Texture and Nano Mechanical Properties of YSZ Electrolyte Thin Films Prepared by CCVD and PLD

2003 ◽  
Vol 778 ◽  
Author(s):  
Z. Xu ◽  
C. Waters ◽  
X. Wang ◽  
N. Sudhir ◽  
S. Yarmolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Surface Roughness ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Advanced Materials ◽  
State University ◽  
Composite Thin Films ◽  
Ysz Electrolyte ◽  
T State

AbstractComposite thin films of yttria stabilized zirconia (YSZ) and alumina (Al2O3) have been synthesized using liquid fuel combustion chemical vapor deposition (CCVD) and pulsed laser deposition (PLD) in the NSF Center for Advanced Materials and Smart Structures (CAMSS) at North Carolina A&T State University. With the CCVD technique, addition of alumina was realized by adding the designated amount of aluminum-organic in the reagent solution; while with PLD, doping of alumina in YSZ was accomplished by alternative ablations of an YSZ target and an alumina target. Variations in morphology, surface roughness and nano-mechanical properties of the composite thin films of Al2O3/YSZ were characterized. Crystal size of the films processed by CCVD was much larger than that processed by PLD; surface roughness follows the similar tendency. Upon high-temperature annealing, crystals in the PLD processed thin films grew up to 300 nm. The effect of Al2O3 in YSZ thin films on their nano-mechanical properties was dependent on the film deposition techniques in our research. For the films deposited by CCVD, addition of Al2O3 improved the nano hardness and elastic modulus of YSZ thin films, while a decline was observed in the mechanical properties of the films deposited by PLD.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Probing the Effects of Nanoscale Architecture on the Mechanical Properties of Hexagonal Silica/Polymer Composite Thin Films

2005 ◽  
Vol 15 (8) ◽  
pp. 1319-1327 ◽  
Author(s):  
B. L. Kirsch ◽  
X. Chen ◽  
E. K. Richman ◽  
V. Gupta ◽  
S. H. Tolbert
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Polymer Composite ◽  
Composite Thin Films

Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

2006 ◽  
Vol 321-323 ◽  
pp. 1336-1339
Author(s):  
Won Seok Choi ◽  
Young Park ◽  
Jin Hyo Boo ◽  
Junsin Yi ◽  
Byung You Hong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Ceramic Capacitor ◽  
Diffraction Patterns ◽  
Lower Temperature

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

Characterization of the mechanical properties of a–SiC: H films

1993 ◽  
Vol 8 (11) ◽  
pp. 2908-2915 ◽  
Author(s):  
M.J. Loboda ◽  
M.K. Ferber
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Properties ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Scratch Test ◽  
Film Structure ◽  
Process Conditions ◽  
Source Power ◽  
Simplified Approach

Amorphous hydrogenated silicon carbide (a–SiC: H) thin films (t < 1 μm) were grown from two different precursor gases, a methane/silane mixture and silacyclobutane (SiC3H8). Plasma enhanced chemical vapor deposition was used to deposit a–SiC: H thin films on silicon substrates at temperatures of 175 °C and 600 °C. These a–SiC: H films were characterized using the mechanical properties microprobe (nanoindenter) and by scratch testing. Data and mechanical properties information collected from these measurements have been correlated with film process conditions and materials characteristics. A simplified approach was used to calculate the average nanoindentation hardness from shallow indentations. Using this technique, results for a silicon wafer are in good agreement with that previously reported. Analysis of the substrate influence on the thin film nanoindentation data implies that the measured hardness is relatively unaffected by the substrate, while the measured elastic properties are somewhat influenced by the substrate. The a–SiC: H film hardness is shown to depend on the precursor gas and molecular bonding, while the elastic properties vary with precursor gas, composition, and density, as influenced by the plasma source deposition power. The MPM data and scratch test data show similar correlations to plasma source power, film structure, and film composition.

Nano-mechanical properties of nano-gold/DLC composite thin films

2014 ◽  
Vol 68 (2) ◽  
pp. 20402 ◽  
Author(s):  
Rajib Paul ◽  
Nilanjana Bhadra ◽  
Anup Kumar Mukhopadhyay ◽  
Radhaballav Bhar ◽  
Arun Kumar Pal
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Composite Thin Films ◽  
Nano Gold

scholarly journals An Integrated Cleanroom Process for the Vapor Phase Deposition of Large-Area Zeolitic Imidazolate Framework Thin Films

2019 ◽  
Author(s):  
Alexander John Cruz ◽  
Ivo Stassen ◽  
Mikhail Krishtab ◽  
Kristof Marcoen ◽  
Timothée Stassin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ex Situ ◽  
Test Case ◽  
Large Area ◽  
Zeolitic Imidazolate Framework ◽  
Deposition Parameters ◽  
The Impact

<p>Robust and scalable thin film deposition methods are key to realize the potential of metal-organic frameworks (MOFs) in electronic devices. Here, we report the first integration of the chemical vapor deposition (CVD) of MOF coatings in a custom reactor within a cleanroom setting. As a test case, the MOF-CVD conditions for ZIF-8 are optimized to enable smooth, pinhole-free, and uniform thin films on full 200 mm wafers under mild conditions. The single-chamber MOF-CVD process and the impact of the deposition parameters are elucidated <i>via</i> a combination of <i>in situ </i>monitoring and <i>ex situ</i> characterization. The resulting process guidelines will pave the way for new MOF-CVD formulations and a plethora of MOF-based devices.<br></p>

scholarly journals Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Surfaces ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 59-72 ◽  
Author(s):  
Zhenghao Gan ◽  
Changzheng Wang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Flow Rates ◽  
Silicon Nitride Films

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

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