Texture and microtexture of copper films prepared by the self-ion assisted deposition technique on barrier layers with different structure

2002 ◽  
Vol 721 ◽  
Author(s):  
Oleg V. Kononenko ◽  
Victor N. Matveev ◽  
Andrei G. Vasiliev ◽  
Ivan Khorin ◽  
Tejodher Muppidi ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Layer Structure ◽  
Microstructural Analysis ◽  
Orientation Imaging Microscopy ◽  
Silicon Substrates ◽  
Copper Films ◽  
Deposition Technique ◽  
Cu Films ◽  
Barrier Layers ◽  
Orientation Imaging

AbstractCu may diffuse into the active areas of semiconductors resulting in degradation of the devices. Therefore Cu is isolated from silicon wafers by barrier layers. In this study, copper films were deposited onto silicon substrates coated using polycrystalline Ta3N5 and amorphous α-C:H barrier by the partially ionized beam deposition technique at 6 kV bias, to investigate an influence of barrier layer structure on texture and microstructure of Cu films. After deposition, films were annealed under vacuum. Texture of the films was studied by X-ray diffraction and further microstructural analysis of the copper films was performed by orientation imaging microscopy. Results of the structural analysis reveal large (100) grains in films deposited on α-C:H barrier layer and a bi-modal texture in films on Ta3N5.

Effect of barrier layers on the texture and microstructure of Copper films

2003 ◽  
Vol 766 ◽  
Author(s):  
Tejodher Muppidi ◽  
David P Field
Keyword(s):  
Barrier Layer ◽  
Copper Film ◽  
Copper Films ◽  
Microstructure Development ◽  
Deposition Technique ◽  
Barrier Layers ◽  
Barrier Films ◽  
Final Microstructure ◽  
Layer Stacking ◽  
Interconnect Material

AbstractThe microstructure of interconnect material is know to influence its electromigration and stress-voiding properties. In addition to many factors responsible for the microstructure development, the barrier layer could be a major contributing factor as it forms the substrate for the copper films above. The microstructure of the barrier films based on its deposition technique could determine the final microstructure of the copper film. In the present work we examine the effect of two different barrier layers (Ta and TaN) and different stackings of these two materials on the microstructure on the copper seed (PVD) and electroplated films using EBSD, AFM and XRD. The results show that the plated films have a predominantly (111) texture and uniform grain size. But the (111) texture maximum varied with the barrier layer stacking underneath the plated film.

scholarly journals Residual Stress and Microstructure of Electroplated Cu Film on Different Barrier Layers

2001 ◽  
Vol 695 ◽  
Author(s):  
Alex A. Volinsky ◽  
Meike Hauschildt ◽  
Joseph B. Vella ◽  
N.V. Edwards ◽  
Rich Gregory ◽  
...  
Keyword(s):  
Residual Stress ◽  
High Vacuum ◽  
Temperature Cycling ◽  
Copper Films ◽  
Stress Distributions ◽  
Cu Films ◽  
Barrier Layers ◽  
Cu Film ◽  
Processing Step ◽  
Stress Mapping

ABSTRACTCopper films of different thicknesses between 0.2 and 2 microns were electroplated on adhesion-promoting TiW and Ta barrier layers on <100> single crystal 6-inch silicon wafers. The residual stress was measured after each processing step using a wafer curvature technique employing Stoney's equation. Large gradients in the stress distributions were found across each wafer. Controlled Cu grain growth was achieved by annealing films at 350 C for 3 minutes in high vacuum. Annealing increased the average tensile residual stress by about 200 MPa for all the films, which is in agreement with stress-temperature cycling measurements.After aging for 1 year wafer stress mapping showed that the stress gradients in the copper films were alleviated. No stress discrepancies between the copper on Ta and TiW barrier layers could be found. However, X-ray pole figure analysis showed broad and shifted (111) texture in films on a TiW underlayer, whereas the (111) texture in Cu films on Ta is sharp and centered.

The Effects of Processing on the Microstructure of Copper Thin Films on Tantalum Barrier Layers

1995 ◽  
Vol 391 ◽  
Author(s):  
E.M. Zielinski ◽  
R.P. Vinci ◽  
J.C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Barrier Layer ◽  
Crystallographic Orientation ◽  
Deposition Temperature ◽  
Volume Fraction ◽  
Fiber Texture ◽  
Cu Films ◽  
Barrier Layers ◽  
Two Temperatures

abstractPreferred crystallographic orientation and grain size distribution were characterized as a function of processing for sputtered Cu films on Ta underlayers. The Ta barrier layer was deposited at two temperatures, 30 and 100 °C. Cu was deposited at 30, 150 and 250 °C on the 30 °C Ta, and at 100, 150, 200 and 250 °C on the 100 °C Ta. In the first set of samples, with increasing deposition temperature, the Cu (111) fiber texture grew weaker and the volume fraction of randomly oriented grains increased from 0.23 to 0.74. In contrast, for the films deposited on the 100 °C Ta, with increasing deposition temperature, Cu (111) fiber texture strengthened and the fractions of randomly oriented and twinned grains decreased. Grain size was lognormally distributed in all samples and varied approximately parabolically with deposition temperature. At a given deposition temperature, median grain size in the Cu was larger in the films deposited on the 100 °C Ta. These results will be related to the microstructure of the Ta underlayers. Cu microstructure on the 100 °C Ta is shown to be influenced by textural inheritance from the Ta underlayer. Microstructure of the Cu on 30 °C Ta is discussed in terms of trace contaminants.

Texture Analysis of Al and Cu Metallization Materials Using Orientation Imaging Microscopy

1998 ◽  
Vol 523 ◽  
Author(s):  
D. T. Carpenter ◽  
R. Alvis ◽  
G. Morales
Keyword(s):  
Orientation Imaging Microscopy ◽  
Quantitative Agreement ◽  
Complete Analysis ◽  
Similar Data ◽  
X Ray Diffraction ◽  
Cu Films ◽  
Cu Metallization ◽  
Orientation Imaging ◽  
Efficient Data ◽  
Electron Microscope Analysis

AbstractX-ray diffraction (XRD) is generally used to measure crystallographic texture, but complete analysis is rarely performed. Orientation imaging microscopy (OIM) gives similar data by electron diffraction and has potential for widespread use since it may be added to any scanning electron microscope. Analysis software has been developed to reduce QIM results into a form which may be compared directly to XRD results. OIM texture parameters measured from Al films showed good quantitative agreement with XRD parameters, however the texture in Cu films is more complex and difficult to compare. Although subject to certain limitations, OIM has several advantages over XRD including more efficient data collection, better sensitivity to minor texture components, and more flexible data analysis.

Influence of Dynamic Recrystallisation on Texture Formation in ECAP deformed Nickel

2007 ◽  
Vol 558-559 ◽  
pp. 575-580 ◽  
Author(s):  
Werner Skrotzki ◽  
Burghardt Klöden ◽  
I. Hünsche ◽  
Robert Chulist ◽  
Satyam Suwas ◽  
...  
Keyword(s):  
Orientation Imaging Microscopy ◽  
High Energy ◽  
Texture Gradient ◽  
Texture Formation ◽  
Microstructure Formation ◽  
Fcc Metals ◽  
Orientation Imaging ◽  
Angular Pressing ◽  
Dynamic Recrystallisation ◽  
Number Of Passes

3N nickel has been deformed by equal channel angular pressing (ECAP) at 400°C up to 3 passes using route A. The texture with respect to position in the deformed billet, i.e. from top to bottom, has been measured with high-energy synchrotron radiation. It is characterized by texture components typical for simple shear in the intersection plane of the square-shaped 90° bent channel. Besides, an oblique cube component is observed. Orientation imaging microscopy clearly shows that this component is due to partial recrystallization. Intensities of the texture components as well as deviations from their ideal shear positions vary from the top to the bottom of the billet and with the number of passes. The change of the intensity of texture components and the texture gradient investigated is discussed. Special emphasis is put on the influence of dynamic recrystallization on texture and microstructure formation during ECAP of fcc metals.

Ultra Grain Refinement of Low C Steels by Accumulative Roll Bonding

2006 ◽  
Vol 503-504 ◽  
pp. 311-316 ◽  
Author(s):  
I. Salvatori
Keyword(s):  
Accumulative Roll Bonding ◽  
Orientation Imaging Microscopy ◽  
Low Carbon Steel ◽  
Small Samples ◽  
Low Carbon ◽  
High Angle ◽  
Misorientation Distribution ◽  
Roll Bonding ◽  
Orientation Imaging ◽  
Annealing Conditions

Refinement of grain size is one of the biggest challenges to produce steels with improved combination of strength and toughness. Ultrafine structures are being produced world-wide on various materials, including low carbon steel, using different types of processes. However, the majority of these processes also exhibit severe limitations because they are generally restricted to small samples and are difficult to be implemented on an industrial scale. A promising technique for industrial implementation is the Accumulative Roll Bonding (ARB), a process able to supply large samples, even in the laboratory scale. In this paper, warm intense straining (ε = 4) by ARB was applied to a plain low-C steel in order to develop ultrafine grains, aiming at sizes around 1-2 μm, suitable to maintain an adequate combination of strength and ductility. The effect of annealing conditions on the evolution of the work-hardened microstructure and the bonding behaviour after each pass were investigated. Orientation Imaging Microscopy was used to investigate the microstructure and give a quantitative assessment of high angle and low angle boundaries. It is showed that the frequency of high angle grain boundaries increases with the strain but the misorientation distribution remained far from that typical of a recrystallised material.

Structure Development during ECAP and Subsequent Creep of Aluminium

2007 ◽  
Vol 539-543 ◽  
pp. 493-498 ◽  
Author(s):  
Ivan Saxl ◽  
Vàclav Sklenička ◽  
L. Ilucová ◽  
Milan Svoboda ◽  
Petr Král
Keyword(s):  
High Purity ◽  
Grain Orientation ◽  
Orientation Imaging Microscopy ◽  
Structural Inhomogeneity ◽  
Structure Development ◽  
Creep Fracture ◽  
Orientation Imaging ◽  
Purity Aluminium ◽  
High Purity Aluminium ◽  
Creep Loading

Considerable structural inhomogeneity and anisotropy were found even after eight ECAP passes in high purity aluminium and the creep loading of ECAP material at 473K, 15MPa resulted in scattered fracture times ~ 20-60 hours. The structure revealed by orientation imaging microscopy with different disclination bounds was analysed by stereological methods. The effect of inhomogeneity and grain orientation on the creep fracture time was assessed.

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