Time-Resolved and Post-Irradiation Studies of the Interaction of High-Power Pulsed Microwave Radiation with Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
R. B. James ◽  
P. R. Bolton ◽  
R. A. Alvarez ◽  
R. E. Valiga ◽  
W. H. Christie
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Surface Region ◽  
Surface Damage ◽  
Threshold Value ◽  
Optical Measurements ◽  
Time Resolved ◽  
Near Surface ◽  
Reflected Power ◽  
Secondary Ion

AbstractWe have measured the microwave-induced damage to the near-surface region of silicon for 1.9-μs pulses at a frequency of 2.856 GHz and a pulse power of up to 7.2 MW. Rectangular samples were irradiated in a test section of WR-284 waveguide that was filled with freon to a pressure of 30 psig. Incident, transmitted and reflected powers were monitored with directional couplers and fast diodes. The results of the time-resolved optical measurements show that the onset of surface damage is accompanied by a large increase in the reflected power. Examination of the irradiated surfaces shows that the degree of damage is greatest near the edges of the samples. Using secondary ion mass spectrometry to profile the implanted As, we find that the microwave pulses can melt the near-surface region of the material for pulse powers exceeding a threshold value.

Pulsed Microwave Irradiation of Graphite/Epoxy Composites

1988 ◽  
Vol 124 ◽  
Author(s):  
R. B. James ◽  
P. R. Bolton ◽  
R. A. Alvarez
Keyword(s):  
Light Emission ◽  
Electrical Breakdown ◽  
Surface Region ◽  
Surface Damage ◽  
Sample Surface ◽  
Optical Measurements ◽  
Time Resolved ◽  
Near Surface ◽  
Reflected Power ◽  
Surface Decomposition

ABSTRACTWe have measured the microwave-induced damage to the near-surface region of a graphite/epoxy composite material for 1.1-μs pulses at a frequency of 2.856 GHz and a pulse power of up to 8 MW. Rectangular samples were irradiated by single-pass TE10 traveling wave pulses inside a WR-284 waveguide, and in situ and post irradiation studies were performed to characterize the material modifications induced by the microwave pulses. The results of the time-resolved optical measurements in vacuo show that surface decomposition of the epoxy resin occurs for incident pulse powers exceeding 1.1 MW, and that the surface damage is accompanied by a large increase in the reflected microwave power. Simultaneous with the onset of surface decomposition, significant light emission from the sample and a large enhancement of the gas pressure in the test cell were observed. The large increments in both the reflected power and light emission are attributed to the formation of a plasma due to electrical breakdown of the gas at (or near) the sample surface.

Rapid Heating of Ion-Implanted Silicon by High-Power Pulsed Microwave Radiation

1988 ◽  
Vol 124 ◽  
Author(s):  
R. B. James ◽  
P. R. Bolton ◽  
R. A. Alvarez ◽  
W. H. Christie
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Light Emission ◽  
Electrical Breakdown ◽  
Rapid Heating ◽  
Surface Region ◽  
Time Resolved ◽  
Near Surface ◽  
Microwave Induced Plasma ◽  
Spatially Homogeneous ◽  
Secondary Ion

ABSTRACTWe have used 1.1-μs microwave pulses at a frequency of 2.856 GHz to rapidly heat the near-surface region of arsenic-implanted silicon. The samples were irradiated inside a WR-284 waveguide by single-pass TE10 traveling wave pulses. Post-irradiation studies show that surface melting occurs for incident pulse powers exceeding about 3 MW. Time-resolved measurements of the microwave reflectivity (R) show that there is an abrupt and large increase in R for microwave pulse powers greater than the melt threshold. Significant light emission was also observed from the test cell, which is most likely due to the relaxation of a microwave-induced plasma formed by electrical breakdown of gas. Using secondary ion mass spectrometry, we measured the depth profile of the implanted arsenic and found that the penetration of the melt front in the near-surface region is not spatially homogeneous over the silicon surface.

Surface Analysis Of Lcd Materials iN Various Stages of Production by Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS)

1994 ◽  
Vol 345 ◽  
Author(s):  
J.J. Lee ◽  
P.M. Lindley ◽  
R.W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Surface Analysis ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Surface Region ◽  
Near Surface ◽  
Tof Sims ◽  
Analysis Technique ◽  
Spectrometry Technique ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a surface analysis technique which provides a sensitive characterization of the elemental and molecular composition of the near-surface region (top few monolayers) of solid materials1. This mass spectrometry technique can also localize the distribution of specific elements, molecules or molecular fragments at submicrometer (µm) lateral resolutions.2

Deposition of Low-Stress Encapsulants on InP and GaAs

1986 ◽  
Vol 75 ◽  
Author(s):  
U. K. Chakrabarti ◽  
S. J. Pearton ◽  
H. Barz ◽  
A. R. Vonneida ◽  
K. T. Short ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Surface Region ◽  
Near Surface ◽  
Deposition Parameters ◽  
Direct Measurements ◽  
Dopant Redistribution ◽  
Doped Glass ◽  
Phosphorus Doped ◽  
Secondary Ion

AbstractAℓN deposited by D.C. triode sputtering and spin-on, phosphorus-doped glass (PSG) layers on GaAs and InP were investigated as encapsulants. These films have similar expansion coefficients to both GaAs and InP, minimizing the amount of strain induced in the near-surface region of the underlying wafer. We have quantified this effect by direct measurements of the stress in the films and by using secondary ion mass spectrometry profiling to measure the redistribution of Cr and Fe in encapsulated GaAs and InP respectively during high temperature processing. The dopant redistribution is considerably less for the AℓN and PSG films compared to the more conventional SiO2 and Si3N4 layers. The interaction of the films with the substrate at elevated temperatures is minimal as determined by Auger profiling and the electrical properties of the surface after removal of the encapsulants. The composition of the films remains essentially constant after annealing, as measured by Rutherford backscattering, and the thickness uniformity over large wafer diameters (2″) can be excellent with close control of the deposition parameters. The activation characteristics of low dose, Si-implanted layers in GaAs using either PSG or AℓN are comparable to those obtained using capless annealing or SiO2 or Si3N4 encapsulation.

Correction Method for Ion Yield Transients in the Near Surface Region of Sims Depth Profiles

1985 ◽  
Vol 54 ◽  
Author(s):  
S. R. Bryan ◽  
R. W. Linton ◽  
D. P. Griffis
Keyword(s):  
Steady State ◽  
Secondary Ion Mass Spectrometry ◽  
High Sensitivity ◽  
Depth Resolution ◽  
Surface Region ◽  
Correction Method ◽  
Ion Concentration ◽  
Near Surface ◽  
Ion Yields ◽  
Secondary Ion

As solid state device features continue to decrease in size, it has become more important to characterize dopant concentrations within the first several hundred angstroms of the surface. Secondary ion mass spectrometry (SIMS) is the technique of choice for dopant depth profiling due to its high sensitivity and good depth resolution. In order to increase the sensitivity of SIMS, electropositive elements (e.g. oxygen) or electronegative elements (e.g. cesium) are used as primary ion species to enhance positive or negative secondary ion yields, respectively. This has the disadvantage, however, of causing secondary ion yields to vary by up to several orders of magnitude over the first few hundred angstroms of a depth profile as the implanted primary ion concentration increases [1,2]. Secondary ion yields stabilize once the primary ion reaches a steady state concentration, which occurs at a depth proportional to the range of the primary ions in the solid. This ion yield transient artifact hinders quantification of dopant concentrations until the primary ion concentration reaches steady state.

scholarly journals Формирование преципитатов в Si, имплантированном ионами -=SUP=-64-=/SUP=-Zn-=SUP=-+-=/SUP=- и -=SUP=-16-=/SUP=-O-=SUP=-+-=/SUP=-

2018 ◽  
Vol 52 (8) ◽  
pp. 827
Author(s):  
В.В. Привезенцев ◽  
Е.П. Kириленко ◽  
А.В. Горячев ◽  
А.В. Лютцау
Keyword(s):  
Mass Spectrometry ◽  
Surface Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Secondary Ion ◽  
Post Implantation ◽  
Scanning Electron

AbstractThe results of studying the surface Si layer and precipitate formation in CZ n -Si(100) samples sequentially implanted with ^64Zn^+ ions with a dose of 5 × 10^16 cm^2 and energy of 100 keV and ^16O^+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R _ p = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

Molecular Surface Imaging of Particles Using Microprobe Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

1996 ◽  
Vol 54 ◽  
pp. 1046-1047
Author(s):  
R.W. Linton ◽  
T.F. Fister ◽  
S.S. Summers ◽  
G.S. Strossman ◽  
M.J. Holland ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Surface Damage ◽  
Molecular Surface ◽  
Photochemical Degradation ◽  
Single Particles ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

The objective of this research is to develop imaging time-of-flight secondary ion mass spectrometry (TOF-SIMS) to characterize ultra-thin organic films on microscopic particles. An initial application is to evaluate the surface chemistry of polycyclic organic matter (POM) on combustion-generated particles as an area of fundamental interest in the assessment of the environmental fate and impact of carcinogenic pollutants.Controlled deposition of POM monolayers was achieved using either gas or solution phase coating on model particles such as silica, as well as on authentic environmental particles such as coal flyash or soot. Another aspect of the work was to monitor surface transformations of adsorbed POM involving photochemical degradation or reactions with gaseous pollutants such as nitrogen oxides. For the first time, variations in POM adsorption and reactivity have been probed as a function of particle type by the use of time-of-flight secondary ion mass spectrometry (TOF-SIMS) to perform surface analysis on single particles. Results using a pulsed gallium microbeam source on a TOF-SIMS indicated that 0.1 monolayer coverages of individual POM species can be detected as quasimolecular ions from single particles with diameters typically in the 5 μm range. Primary ion doses were <1013 ions/cm2 to minimize surface damage during a typical 10 min spectrum acquisition from an 40x40 ftm image field. Correlation of in situ measurements using TOF-SIMS with traditional solvent extraction and chromatographic results, including LC or GC-MS, allowed for more detailed assessments of the sensitivity and quantitative capabilities of TOF-SIMS. The combination of monolayer analysis with microanalysis creates severe challenges to sensitivity since the total number of molecules within the analytical volume is so small (< 107 POM molecules on a lμm2 particle area)

Backside Sims Study Of Ge/Pd Non-Alloyed Ohmic Contacts On InGaAs

1994 ◽  
Vol 354 ◽  
Author(s):  
S.A. Schwarz ◽  
C.J. Pahnstrom ◽  
R. Bhat ◽  
M. Koza ◽  
L.C. Wang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Secondary Ion Mass Spectrometry ◽  
Layer Structure ◽  
Depth Profiling ◽  
Surface Region ◽  
Marker Layer ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

AbstractBackside secondary ion mass spectrometry (SIMS) is employed to examine the Ge/Pd non-alloyed ohmic contact on InGaAs. 130 nm Ge/ 50 nm Pd contacts were deposited on an InP/InGaAs marker layer structure. The contacts were annealed for various times at 200°C and 325°C. Samples were mechanically and chemically thinned to facilitate sputter profiling from the backside, thereby avoiding problems such as roughening or non-uniformity of the metallic layers. Subsequent to depth profiling, additional anneals were performed on the thinned samples, and the samples were reexamined. Extensive reaction of Pd with InGaAs is observed on deposition. Little additional reaction occurs at 200°C. At 325°C, Pd is reclaimed from the reacted surface region, forming PdGe with some excess Ge at the interface. In-diffiision of Pd and Ge into InGaAs is observed at longer annealing times. The results are contrasted with prior studies on GaAs, InP, and InGaAs.

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