Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

2013 ◽  
Vol 774-776 ◽  
pp. 964-967
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Co Doping ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Cu Ions ◽  
Co Doped

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.

The Structural, Electrical, Magnetic Properties of (Cu, Co) Co-Doped ZnO Thin Film

2014 ◽  
Vol 556-562 ◽  
pp. 429-432
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
Ferromagnetic Semiconductors ◽  
Zno Thin Film ◽  
Zno Film ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

Successful synthesis of room-temperature ferromagnetic semiconductors, (Cu, Co) co-doped ZnO film is obtained by sol-gel method. It is found that the essential ingredient in achieving room-temperature ferromagnetism is Cu co-doping. By Hall-effect measurement ap-type conductivity was observed for the Cu co-doped films, which induced the room-temperature ferromagnetism.

Ga-Sn Co-Doped ZnO Films via Sol-Gel Route

2018 ◽  
Vol 280 ◽  
pp. 43-49
Author(s):  
Zi Neng Ng ◽  
Kah Yoong Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Films ◽  
Axis Orientation ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

Zinc oxide (ZnO) has gained worldwide attention due to its direct wide band gap and large exciton binding energy, which are important properties in the application of emerging optoelectronic devices. By doping ZnO with donor elements, a combination of good n-type conductivity and good transparency in the visible and near UV range can be achieved. Co-doping ZnO with several types of dopants is also beneficial in improving the electronic properties of ZnO films. To the best of our knowledge, the fundamental properties of gallium-tin (Ga-Sn) co-doped ZnO (GSZO) films were rarely explored. In this work, we attempt to coat GSZO films on glass substrates via sol-gel spin-coating method. The Ga-Sn co-doping ratio was fixed at 1:1 and the concentration of the dopants was varied at 0.5, 1.0, 1.5, and 2 at.% with respect to the precursor. The AFM image show granular features on the morphology of all GSZO films. All samples also exhibit a preferential c-axis orientation as detected by XRD. The XRD indicates higher crystal quality and larger crystallite size on GSZO thin films at 2.0 at.% and agrees well with the AFM results. However, the transparency and optical band-gap of the GSZO thin films degrade with higher co-doping concentration. The best electrical properties were achieved at co-doping concentration of 1 at.% with conductivity and carrier density of 7.50 × 10-2S/cm and 1.37 × 1016cm-3, respectively. At 1.0 at.% co-doping concentration, optimal optical transmittance and electrical properties were achieved, making it promising in the application of optoelectronics.

Effect of cobalt doping on microstructures and dielectric properties of ZnO

2019 ◽  
Vol 97 (3) ◽  
pp. 227-232 ◽  
Author(s):  
Ye Zhao ◽  
Fan Tong ◽  
Mao Hua Wang
Keyword(s):  
Zno Nanoparticles ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Sem Analysis ◽  
Co Doping ◽  
In Doping ◽  
Zno Powders ◽  
Doped Zno ◽  
Zno Crystal ◽  
Co Doped

Pure and cobalt-doped ZnO nanoparticles (2.5, 5, 7.5, and 10 atom % Co) are synthesized by sol–gel method. The as-synthesized nanoparticles are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and field emission scanning electron microscopy (FE-SEM) analysis. The nanoparticles of 0, 2.5, and 5 atom % Co-doped ZnO exhibited hexagonal wurtzite structure and have no other phases. Moreover, the (101) diffraction peaks position of Co-doped ZnO shift toward a smaller value of diffraction angle compared with pure ZnO powders. The results confirm that Co ions were well incorporated into ZnO crystal lattice. Simultaneously, Co doping also inhibited the growth of particles, and the crystallite size decreased from 43.11 nm to 36.63 nm with the increase in doping concentration from 0 to 10 atom %. The values of the optical band gap of all Co-doped ZnO nanoparticles gradually decreased from 3.09 eV to 2.66 eV with increasing Co content. Particular, the dielectric constant of all Co-doped ZnO ceramics gradually increased from 1.62 × 103 to 20.52 × 103, and the dielectric loss decreased from 2.36 to 1.28 when Co content increased from 0 to 10 atom %.

Structural and Electrical Properties of Al and B Co-Doped ZnO Thin Films

2011 ◽  
Vol 6 (3) ◽  
pp. 301-305 ◽  
Author(s):  
Hun-Jae Im ◽  
Hyo-Ki Hong ◽  
Jung-A Lee ◽  
Joon-Hyung Lee ◽  
Young-Woo Heo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Co Doped

scholarly journals ENHANCED FERROELECTRICITY AND FERROMAGNETISM OF (Y, Ni) CO-DOPED BiFeO3 MATERIALS

2018 ◽  
Vol 56 (1A) ◽  
pp. 219
Author(s):  
Dao Viet Thang
Keyword(s):  
Ferroelectric Properties ◽  
Sol Gel ◽  
Rhombohedral Structure ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Doping ◽  
Saturation Polarization ◽  
Perovskite Type ◽  
Co Doped

In this study, multiferroicMultiferroic Bi1-xYxFe0.975Ni0.025O3 (x = 0.00, 0.05, 0.10, and 0.15) called as (Y, Ni)                co-doped BiFeO3 materials were synthesized by a sol-gel method.  and characterized by X-ray diffraction diagrams and(XRD), energy-dispersive X-ray (EDX) and vibrating sample magnetization (VSM) measurements demonstrated. The result showed that Bi1-xYxFe0.975Ni0.025O3all investigated materials waspresent a single phase of the perovskite-type rhombohedral structure. Ferromagnetism and ferroelectricity of the Bi1-xYxFe0.975Ni0.025O3 materials have been investigated. Results showed that the co-doping by (Y, Ni) for (Bi, Fe)  have affected in enhancing by the (Y, Ni) co-doping, as a result the ferroelectric polarization and magnetization of BiFeO3. The magnetic characterization indicated that the ferromagnetic behavior wasthe initial BiFeO3 materialwere enhanced with increasing concentration of Y3+ for (Y, Ni) co-substituted of BiFeO3. Which could beion. It is attributed to the defferentdifference of the magnetic momentmoments of Ni2+ and Fe3+, and+ ions, as well as the Y3+-Fe3+,+ and Y3+-Ni2+ super-exchange interaction. Theinteractions. The characteristics of the investigated materials, such as remanent magnetization (Mr), saturation magnetization (Ms), remanent polarization (2Pr) and saturation polarization (2Ps) continuously increase upon increasing in the range of x from 0.00 to 0.15. When x = 0.15, the values of Mr and Ms are 0.078 and 0.794 emu/g, respectively. The values of 2Pr and 2Ps are 16.58 and 27.99 µC/cm2, respectively. Origin of ferromagnetic and ferroelectric properties of Bi1-xYxFe0.975Ni0.025O3 materials will be discussed in this paper.

scholarly journals Hydrogen Sensing Properties of Co-Doped ZnO Nanoparticles

Chemosensors ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 61 ◽  
Author(s):  
Fatemeh Moosavi ◽  
Mohammad Ebrahim Bahrololoom ◽  
Ramin Kamjou ◽  
Ali Mirzaei ◽  
Salvatore Gianluca Leonardi ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
High Performance ◽  
Gas Sensing ◽  
Sol Gel ◽  
Breath Hydrogen ◽  
Zno Nps ◽  
Sensing Properties ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

In this study, the gas sensing properties of Co-doped ZnO nanoparticles (Co-ZnO NPs) synthesized via a simple sol-gel method are reported. The microstructure and morphology of the synthesized Co-ZnO NPs were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM), respectively. Co-ZnO NPs were then used for developing a conductometric gas sensor for the detection, at mild temperature, of low concentration of hydrogen (H2) in air. To evaluate the selectivity of the sensor, the sensing behavior toward some VOCs such as ethanol and acetone, which represent the most important interferents for breath hydrogen analysis, was also investigated in detail. Results reported demonstrated better selectivity toward hydrogen of the Co-ZnO NPs sensor when compared to pure ZnO. The main factors contributing to this behavior, i.e., the transition from n-type behavior of pristine ZnO to p-type behavior upon Co-doping, the modification of oxygen vacancies and acid-base characteristics have been considered. Hence, this study highlights the importance of Co doping of ZnO to realize a high performance breath hydrogen sensor.

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

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