Diffusion in Co-Ni System Studied by Multifoil Technique

2011 ◽  
Vol 312-315 ◽  
pp. 466-471 ◽  
Author(s):  
V.D. Divya ◽  
U. Ramamurty ◽  
Aloke Paul
Keyword(s):  
Activation Energy ◽  
Binary System ◽  
Diffusion Couple ◽  
Diffusion Coefficients ◽  
Impurity Diffusion ◽  
Intrinsic Diffusion ◽  
Exponential Factor ◽  
Temperature Range

Diffusion couple experiments were performed in the Co-Ni binary system for determining inter-, impurity- and intrinsic-diffusion coefficients in the temperature range of 1050 - 1250°C. The activation energy and pre-exponential factor estimated for interdiffusion do not vary significantly with composition. The activation energy calculated for impurity diffusion experiments shows is higher than . Intrinsic diffusion coefficients estimated from the multifoil experiment show that Ni is the fastest diffusing species in this system.

'Up-Hill' Interdiffusion and Accompanying Effects in Ternary Cu-Ni-5 at. % Sn(In) Systems

2005 ◽  
Vol 237-240 ◽  
pp. 456-461 ◽  
Author(s):  
Semen Kornienko ◽  
Lyudmila N. Paritskaya ◽  
V.V. Bogdanov
Keyword(s):  
Activation Energy ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Kinetic Equations ◽  
Diffusion Activation Energy ◽  
Phase Growth ◽  
Exponential Factor ◽  
Temperature Range ◽  
Kinetics Of ◽  
Diffusion Activation

Kinetics of phase growth in multiphase Cu-Sn and Ni-Sn systems and effect of third substitutive component (Ni or Cu respectively) were studied experimentally in temperature range 160-220oC and analyzed theoretically. Kinetic equations for calculation of diffusion coefficients in growing competitive phases were obtained. It was found that the substitutive components accelerated phase growth lowering the values of diffusion activation energy and pre-exponential factor. As a result the growth rates of competitive phases Cu6Sn5 and Cu3Sn in Cu-Sn system changed with substitutive Ni so, that only one (CuNi)6Sn5 phase survived whereas (CuNi)3Sn phase was suppressed. Obtained results are discussed in terms of higher disordering caused by substitutive components in ternary phases as compared with binary ones.

Diffusion of ion-implanted Boron and Silicon in Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Diffusion Coefficients ◽  
Doping Concentration ◽  
Diffusion Mechanism ◽  
Concentration Profiles ◽  
Furnace Annealing ◽  
Temperature Range ◽  
Self Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Interdiffusion in Nb-Mo, Nb-Ti and Nb-Zr Systems

2012 ◽  
Vol 323-325 ◽  
pp. 491-496 ◽  
Author(s):  
Soma Prasad ◽  
Aloke Paul
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Diffusion Couple ◽  
Impurity Diffusion ◽  
Impurity Diffusion Coefficient ◽  
Different Temperatures ◽  
Diffusion Couple Technique ◽  
Interdiffusion Coefficients

Diffusion couple technique is used to study interdiffusion in Nb-Mo, Nb-Ti and Nb-Zr systems. Interdiffusion coefficients at different temperatures and compositions are determined using the relation developed by Wagner. The change in activation energy for interdiffusion with composition is determined. Further, impurity diffusion coefficient of the species are determined and compared with the available data in literature.

Hydrogen Diffusion in Chalcopyrite Solar Cell Materials

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Weidinger ◽  
J. Krauser ◽  
Th. Riedle ◽  
R. Klenk ◽  
M. Ch. Lux-Steiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Transport Process ◽  
Hydrogen Diffusion ◽  
Intrinsic Diffusion ◽  
Ion Energy ◽  
Temperature Range

ABSTRACTHydrogen diffusion in CuInSe 2 single crystals and CuInS2 thin films was studied by measuring the spreading of implantation profiles upon annealing. Deep implantation with an ion energy of 10 keV and sub-surface implantation with 300 eV were applied. The diffusion coefficients in both materials were found to be in the order of 10-14 to 10-13 cm2/s in the temperature range between 400 and 520 K.These fairly low diffusivities are typical for a trap and release transport process rather than intrinsic diffusion of interstitial hydrogen. In the polycrystalline CuInS2 films, hydrogen leaves the sample through the grain boundaries.

Interdiffusion Between Mo and TiAl

1992 ◽  
Vol 273 ◽  
Author(s):  
Min-Xian Zhang ◽  
Ker-Chang Hsieh ◽  
Y. Austin Chang
Keyword(s):  
Diffusion Couple ◽  
Diffusion Coefficients ◽  
Intrinsic Diffusion ◽  
The Cross ◽  
Two Phases ◽  
Interdiffusion Coefficients

ABSTRACTDiffusion couple experiments were carried out for Mo/γ-TiAl at 900, 1000 and 1100°C for periods of time ranging from 121 to 553 hrs. Using the Boltzmann-Matano analysis, the two diagonal interdiffusion coefficients for the two phases formed in these couples were obtained assuming the cross diagonal terms to be negligible. These two phases are δ-(Mo, Ti)3Al and β-(Mo,Al)Ti. The three intrinsic diffusion coefficients were also obtained using the Darken-type relationships between the interdiffusion and intrinsic diffusion coefficients. The calculated interdiffusion coefficients from the three intrinsic diffusion coefficients are in reasonable accord with those obtained directly from the Boltzmann-Matano analysis.

Fe tracer diffusion in L10 ordered FePt

2002 ◽  
Vol 753 ◽  
Author(s):  
Y. Nosé ◽  
T. Ikeda ◽  
H. Nakajima ◽  
K. Tanaka ◽  
H. Numakura
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Single Crystal ◽  
Diffusion Coefficients ◽  
Ion Beam ◽  
Tracer Diffusion ◽  
Ordered Structure ◽  
Tracer Diffusion Coefficient ◽  
Exponential Factor ◽  
Axis Direction

ABSTRACTTracer diffusion coefficient of 59Fe in FePt with the tetragonal L10 ordered structure has been measured by an ion-beam sputter-sectioning technique in the temperature range from 1173 to 1374 K. Anisotropy in diffusion has been studied using single-variant single-crystal specimens. The diffusion coefficient in the direction perpendicular to [001] axis (in the a-axis direction), Da, is larger than that in the [001] (c-axis) direction, Dc, as expected from the atomic arrangement of the L10 ordered structure. The ratio of the diffusion coefficients, Da/Dc, is 1.33.6 for Fe42Pt58 and smaller at higher temperatures. The activation energy for the diffusion is 259 ± 1 kJ/mol for Da and 309 ± 18 kJ/mol for Dc, while the pre-exponential factor is and , respectively in Fe42Pt58.

About Fe Diffusion in Cu

2012 ◽  
Vol 323-325 ◽  
pp. 171-176 ◽  
Author(s):  
D. Prokoshkina ◽  
A.O. Rodin ◽  
V. Esin
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Temperature Dependence ◽  
Boundary Diffusion ◽  
Bulk Diffusion ◽  
Grain Boundary Diffusion ◽  
Radiotracer Technique ◽  
Exponential Factor ◽  
Temperature Range

The temperature dependence of the bulk diffusion coefficient of Fe in Cu is determined by EDX in the temperature range from 923 to 1273 K, , m2/s. These results are different from that obtained earlier by radiotracer technique: activation energy is less by 30 kJ/mol and pre-exponential factor is 50 times smaller. Deviations from ideality of investigated solutions do not explain the differences; consequently, the thermodynamical factor would not responsible for such an effect. Fast grain boundary diffusion of Fe in Cu was not observed in the temperature range from 823 to 1073 K.

Ionic Conductivity of Polycrystalline Li2GexSi1-xO3 (x = 0.0~1.0)

2010 ◽  
Vol 459 ◽  
pp. 27-31 ◽  
Author(s):  
Shinichi Furusawa ◽  
Shun Enokida
Keyword(s):  
Activation Energy ◽  
Solid State ◽  
Ionic Conductivity ◽  
Solid State Reaction ◽  
Arrhenius Equation ◽  
Ionic Conduction ◽  
Exponential Factor ◽  
Temperature Range

Polycrystalline Li2GexSi1-xO3 (x = 0.0~1.0) was synthesized by solid state reaction, and its ionic conductivity was studied as a function of x in a temperature range of 500–700 K. The ionic conductivity was found to depend on x and was enhanced at x = 0.2–0.7. Furthermore, the pre-exponential factor and activation energy in the Arrhenius equation were also found to depend on x. These results suggest that lithium ionic conduction in Li2GexSi1-xO3 is strongly influenced by the structure of the framework.

Interdiffusion between the L12 trialuminides Al66Ti25Mn9 and Al67Ti25Cr8

1992 ◽  
Vol 7 (5) ◽  
pp. 1043-1045 ◽  
Author(s):  
K.S. Kumar ◽  
J.D. Whittenberger
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficients ◽  
Diffusion Couples ◽  
Temperature Range ◽  
Interdiffusion Coefficients ◽  
Mn Concentration

Interdiffusion coefficients (D) were determined in the temperature range 1373 K–1073 K (0.85 Tm−0.65 Tm) from concentration-distance profiles that were generated from Al66Ti25Mn9/Al67Ti25Cr8 diffusion couples. As both of these materials are completely soluble in one another, the couples were treated as pseudobinaries (particularly because the Ti and Al levels were similar), and the Matano approach was used to calculate diffusion coefficients. The variation in D with composition was determined and a minimum was noted at intermediate temperatures and a relative Mn concentration of 0.5. A maximum in activation energy for interdiffusion was also noted at this concentration where Q ≍ 350 kJ/mol.

SELF-DIFFUSION IN BODY-CENTERED CUBIC ZIRCONIUM

1961 ◽  
Vol 39 (8) ◽  
pp. 1146-1157 ◽  
Author(s):  
G. Kidson ◽  
J. McGurn
Keyword(s):  
Activation Energy ◽  
Melting Point ◽  
Soviet Union ◽  
Diffusion Process ◽  
Diffusion Coefficients ◽  
Body Centered Cubic ◽  
Exponential Factor ◽  
Considerable Evidence ◽  
Self Diffusion ◽  
The Soviet Union

Self-diffusion coefficients of crystal-bar zirconium have been measured between 1500 °C and 1100 °C, using radioactive Zr95 as a tracer. The results may be represented by[Formula: see text]The pre-exponential factor is about three orders of magnitude smaller than that measured in most close-packed systems and the activation energy about one-half that anticipated from an empirical correlation with the melting point. The results, however, are similar to those of a few other recently studied body-centered cubic (BCC) systems, and agree quantitatively with work in the Soviet Union on zirconium. There is considerable evidence that the diffusion process occurs via vacant lattice sites.

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