Structural and dielectric properties of Ca1-x MgxCu3Ti4O12 thin films

2003 ◽  
Vol 785 ◽  
Author(s):  
L. A. Bermúdez ◽  
R. P. Guzman ◽  
M.S. Tomar ◽  
R.E. Melgarejo
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
High Dielectric Constant ◽  
Film Material ◽  
X Ray Diffraction ◽  
Detailed Characterization ◽  
Chemical Route ◽  
X Ray ◽  
High Dielectric

ABSTRACTCa1-xMgxCu3Ti4O12 material has been synthesized by chemical route for different compositions and thin films have been deposited by spin coating. X-ray diffraction and Raman spectroscopy were used for detailed characterization of this material for both powder and thin films. X-ray diffraction shows single phase film material for different compositions x < 0.80. The initial measurements on dielectric response indicates high dielectric constant > 10, 000 for the composition x = 0.1.

Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

1999 ◽  
Vol 595 ◽  
Author(s):  
W.P. Li ◽  
R. Zhang ◽  
J. Yin ◽  
X.H. Liu ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
High Frequency ◽  
High Dielectric Constant ◽  
Oxide Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Active Layers ◽  
Pzt Films ◽  
High Dielectric ◽  
Mos Structures

AbstractGaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 µm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

The Synthesis and Characterization of SrTiO3 Film Fabricated by Micro Arcoxidation

2011 ◽  
Vol 311-313 ◽  
pp. 1262-1266 ◽  
Author(s):  
Hui Yong Guo ◽  
Wen Bo Huang ◽  
Wen Fang Li ◽  
Guo Ge Zhang ◽  
En Fu Wang
Keyword(s):  
Surface Morphology ◽  
High Dielectric Constant ◽  
Electrolyte Concentration ◽  
Pure Titanium ◽  
Xrd Analysis ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Dielectric

Pure titanium plates as anode and mixture of solutions containing 0.2M Sr(OH)2and 0.2M NaOH as electrolyte, titanium plates were microarc-oxidated for 10 minutes. X-Ray Diffraction (XRD) analysis indicated that SrTiO3film was successfully deposited. The MAO film is composed mainly of tetragonal SrTiO3phases and found to possess high dielectric constant of 371.0 at the frequency of 1 kHz. Scanning Electron Microscopy (SEM) and portable roughness tester were used to characterize the surface morphology and roughness values(Ra), The influences of electrolyte concentration, current density and frequency on the surface morphology of SrTiO3film were investigated in detail . several rules were drawn from the results. A kinetics expression was established for the growth of film thickness and agreed well with the experimental results.

Preparation and Characterization of Tourmaline/ZnO Composite Thin Films by a Facile Wet-Chemical Route

2014 ◽  
Vol 809-810 ◽  
pp. 649-653 ◽  
Author(s):  
Yun Guo ◽  
Qing Huang Zhang ◽  
Li Rong Wang ◽  
Wen Zhao Lu ◽  
Lin Jun Wang
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Chemical Route ◽  
Composite Thin Films ◽  
X Ray ◽  
Peak Intensity ◽  
Wet Chemical ◽  
Wet Chemical Route

A series of tourmaline/ZnO composite thin films were prepared by the facile route of low-temperature wet chemical method. X-ray diffraction (XRD) and Raman Spectroscopy analyses showed the hybrid spectroscopic characters of tourmaline and ZnO. With adding the different amount of tourmaline powder, ZnO tended to exhibit the different peak intensity of X-ray diffraction and Raman vibration. ZnO deposited into bending nanosheets and intersected to upstanding nanostucture on the surface of tourmaline particles in SEM images. The optical adsorption properities obtained by the UV-Vis spectra indicated that the addition of tourmaline had enhanced the maximum absorption strength, and had shifted the absorption wavelength and the absorption range of ZnO crystals.

scholarly journals Fabrication and Characterization of Metalferroelectric-GAN Structures

2000 ◽  
Vol 5 (S1) ◽  
pp. 598-604
Author(s):  
W.P. Li ◽  
R. Zhang ◽  
J. Yin ◽  
X.H. Liu ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
High Frequency ◽  
High Dielectric Constant ◽  
Oxide Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Active Layers ◽  
Pzt Films ◽  
High Dielectric ◽  
Mos Structures

GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 μm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

The Synthesis and Characterization of Ba0.5Sr0.5TiO3 Film Fabricated by Micro Arc Oxidation

2012 ◽  
Vol 151 ◽  
pp. 266-270
Author(s):  
Ming Wang ◽  
Hui Yong Guo ◽  
Wen Bo Huang ◽  
Wen Fang Li
Keyword(s):  
Surface Morphology ◽  
High Dielectric Constant ◽  
Energy Dispersive Spectrometer ◽  
X Ray Diffraction ◽  
Titanium Plate ◽  
X Ray ◽  
Low Dielectric ◽  
Micro Arc Oxidation ◽  
High Dielectric

Ba0.5Sr0.5TiO3film was successfully fabricated by micro arc oxidation of titanium plate in aqueous solution containing Sr(OH)2and Ba(OH)2for 25 minutes. X-ray diffraction , energy dispersive spectrometer and scanning electron microscopy were used to characterize the crystalline structure, elements composition and surface morphology and HP4284 capacitance prober was used to analyze the dielectric properties of the film. The micro arc oxidation film is mainly composed of tetragonal Ba0.5Sr0.5TiO3 phases and possesses both high dielectric constant of 454.2 and low dielectric loss of 0.052 at the frequency of 100Hz.The surface morphology appeares smooth and homogeneous except that some holes are uniformly distributed outwardly.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray
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