Laser Interactions with Optical Recording Materials

1986 ◽  
Vol 74 ◽  
Author(s):  
Ernesto E. Marinero
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Magnetic Domain ◽  
Optical Recording ◽  
Single Element ◽  
Material Research ◽  
Tem Analysis ◽  
Kerr Rotation ◽  
Time Resolved ◽  
Laser Interactions

AbstractLaser-material interactions are pivotal to optical storage technology. Laser quenching and thermomagnetic processes form the memory basis for approaches based on “phase-change” materials and magneto-optical alloys respectively. Recent progress in phase-change materials indicates that compound semiconductors as well as single element materials are characterized by fast crystallization times. In this work we review, utilizing time-resolved optical and conductivity probes, the melt-kinetics and glass formation processes in Te thin films and the laser-induced crystallization of amorphous GeTe. The latter studies are complemented by x-ray diffraction and TEM analysis. Results are also presented on time-resolved Kerr rotation studies to investigate the magnetic domain formation kinetics in thermo-magnetic recording. Material research problems facing laser interactions with optical recording materials will be discussed.

Thermal Characterization of Dielectric and Phase Change Materials for the Optical Recording Applications

2005 ◽  
Author(s):  
Y. Yang ◽  
Chun-Teh Li ◽  
S. M. Sadeghipour ◽  
M. Asheghi ◽  
H. Dieker ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Thermal Characterization ◽  
Technical Conference ◽  
Boundary Resistance ◽  
Optical Recording ◽  
Electronic Systems ◽  
Recording Technology ◽  
Sio2 Phase

Advances in the phase change optical recording technology strongly depend on the optical and thermal optimizations of the metal/ZnS-SiO2/phase change multilayer structure, which requires accurate modeling and thermal characterization of PC media structure. In the present work, the thermal conductivities of the amorphous and crystalline Ge4Sb1Te5 (GST) phase change; and ZnS-SiO2 dielectric layers of thickness in the range of 50 nm to 300 nm have been measured using the transient thermoreflectance technique. The data are between a factor of 2–4 different from the previously measured values for thin film and bulk samples. The thermal boundary resistance at metal/ZnS-SiO2 interface is found to be around 7×10−8 m2W−1. This might have serious implications for the future phase change recording application which attempts to achieve the high writing speeds by decreasing the thickness of ZnS-SiO2 dielectric layer.   This paper was also originally published as part of the Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems.

Crystallization Characteristics of Ge-Sb Phase Change Materials

2009 ◽  
Vol 1160 ◽  
Author(s):  
Simone Raoux ◽  
Cyril Cabral ◽  
Lia Krusin-Elbaum ◽  
Jean L. Jordan-Sweet ◽  
Martin Salinga ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Mass Density ◽  
Large Change ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Time Resolved ◽  
X Ray ◽  
Diffraction Peaks ◽  
Low X

AbstractThe crystallization behavior of Ge-Sb phase change materials with variable Ge:Sb ratio X between 0.079 and 4.3 was studied using time-resolved x-ray diffraction, differential scanning calorimetry, x-ray reflectivity, optical reflectivity and resistivity vs. temperature measurements. It was found that the crystallization temperature increases with Ge content from about 130 °C for X = 0.079 to about 450 °C for X = 4.3. For low X, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. For X = 1.44 and higher, Sb and Ge peaks occurred at the same temperature. Mass density change upon crystallization and optical and electrical contrast between the phases show a maximum for the eutectic alloy with X = 0.17. The large change in materials properties with composition allows tailoring of the crystallization properties for specific application requirements.

Phase-Change Media for High-Density Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Herman Borg ◽  
Martijn Lankhorst ◽  
Erwin Meinders ◽  
Wouter Leibbrandt
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Laser Heating ◽  
Phase Change Materials ◽  
Optical Storage ◽  
Sputter Deposition ◽  
Optical Recording ◽  
Thermal Design ◽  
Recording Media ◽  
Audio Video

ABSTRACTRewritable optical-storage systems are quickly gaining market share in audio, video and data- storage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.

Thermal characterization of dielectric and phase change materials for the optical recording applications

2006 ◽  
Vol 100 (2) ◽  
pp. 024102 ◽  
Author(s):  
Y. Yang ◽  
C.-T. Li ◽  
S. M. Sadeghipour ◽  
H. Dieker ◽  
M. Wuttig ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Thermal Characterization ◽  
Optical Recording

Time-Resolved Investigation of Nanosecond Crystal Growth in Rapid-Phase-Change Materials: Correlation with the Recording Speed of Digital Versatile Disc Media

2008 ◽  
Vol 1 ◽  
pp. 045001 ◽  
Author(s):  
Yoshimitsu Fukuyama ◽  
Nobuhiro Yasuda ◽  
Jungeun Kim ◽  
Haruno Murayama ◽  
Yoshihito Tanaka ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Phase Change ◽  
Phase Change Materials ◽  
Rapid Phase ◽  
Time Resolved ◽  
Digital Versatile Disc

Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction

2009 ◽  
Vol 95 (14) ◽  
pp. 143118 ◽  
Author(s):  
Simone Raoux ◽  
Becky Muñoz ◽  
Huai-Yu Cheng ◽  
Jean L. Jordan-Sweet
Keyword(s):  
Phase Transitions ◽  
Phase Change ◽  
Phase Change Materials ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray

Thickness-dependent Crystallization Behavior of Phase Change Materials

2008 ◽  
Vol 1072 ◽  
Author(s):  
Simone Raoux ◽  
Jean L. Jordan-Sweet ◽  
Andrew J. Kellock
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Phase Change Materials ◽  
Random Access ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Future Technology ◽  
Technology Nodes

ABSTRACTWe have investigated the crystallization behavior of phase change materials as a function of their thickness. Thin films of variable thickness between 1 and 50nm of the phase change materials Ge2Sb2Te5 (GST), N-doped GST (N-GST), Ge15Sb85 (GeSb), Sb2Te, and Ag and In doped Sb2Te (AIST) were deposited by magnetron sputtering, and capped in situ by a 10nm thick Al2O3 film to prevent oxidation. The crystallization behavior of the films was studied using time-resolved X-ray diffraction. For each material we observed a constant crystallization temperature Tx that was comparable to bulk values for films thicker than 10 nm, and an increased Tx when the film thickness was reduced below 10 nm. The thinnest films that showed XRD peaks were 2 nm for GST and N-GST, 1.5 nm for Sb2Te and AgIn-Sb2Te, and 1.3 nm for GeSb. The observed increase in the phase transition temperature with reduced film thickness and the fact that very thin films still show clear phase change properties are indications that Phase Change Random Access Memory technology can be scaled down to several future technology nodes.

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