Spectroscopic Properties of Cubic SiC on Si

2002 ◽  
Vol 742 ◽  
Author(s):  
Z. C. Feng ◽  
D. N. Talwar ◽  
I. Ferguson

ABSTRACTSpectroscopic studies are reported for cubic SiC grown on Si by chemical vapour deposition (CVD) manufacture technique. The UV excitation room temperature photoluminescence (PL)-Raman spectra exhibited 2.3 eV luminescence line due to RT recombination over the SiC indirect band gap. In addition to the optical phonons from cubic SiC we observed new Raman modes near 620 and 833 cm-1. A comprehensive analysis of the dynamical properties of defects using Green's function theory has suggested isolated impurity vibrations to be the possible origin for the additional phonons observed by Raman spectroscopy.

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.


Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 285 ◽  
Author(s):  
M. Kowalczyk ◽  
T.F. Ramazanova ◽  
V.D. Grigoryeva ◽  
V.N. Shlegel ◽  
M. Kaczkan ◽  
...  

The spectroscopic properties of Eu3+ doped Bi12GeO20 (BGO) sillenite bulk crystals that were grown by the low-thermal-gradient Czochralski technique (LTG Cz) were investigated. The absorption spectra and the emission properties have been measured at room temperature (300 K) and at 10 K. Luminescence was observed both due to the direct Eu3+ ion excitation, as well as under UV excitation due to the energy transfer between Bi3+ and Eu3+ ions. Bi3+ → Eu3+ energy transfer mechanisms in Eu3+:BGO doped host were investigated. The Ωλ parameters, as well as radiative lifetimes, were calculated based upon the Judd-Ofelt formalism. The branching ratios and electric dipole transition probabilities were also determined, based upon the obtained experimental results. Luminescence has been observed from the 5D0,1,2 levels of Eu3+, with emissions from the 5D0 level being the strongest. The strongest observed luminescence band corresponds to the 5D0 → 7F0 transition at 578.7 nm. Reasons for the strong presence of the theoretically forbidden 5D0 → 7F0 emission were investigated.


2007 ◽  
Vol 24 (7) ◽  
pp. 2085-2087 ◽  
Author(s):  
Lin Ying-Bin ◽  
Lu Zhi-Hai ◽  
Zou Wen-Qin ◽  
Lu Zhong-Lin ◽  
Xu Jian-Ping ◽  
...  

1989 ◽  
Vol 162 ◽  
Author(s):  
Yusuke Mori ◽  
Hiroshi Kawarada ◽  
Akio Hiraki

ABSTRACTElectric properties of the interface between metal and semiconducting CVD diamond formed by microwave plasma chemical vapour deposition (CVD) have been investigated. Much better rectifying property due to Schottky barrier has been obtained in the films formed with CO(5%)/H2 compared with CH4(0.5%)/H2. A high breakdown voltage (200 V) and a high rectification ratio (105) have been observed at the evaporated Al/diamond interfaces formed with CO(5%)/H2. In the point contact interfaces, where the metal-carbon reaction is not expected at room temperature, the rectifying and ohmic property depends on the electronegativity of metals.


The thermal conductivity of chemical vapour deposition diamond films is controlled by the microstructure, impurity content and carbon double bonds in the films. In high conductivity films, dislocation scattering is dominant at low temperatures, while phonon-phonon scattering limits the conductivity at room temperature. In lower quality films, hydrogen and metal impurities as well as carbon double bonds constrain the conductivity up to room temperature. Significant anisotropies and gradients in the thermal conductivity exist in some films because of their micro structure.


Sign in / Sign up

Export Citation Format

Share Document