In situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots

2004 ◽  
Vol 839 ◽  
Author(s):  
H. S. Kim ◽  
J. H. Suh ◽  
C. G. Park ◽  
S. J. Lee ◽  
S. K. Noh ◽  
...  

ABSTRACTSelf-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy technique and the structure and the thermal stability of QDs have been studied by using high resolution electron microscopy with in-situ heating experiment capability. The QDs were found to form a hemispherical structure with {136} side facet in the early stage of growth. The average height and diameter of the QD were found to be ∼ 5.5 nm and ∼ 23 nm, respectively. Upon capping by GaAs layer, however, the apex structure of QD changed to a flat one. In-situ heating experiment within TEM revealed that the uncapped QD remained stable until 580°C. However, at temperature above 600°C, the QD structure became flat due to the fast decrease of QD height. After flattening, the atoms diffused from the InAs QD to the GaAs substrate, resulting in the total collapse. The density of the QD decreased abruptly by this collapse and most QDs disappeared at above 600°C.

2005 ◽  
Vol 285 (1-2) ◽  
pp. 137-145 ◽  
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park ◽  
Sang Jun Lee ◽  
Sam Kyu Noh ◽  
...  

2018 ◽  
Vol 505 ◽  
pp. 207-211 ◽  
Author(s):  
Jian Gan ◽  
Cheng Sun ◽  
Lingfeng He ◽  
Yongfeng Zhang ◽  
Chao Jiang ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (21) ◽  
pp. 11684-11693
Author(s):  
Eduardo Solano ◽  
Jolien Dendooven ◽  
Ji-Yu Feng ◽  
Philipp Brüner ◽  
Matthias M. Minjauw ◽  
...  

Supported Pt nanoparticle stabilization via Atomic Layer Deposition overcoating with Al2O3 has been proved to prevent particle coarsening during thermal annealing for widely spaced nanoparticles while ensuring surface accessibility for applications.


Nanomaterials ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 4 ◽  
Author(s):  
Bin Zhang ◽  
Xiaowei Zhao ◽  
Tianrui Dong ◽  
Aijuan Zhang ◽  
Xiao Zhang ◽  
...  

Thermal stability of core-shell structured nanoparticles is of vital importance to their practical applications at elevated temperature. Understanding the evolution of chemical distribution and the crystal structure of core-shell nanostructures with temperature variation at the nanoscale will open the route for practical applications and property enhancement of nanoparticles through proper design of new nanomaterials. In this study, core-shell non-stoichiometric Cu5FeS4 icosahedral nanoparticles were investigated by in situ heating transmission electron microscopy. Compared to the high structural and compositional stability at room temperature, the interdiffusion of Cu and Fe atoms became significant, ending up with disappearance of chemical difference in the core and shell over 300 °C. In contrast, different crystal structures of the core and shell were preserved even after heating at 350 °C, indicating the high structural stability. The inconsistency between chemical composition and crystal structure should be ascribed to the interaction between the intrinsic strain existing in the icosahedrons and various structures of this material system. In other words, the geometrically intrinsic strain of the nano-icosahedrons is helpful to modulate/maintain the core-shell structure. These findings open new opportunities for revealing the thermal stability of core-shell nanostructures for various applications and are helpful for the controllable design of new core-shell nanostructures.


Nanoscale ◽  
2020 ◽  
Vol 12 (46) ◽  
pp. 23673-23681
Author(s):  
Shikhar Misra ◽  
Di Zhang ◽  
Ping Lu ◽  
Haiyan Wang

Thermal stability of an ordered three-phase Au–BaTiO3–ZnO vertically aligned nanostructure by both ex situ annealing under air and vacuum conditions, and in situ heating in TEM in vacuum has been demonstrated.


2005 ◽  
Vol 20 (7) ◽  
pp. 1741-1750
Author(s):  
L.C. Nistor ◽  
O. Richard ◽  
C. Zhao ◽  
H. Bender ◽  
G. Van Tendeloo

The thermal stability of amorphous Zr:Al mixed oxide films of different composition, produced on (001) silicon wafers by the atomic layer deposition method is studied by transmission electron microscopy during in situ heating experiments. The temperatures at which phase separation and crystallization occur are composition dependent. The crystallization of thick films (55–70 nm), deposited on HF-treated silicon surfaces covered with a 15 cycles Al2O3 layer, results in the formation of cubic ZrO2 and cubic γ–Al2O3. In very thin films (5 nm), deposited on silicon surfaces covered with a 0.5 nm SiO2 thin film, the formation of tetragonal zirconium disilicide (ZrSi2) is observed in the microscope vacuum, at temperatures above 900 °C. This effect depends on the thickness of the as deposited thin film.


Author(s):  
Yulong Li ◽  
Jingliang Cheng ◽  
Xu Wang ◽  
Yang Liu ◽  
Xiangyang Liu

Thermal stability of fluorinated graphene (FG) plays an important role in its application and research, so it is necessary to conduct in-depth research on thermal stability of C-F bond in...


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