Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
2009 ◽
Vol 615-617
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pp. 93-96
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Keyword(s):
Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.
2011 ◽
Vol 679-680
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pp. 59-62
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2006 ◽
Vol 527-529
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pp. 219-222
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2012 ◽
Vol 717-720
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pp. 157-160
2012 ◽
Vol 717-720
◽
pp. 105-108
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2009 ◽
Vol 615-617
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pp. 113-116
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Keyword(s):
2010 ◽
Vol 645-648
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pp. 99-102
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Keyword(s):
2013 ◽
Vol 740-742
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pp. 205-208
Keyword(s):