Guided Control of Cu2O Nanodot Self-Assembly on SrTiO3 (100)

2004 ◽  
Vol 811 ◽  
Author(s):  
Yingge Du ◽  
Surajit Atha ◽  
Robert Hull ◽  
James F. Groves ◽  
Igor Lyubinetsky ◽  
...  

ABSTRACTA method has been developed for specifying the growth location of Cu2O nanodotson SrTiO3 (100) substrates. Growth location has been specified by using a focused ion beam (FIB) to modify microscopic and nanoscopic regions of the SrTiO3substrate prior to Cu2O deposition. Deposition onto the modified regions under carefully selected process conditions has generated nanodot growth at the edge of microscopic FIB-induced features and on top of nanoscopic FIB-induced features. For this work, an array of evenly spaced FIB implants was first patterned into several regions of each substrate. Within each sub-division of the array, the FIB implants were identical in Ga+ energy and dosage and implant diameter and spacing. After FIB surface modification and subsequent in-situ substrate cleaning, Cu2O nanodots were synthesized on the patterned SrTiO3 substrates using oxygen plasma assisted molecular beam epitaxy. The substrates and nanodots were characterized using atomic force microscopy at various stages of the process; in-situ X-ray photoelectron spectroscopy and Auger electron spectroscopy analysis demonstrated that the final stoichiometry of the nanodots was Cu2O. The photocatalytic decomposition of water on Cu2O under visible light irradiation has been reported. If the Cu2O can be located in the form ofislands on a carefully selected substrate, then it could be possible to greatly enhance the efficiency of the photochemical process.

Nanophotonics ◽  
2017 ◽  
Vol 6 (5) ◽  
pp. 923-941 ◽  
Author(s):  
Gediminas Seniutinas ◽  
Armandas Balčytis ◽  
Ignas Reklaitis ◽  
Feng Chen ◽  
Jeffrey Davis ◽  
...  

AbstractThe evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.


Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1414
Author(s):  
Jiyoung Son ◽  
Edgar C. Buck ◽  
Shawn L. Riechers ◽  
Shalini Tripathi ◽  
Lyndi E. Strange ◽  
...  

We developed a new approach to attach particles onto a conductive layer as a working electrode (WE) in a microfluidic electrochemical cell with three electrodes. Nafion, an efficient proton transfer molecule, is used to form a thin protection layer to secure particle electrodes. Spin coating is used to develop a thin and even layer of Nafion membrane. The effects of Nafion (5 wt% 20 wt%) and spinning rates were evaluated using multiple sets of replicates. The electrochemical performance of various devices was demonstrated. Additionally, the electrochemical performance of the devices is used to select and optimize fabrication conditions. The results show that a higher spinning rate and a lower Nafion concentration (5 wt%) induce a better performance, using cerium oxide (CeO2) particles as a testing model. The WE surfaces were characterized using atomic force microscopy (AFM), scanning electron microscopy-focused ion beam (SEM-FIB), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and X-ray photoelectron spectroscopy (XPS). The comparison between the pristine and corroded WE surfaces shows that Nafion is redistributed after potential is applied. Our results verify that Nafion membrane offers a reliable means to secure particles onto electrodes. Furthermore, the electrochemical performance is reliable and reproducible. Thus, this approach provides a new way to study more complex and challenging particles, such as uranium oxide, in the future.


2012 ◽  
Vol 1421 ◽  
Author(s):  
Russell J. Bailey ◽  
Remco Geurts ◽  
Debbie J. Stokes ◽  
Frank de Jong ◽  
Asa H. Barber

ABSTRACTThe mechanical behavior of nanocomposites is critically dependent on their structural composition. In this paper we use Focused Ion Beam (FIB) microscopy to prepare surfaces from a layered polymer nanocomposite for investigation using phase contrast atomic force microscopy (AFM). Phase contrast AFM provides mechanical information on the surface examined and, by combining with the sequential cross-sectioning of FIB, can extend the phase contract AFM into three dimensions.


2009 ◽  
Vol 1228 ◽  
Author(s):  
Hao Wang ◽  
Greg C. Hartman ◽  
Joshua Williams ◽  
Jennifer L. Gray

AbstractThere are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.


1999 ◽  
Vol 562 ◽  
Author(s):  
Stephan Grunow ◽  
Deda Diatezua ◽  
Soon-Cheon Seo ◽  
Timothy Stoner ◽  
Alain E. KaloyerosI

ABSTRACTAs computer chip technologies evolve from aluminum-based metallization schemes to their copper-based counterparts, Electrochemical Deposition (ECD) is emerging as a viable deposition technique for copper (Cu) interconnects. This paper presents the results of a first-pass study to examine the underlying mechanisms that control ECD Cu nucleation, growth kinetics, and post-deposition microstructure evolution (self-annealing), leading to the development and optimization of an ECD Cu process recipe for sub-quarter-micron device generations. The influence of bath composition, current waveform, type and texture of Cu seed layer, and device feature size (scaling effect) on the evolution of film texture, morphology, electrical properties, and fill characteristics was investigated using a manufacturing-worthy ReynoldsTech 8″ wafer plating tool. Resulting films were analyzed by X-ray Diffraction (XRD), four-point resistivity probe, Focused-Ion-Beam Scanning Electron Microscopy (FIB-SEM), and Atomic Force Microscopy (AFM). These investigations identified an optimized process window for the complete fill of aggressive device structures with pure Cu with resistivity ∼ 2.0 μΩ-cm and smooth surface morphology.


1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.


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