Suppression of Dewetting in Pulsed Laser Melting of Thin Metallic Films on SiO2

2004 ◽  
Vol 854 ◽  
Author(s):  
J. Eric Kline ◽  
John P. Leonard
Keyword(s):  
Sample Preparation ◽  
Excimer Laser ◽  
Pulsed Laser ◽  
Metal Films ◽  
Processing Maps ◽  
Basic Process ◽  
Metallic Films ◽  
Laser Melting ◽  
Process Map ◽  
Experimental Parameters

ABSTRACTPulsed excimer laser projection irradiation has been successfully applied to completely melt and resolidify encapsulated elemental metal films of Au, Cu, Cr, and Ni directly on amorphous SiO2 substrates. A combination of narrow irradiated lines and appropriate SiO2 capping layers was used to obtain films that do not dewet when fully melted. Detailed processing maps were generated for Au and Ni, while equivalent trends for Cu and Cr were also noted. These systems were analyzed for common behaviors, and from these the principle factors, a basic process map is proposed to describe adequately these four systems. Experimental parameters and sample preparation criteria are presented to realize such resolidification studies in other metal systems.

Suppression of dewetting phenomena during excimer laser melting of thin metal films on SiO2

2005 ◽  
Vol 488 (1-2) ◽  
pp. 306-313 ◽  
Author(s):  
J.E. Kline ◽  
J.P. Leonard
Keyword(s):  
Excimer Laser ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Laser Melting

Time-Resolved Measurements of Solidification and Undercooling in Metals and Alloys

1989 ◽  
Vol 157 ◽  
Author(s):  
Harry A. Atwater ◽  
Jeffrey A. West ◽  
Patrick M. Smith ◽  
M.J. Aziz ◽  
J.Y. Tsao ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Heat Flow ◽  
Rapid Solidification ◽  
Pulsed Laser ◽  
Metal Films ◽  
Laser Melting ◽  
Time Resolved ◽  
Resistivity Measurements ◽  
Planar Crystal

ABSTRACTWe have performed nanosecond-resolution measurements of the lateral electrical resistivity of thin metal films on insulating substrates. Comparison of transient resistivity measurements with optical reflectivity measurements and heat-flow calculations permits the determination of the position and velocity of a planar crystal/melt interface, and an estimate of undercooling during pulsed laser melting of metals. We report detailed results for rapid solidification of Ni, including the observation of hypercooling of .liquid Ni.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

Submicrometer-sized Spherical Iron Oxide Particles Fabricated by Pulsed Laser Melting in Liquid

2015 ◽  
Vol 135 (9) ◽  
pp. 1066-1070
Author(s):  
Yoshie Ishikawa ◽  
Naoto Koshizaki ◽  
Alexander Pyatenko
Keyword(s):  
Iron Oxide ◽  
Pulsed Laser ◽  
Iron Oxide Particles ◽  
Laser Melting ◽  
Oxide Particles

Reduction Mechanism of Transition Metal Oxide Particles in Thermally Induced Nanobubbles by Pulsed Laser Melting in Ethanol

ChemPhysChem ◽  
2021 ◽  
Author(s):  
Kentaro Suehara ◽  
Ryosuke Takai ◽  
Yoshie Ishikawa ◽  
Naoto Koshizaki ◽  
Kazunobu Omura ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Pulsed Laser ◽  
Transition Metal Oxide ◽  
Reduction Mechanism ◽  
Laser Melting ◽  
Thermally Induced ◽  
Oxide Particles

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

2007 ◽  
Vol 25 (6) ◽  
pp. 1847 ◽  
Author(s):  
Malek Tabbal ◽  
Taegon Kim ◽  
Jeffrey M. Warrender ◽  
Michael J. Aziz ◽  
B. L. Cardozo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Silicon Based

Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

1983 ◽  
Vol 23 ◽  
Author(s):  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy
Keyword(s):  
Electrical Conductance ◽  
Pulsed Laser ◽  
Solute Concentration ◽  
Atomic Percent ◽  
Supersaturated Solution ◽  
Solidification Velocity ◽  
Laser Melting ◽  
Solid Interface ◽  
Solution Studies ◽  
Nonequilibrium Segregation

ABSTRACTTransient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.

Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

2009 ◽  
Vol 1210 ◽  
Author(s):  
Javier Olea Ariza ◽  
David Pastor ◽  
María Toledano-Luque ◽  
Ignacio Mártil ◽  
Germán González-Díaz ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Vibrational Mode ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Intermediate Band ◽  
X Ray ◽  
Tof Sims ◽  
Crystalline Domains ◽  
Secondary Ion

AbstractWe have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

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