3 perovskite nanoparticles produced in a low temperature non-aqueous sol–gel route

RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 51493-51502 ◽  
Author(s):  
Mohamed Karmaoui ◽  
E. Venkata Ramana ◽  
David M. Tobaldi ◽  
Luc Lajaunie ◽  
Manuel P. Graça ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Sol Gel ◽  
High Dielectric ◽  
Perovskite Nanoparticles ◽  
Gate Dielectric Material

Strontium hafnium oxide (SrHfO3) has great potential as a high-k gate dielectric material, for use in memories, capacitors, CMOS and MOSFETs.

Study of SrTiO3 Gate Dielectrics

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Substrate ◽  
Interfacial Layer ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
High Quality ◽  
High Dielectric

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Skin–core structured fluorinated MWCNTs: a nanofiller towards a broadband dielectric material with a high dielectric constant and low dielectric loss

2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Epoxy Composite ◽  
Low Dielectric ◽  
High Dielectric

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

scholarly journals High Dielectric Constant Study of TiO2-Polypyrrole Composites with Low Contents of Filler Prepared byIn SituPolymerization

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Khalil Ahmed ◽  
Farah Kanwal ◽  
Shahid M. Ramay ◽  
Asif Mahmood ◽  
Shahid Atiq ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Filler Content ◽  
Aqueous Dispersion ◽  
Gravimetric Analysis ◽  
X Ray ◽  
Crystalline Nature ◽  
High Dielectric ◽  
Thermal Stability Of

TiO2/polypyrrole composites with high dielectric constant have been synthesized byin situpolymerization of pyrrole in an aqueous dispersion of low concentration of TiO2, in the presence of small amount of HCl. Structural, optical, surface morphological, and thermal properties of the composites were investigated by X-ray diffractometer, Fourier transform infrared spectroscopy, field-emission scanning electron microscopy, and thermogravimetric analysis, respectively. The data obtained from diffractometer and thermal gravimetric analysis confirmed the crystalline nature and thermal stability of the prepared composites. The dielectric constant of 5 wt% TiO2increased with filler content up to 4.3 × 103at 1 kHz and then decreased to 1.25 × 103at 10 kHz.

scholarly journals In situ synthesis of high dielectric constant GNPs/PBO nanocomposites with enhanced thermostability

2019 ◽  
Vol 2 (3) ◽  
pp. 97-102 ◽  
Author(s):  
Yi Chen ◽  
Zhen Kong ◽  
Wenqi Chen ◽  
Lv Xiao ◽  
Yong Yuan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
In Situ Synthesis ◽  
High Dielectric

scholarly journals Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39115-39119 ◽  
Author(s):  
Jong-Baek Seon ◽  
Nam-Kwang Cho ◽  
Gayeong Yoo ◽  
Youn Sang Kim ◽  
Kookheon Char
Keyword(s):  
Dielectric Constant ◽  
Zirconium Oxide ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Sol Gel ◽  
High Mobility ◽  
Dielectric Films ◽  
Solution Processed ◽  
High Dielectric ◽  
P Type

Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

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