Dielectric Tunability Properties and Thermal Stability of (Ba,Sr,Ca)TiO3 Thin Films Prepared by the Sol-Gel Method

ABSTRACTA new family of (Ba1-x-ySrxCay)TiO3 (BSCT) thin films was prepared on Pt(111)/TiO2/SiO2/Si substrates by using sol-gel techniques. BSCT thin films with Ba/Sr/Ca ratio of 15/55/30, 20/45/35 and 25/35/40 were investigated, which were selected at the cubic region in the vicinity of the cubic-tetragonal phase boundary according to the ternary phase diagram of BaTiO3-SrTiO3-CaTiO3. X-ray diffraction analysis indicates that BSCT thin films are of the cubic perovskite structure. No hysteresis window can be observed from the capacitance-voltage curves, reflecting that BSCT thin films are in the paraelectric phase. The dielectric constant and tunability of BSCT thin films were investigated in the temperature range of 200–370 K. The Curie temperature Tc increases with increasing Ba concentration.

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Comparative studies on BaZrxTi1-xO3 thin films deposited by Sol-gel and Pulse laser deposition

MRS Proceedings ◽

10.1557/proc-784-c8.18 ◽

2003 ◽

Vol 784 ◽

Author(s):

A. Dixit ◽

P. Bhattacharaya ◽

S. B. Majumder ◽

R. S. Katiyar ◽

A. S. Bhalla

Keyword(s):

Thin Films ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Sol Gel ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Capacitance Voltage

ABSTRACTFerroelectric thin films of BaZrxTi1-xO3 (BZT) were deposited on platinum (Pt) and platinized silicon (Pt/Si) substrates by sol-gel and pulse laser deposition technique respectively. The structure and preferred orientation of the films were examined by x-ray diffraction measurements. The phase formation of sol-gel derived BZT films were found to be at high temperature (1100°C) compare to the pulse laser deposited BZT films ∼ 700°C. Polycrystalline films were observed by both techniques. Ferroelectric nature of the films was confirmed by hysteresis and capacitance-voltage characteristics using platinum top electrodes. Dielectric constant as well as loss was found to decrease by increasing Zr contents. Surface morphology predicted smooth crack free surface.

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The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.891 ◽

2011 ◽

Vol 239-242 ◽

pp. 891-894 ◽

Cited By ~ 3

Author(s):

Tsung Fu Chien ◽

Jen Hwan Tsai ◽

Kai Huang Chen ◽

Chien Min Cheng ◽

Chia Lin Wu

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Morphological Characterization ◽

Experimental Result ◽

X Ray Diffraction ◽

Solution Deposition ◽

Capacitance Voltage ◽

Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

Modern Physics Letters B ◽

10.1142/s0217984901002506 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 769-773 ◽

Cited By ~ 2

Author(s):

M. GARCIA-ROCHA ◽

A. CONDE-GALLARDO ◽

I. HERNANDEZ-CALDERON ◽

R. PALOMINO-MERINO

Keyword(s):

Thin Films ◽

Sol Gel ◽

Luminescent Properties ◽

X Ray Diffraction ◽

Si Substrates ◽

Glass Substrates ◽

Corning Glass ◽

Different Temperatures ◽

Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

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Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

MRS Proceedings ◽

10.1557/proc-1199-f03-26 ◽

2009 ◽

Vol 1199 ◽

Author(s):

Danilo G Barrionuevo ◽

Surinder P Singh ◽

Maharaj S. Tomar

Keyword(s):

Thin Films ◽

Room Temperature ◽

Magnetic Measurements ◽

Sol Gel ◽

Ion Concentration ◽

Ferromagnetic Phase ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

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Thermal Stability of Amorphous Ni-Nb Thin Films for Use as Diffusion Barriers

MRS Proceedings ◽

10.1557/proc-108-47 ◽

1987 ◽

Vol 108 ◽

Author(s):

S. N. Farrens ◽

J. H. Perepezko ◽

B. L. Doyle ◽

S. R. Lee

Keyword(s):

Thin Films ◽

Thermal Stability ◽

X Ray Diffraction ◽

Free Standing ◽

X Ray ◽

Amorphous Thin Films ◽

Si Substrates ◽

Sputter Deposited ◽

Film Substrate ◽

Thermal Stability Of

ABSTRACTThe interdiffusion and crystallization reactions between amorphous Ni-Nb alloy films and Si substrates and several overlayer metals have been monitored by x-ray diffraction and high resolution Rutherford backscattering spectroscopy. Free standing amorphous thin films of Ni-Nb alloys crystallize in one hour at temperatures between 600–625 °C and show little dependence of the crystallization temperature, Tx, on composition over the range from 30–80 at.% Ni. However, in films that are sputter deposited onto Si substrates Tx tends to increase with increasing Nb composition. Ni60Nb40 samples without overlayers crystallize at 650–700 °C. Enhancement of the thermal stability to 700–750 °C is achieved with a Nb overlayer. In contrast, a Ni overlayer can reduce Tx to 450 °C. At the film/substrate interface silicide formation reactions with Ni from the film contribute to a destabilization of the amorphous alloy. The modification of Tx with Ni, Nb, and other overlayers appears to be related to changes in the reaction kinetics associated with penetration of the overlayer into the film.

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Raman spectroscopy and X-ray diffraction study of sol–gel derived (Pb1−xLax)Ti1−x/4O3 thin films on Si substrates

Thin Solid Films ◽

10.1016/s0040-6090(97)01011-0 ◽

1998 ◽

Vol 322 (1-2) ◽

pp. 323-328 ◽

Cited By ~ 9

Author(s):

Di Wu ◽

Ai-dong Li ◽

Chuan-Zhen Ge ◽

Peng Lü ◽

Chun-Yi Xu ◽

...

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Diffraction Study ◽

Sol Gel ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates

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Electrostatic coupling driven dielectric enhancement of PZT/BTO multilayer thin films

10.21203/rs.3.rs-267404/v1 ◽

2021 ◽

Author(s):

Huang Zhong ◽

Xin Wang ◽

Xin Hong Li ◽

Zhen Ya Lu ◽

Zhi Wu Chen

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Sol Gel ◽

Internal Field ◽

Multilayer Thin Films ◽

X Ray Diffraction ◽

Si Substrates ◽

Sol Gel Process ◽

Dielectric Enhancement ◽

Electrostatic Coupling

Abstract In this study, PbZr0.52Ti0.48O3/BaTiO3 (PZT/BTO) multilayers with varying layer fractions were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process. The films were characterized by X-ray diffraction and scanning electron microscopy (SEM). The result shows that there exists a dielectric enhancement when the BTO layer fraction x is around 0.5, and at this fraction, the dielectric constant of PZT/BTO is 590 at 100 kHz, which is far more than that of monolithic PZT or BTO films (478 and 284, respectively). The thermodynamic analysis shows that the measured dielectric constant is close to the simulation values when x closes to 0.5, otherwise it better consists with the series connection calculation values. The result indicates that the internal field resulting from the polarization mismatch between two ferroelectric layers contributes to the enhancement of PZT/BTO heterogeneous thin films.

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Optical and dielectric properties of polycrystalline gallium ferrite thin films on Pt/Si substrates

10.21203/rs.3.rs-123801/v1 ◽

2020 ◽

Author(s):

Monali Mishra ◽

Smrutirekha Swain ◽

Sukalyan Dash ◽

Somdutta Mukherjee

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Sol Gel ◽

Visible Region ◽

Charge Carrier Concentration ◽

Flat Band ◽

Optical And Electrical Properties ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates

Abstract In this work, GaFeO 3 thin films are deposited on Pt/Si substrates using sol-gel spin coating technique. The effect of these films on different properties such as: structural, optical and electrical properties are investigated. X- ray diffraction (XRD) confirms that GaFeO 3 has orthorhombic Pc2 1 n symmetry. Scanning electron microscopy reveals the uniform distribution of sol and crack free nature of the films. The optical absorption spectrum was recorded using DRS UV-Vis which showed the thin films are absorbed in the visible region. We have also performed experimentally which determines the flat band potential using Mott-Schottky equation. The width of the space charge region and charge carrier concentration of the thin films is also calculated. The dielectric properties of the thin films are also studied in this paper. This work opens up the possibility for the polycrystalline GaFeO 3 thin films to be used as phototelectrodes.

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Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr3+ Doped Pb(Mg1/3Nb2/3)O3-PbTiO3 Ferroelectric Nano-Films Grown on Si Substrates

Materials ◽

10.3390/ma11122392 ◽

2018 ◽

Vol 11 (12) ◽

pp. 2392 ◽

Cited By ~ 4

Author(s):

Changlong Cai ◽

Deqiang Zhang ◽

Weiguo Liu ◽

Jun Wang ◽

Shun Zhou ◽

...

Keyword(s):

Thin Films ◽

Perovskite Phase ◽

Sol Gel ◽

Pyroelectric Coefficient ◽

X Ray Diffraction ◽

Si Substrates ◽

A Value ◽

Giant Dielectric ◽

Current Densities ◽

Pyroelectric Response

The [001]-oriented Pr3+ doped Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol–gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in Pr-PMN-PT thin films annealed at 650 °C for 3 min. The dielectric constant (εr) value was 2400 in 2.5% Pr-PMN-PT thin films at room temperature, 110% higher than that of pure PMN-PT samples. Through 2.5% Pr3+ doping, remanent polarization (Pr) and coercive field (Ec) values increased from 11.5 μC/cm2 and 35 kV/cm to 17.3 μC/cm2 and 63.5 kV/cm, respectively, in PMN-PT thin films. The leakage current densities of pure and 2.5% Pr-PMN-PT thin films were on the order of 1.24 × 10−4 A/cm2 and 5.8 × 10−5 A/cm2, respectively, at 100 kV/cm. A high pyroelectric coefficient (py) with a value of 167 μC/m2K was obtained in 2.5% Pr-PMN-PT thin films on Si substrate, which makes this material suitable for application in infrared detectors.

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Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

Journal of Materials Chemistry C ◽

10.1039/c4tc02886d ◽

2015 ◽

Vol 3 (9) ◽

pp. 2115-2122 ◽

Cited By ~ 43

Author(s):

Wei Sun ◽

Jing-Feng Li ◽

Qi Yu ◽

Li-Qian Cheng

Keyword(s):

Thin Films ◽

Phase Transition ◽

Sol Gel ◽

Orthorhombic Phase ◽

High Quality ◽

Si Substrates ◽

Bifeo3 Thin Films ◽

Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

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