Development of Magnetostrictive Fe-Ga and Fe-Pd Thin Films

2004 ◽  
Vol 855 ◽  
Author(s):  
Teiko Okazaki ◽  
Satoru Watanabe ◽  
Norimasa Okanisi ◽  
Toshiro Ono ◽  
Yasubumi Furuya ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Alternating Magnetic Field ◽  
Sensor Systems ◽  
Sensor Actuator ◽  
Small Magnetic Field ◽  
Beam Method ◽  
Device Applications

ABSTRACTThe giant magnetostrictive films exhibit promising device applications for micro-machines and sensor systems due to high response velocity and huge stress created by the magnetostriction. We developed magnetostrictive bimorph-type Fe70Pd30 or Fe83Ga17 (positive magnetostriction)/Al/Ni(negative magnetostriction) thin films by magnetron sputtering. Magnetostriction of these films measured by a bending cantilever beam method has reached 250–300 ppm in the small magnetic field of 1.0 kOe and exhibits little hysteresis. Moreover, the magnetostrictive characteristics do not change under low alternating magnetic field. The magnetoelastic coefficient of these films is 25∼30 MPa, which is comparable to the coefficient of the PbTiO3-PbZrO3 system. These metallic sensor/actuator materials are useful for applications in magnetostrictive 2D- scanners and remote-interrogated tire sensors.

The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

HIGH QUALITY FULLY IN-SITU MgB2 THIN FILMS OBTAINED BY DC MAGNETRON SPUTTERING

2003 ◽  
Vol 17 (04n06) ◽  
pp. 779-784 ◽  
Author(s):  
M. G. MAGLIONE ◽  
F. CHIARELLA ◽  
R. DI CAPUA ◽  
R. VAGLIO ◽  
M. SALVATO ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Target Surface ◽  
Residual Resistivity ◽  
Precursor Film ◽  
Large Area ◽  
Residual Resistivity Ratio ◽  
Resistivity Ratio

MgB 2 thin films were grown in-situ at INFM- University of Naples by a magnetron sputtering technique in a UHV system (10-7 Pa) equipped with 3 focused 2′′ magnetron sources (a stoichiometric MgB 2 and metallic Mg and B targets by Superconducting Components Inc.). The substrates (sapphire or MgO) were placed "on axis" at 7 cm from the target surface on the surface of a molybdenum heater that could be operated up to 1000°C under vacuum. Best results were obtained codepositing MgB 2 and Mg at equal sputtering power (500W) for 10 min on cold substrates, resulting in a Mg rich Mg-B precursor film. The films were then annealed inhyphen;situ at 830°C for 10 min in a In sealed Nb box in presence of saturated Mg vapor. The process is highly reproducible and can be easily scaled to produce large area films. The resulting films were about 1μm thick, with 100nm surface roughness as measured by AFM Resistive transition showed a maximum T c of 35 K and a transition width lower than 0.5 K. The residual resistivity ratio was 1.6 for the best sample. Resistivity measurements in external magnetic field up to 8 T have been performed both in parallel and perpendicular configuration. The upper critical magnetic field vs. temperature behavior has been determined from the experimental data and the superconducting anisotropy has been calculated for samples with different T c .

scholarly journals Preparation of Bi-based Superconducting Thin Films by RF Magnetron Sputtering under Magnetic Field

Shinku ◽  
2004 ◽  
Vol 47 (3) ◽  
pp. 194-196
Author(s):  
Naoki FUJIWARA ◽  
Takahiro ONISHI ◽  
Kouji KATSURAHARA ◽  
Satoru KISHIDA
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Superconducting Thin Films

Asymmetry in Multilayer Adhesion: the Zinc Oxide / Silver Interface

2003 ◽  
Vol 795 ◽  
Author(s):  
E. Barthel ◽  
P. Nael ◽  
O. Kerjan ◽  
N. Nadaud
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
First Principles ◽  
Double Cantilever Beam ◽  
Adhesion Energy ◽  
Adhesion Measurement ◽  
Interfacial Structures ◽  
Set Up

ABSTRACTWe have developed a wedge-loaded double-cantilever beam adhesion measurement set-up for thin films deposited on glass by magnetron sputtering. Results on the Glass/ZnO/Ag/ZnO multilayer evidence that the upper Ag/ZnO interface is tougher than the lower ZnO/Ag interface. This asymmetry in the adhesion energy between identical materials is not expected from first principles. It results from different non-equilibrium interfacial structures.

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