Sub-micron Optoelectronic Properties of Polycrystalline Solar Cell Materials

2005 ◽  
Vol 865 ◽  
Author(s):  
S. Smith ◽  
R. Dhere ◽  
T. Gessert ◽  
P. Stradins ◽  
T. Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Surface Passivation ◽  
Near Field ◽  
Spectroscopic Properties ◽  
Optoelectronic Properties ◽  
Cdte Solar Cells ◽  
Cell Structures ◽  
Photo Response

AbstractGeneration, transport and collection of carriers in polycrystalline (PX) solar cells and their constituent materials are poorly understood, and significantly different than in their single-crystal counterparts. Recent theoretical and experimental results have put forth the expectation that grain boundaries in PX-solar cell materials such as CdTe and CuInGaSe2, either as-grown or after appropriate post-growth treatment, may have electronic properties which are advantageous to charge separation and solar cell operation[1-3]. However, a microscopic picture of the spatial variations in the optoelectronic properties of these materials is, for the most part, still lacking. The goal of the work reported here is to explore the optoelectronic and spectroscopic properties of grain-boundaries in these materials at the nanometer length-scale, via novel, high-resolution optical techniques. Towards this end, a significant enhancement in photo-response near grain boundaries in CdTe solar cells, consistent with models put forth in reference 2, was observed via near-field Optical Beam Induced Current (n-OBIC) [4]. A systematic μ-PL study of the effect of CdC12-treatment on recombination in CdTe/CdS solar cell structures of varying thickness directly examined the variation in optoelectronic properties at grain-boundaries in this material, revealing the grain-boundary and surface passivation effects of this important post-growth processing step. For comparison, we also studied the effects of SiNx post-growth treatment and annealing on the photo-response of PX-silicon solar cells using n-OBIC. These results and our most-recent n-OBIC measurements in CdTe and CuInGaSe2 solar cells are discussed.

Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

2021 ◽  
Author(s):  
Giuk Jeong ◽  
Seunghwan Ji ◽  
Ji Woon Choi ◽  
Gihun Jung ◽  
Byungha Shin
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Carrier Transport ◽  
Surface Passivation ◽  
Rear Surface ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Absorber ◽  
Post Deposition

Sb2Se3, a quasi-1D structured binary chalcogenide, has great potential as a solar cell light absorber owing to its anisotropic carrier transport and benign grain boundaries when the absorber layer is...

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

The Light Induced Changes in A-Si: H Materials and Solar Cells—Where We are Now

1997 ◽  
Vol 467 ◽  
Author(s):  
C. R. Wronski
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Paper Briefly ◽  
Cell Structures ◽  
Large Effort ◽  
Induced Changes ◽  
The Impact ◽  
Made In

ABSTRACTThe quest for understanding and especially controlling the reversible light induced changes in a-Si:H based materials has been ongoing for the last twenty years. This has been accompanied by a corresponding large effort in minimizing their effects on more efficient a-Si:H based solar cells. Despite the complexities in both the phenomena as well as the solar cells, progress has been made in both the scientific and technological arenas. This paper briefly reviews primarily studies on the characterization and reduction of the metastable changes in materials and the correlation of these changes with those in efficient solar cells. It will discuss the impact of studies on materials as well as the continuous advances made with “engineering” of solar cell structures on their improved stabilized performance.

Self-assembled propylammonium cations at grain boundaries and the film surface to improve the efficiency and stability of perovskite solar cells

2019 ◽  
Vol 7 (41) ◽  
pp. 23739-23746 ◽  
Author(s):  
Chengbin Fei ◽  
Meng Zhou ◽  
Jonathan Ogle ◽  
Detlef-M. Smilgies ◽  
Luisa Whittaker-Brooks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Perovskite Solar Cells ◽  
Film Surface ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Large Size ◽  
Moisture Stability

Large size cation (PA) was introduced into the grain boundary and film surface of the 3D perovskite to improve the solar cell efficiency and moisture stability.

Development of a-SiOx:H/a-Si1-xGex:H Tandem Solar Cell for Triple-Junction Solar Cell Applications

2012 ◽  
Vol 1426 ◽  
pp. 125-130
Author(s):  
Y.W. Tseng ◽  
Y.H. Lin ◽  
H.J. Hsu ◽  
C.H. Hsu ◽  
C.C. Tsai
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Oxide ◽  
Defect Density ◽  
Tandem Solar Cell ◽  
Tandem Solar Cells ◽  
Single Junction ◽  
Cell Efficiency ◽  
Photo Response ◽  
Hydrogenated Amorphous

ABSTRACTIn this work, the development of hydrogenated amorphous silicon oxide (a-SiOx:H) absorber, a-SiOx:H single-junction solar cells and a-SiOx:H/a-Si1-xGex:H tandem solar cells were presented. The oxygen content of the a-SiOx:H materials controlled by changing CO2-to-SiH4 flow ratio had significant influence on its opto-electrical property. As CO2/SiH4 increased from 0 to 2, the bandgap increased from 1.75 to 2.13 eV while the photo-conductivity decreased from 8.25×10-6 to 1.02×10-8 S/cm. Photo-response of over 105 can be obtained as the bandgap was approximately 1.90 eV. The performance of single-junction solar cells revealed a better efficiency can be obtained as the absorber bandgap was in the range of 1.83 to 1.90 eV. Further increase of the absorber bandgap may lead to the increase in bulk defect density which deteriorated the cell efficiency. Finally, a-SiOx:H/a-Si1-xGex:H tandem solar cell was fabricated with the absorber bandgap of 1.90 eV in the top cell. By matching the current between the component cells, the tandem cell efficiency of 7.38% has been achieved.

Recent Advances in A-Si Solar Cell Technology in Japan

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Kuwano
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Single Junction ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Recent Advances ◽  
Cell Structures ◽  
Cell Stability ◽  
Terminal Structure ◽  
Conversion Efficiencies

ABSTRACTRecent advances in a-Si solar cells in Japan are reviewed. Improvements in single-junction and multi-junction solar cells are described in three main points, namely, fabrication methods, materials, and cell structures. Recently, a conversion efficiency of 11.7% was obtained for a single-junction structure. For an a-Si/poly-Si stacked structure and an a-Si/(CdS/CdTe) 4 terminal structure, conversion efficiencies of more than 13% were achieved.Then recent advances in the prevention of the light induced degradation of a-Si solar cells is mentioned. Several methods which can improve the a-Si solar cell stability are described.Finally, the present status of the industrialization of a-Si solar cells and some of the latest applications are described together with their propects.

Stable Solar Cells Prepared from Dichlorosilane

1998 ◽  
Vol 507 ◽  
Author(s):  
Y. Yamamoto ◽  
W. Futako ◽  
K. Fukutani ◽  
M. Hagino ◽  
T. Sugawara ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Buffer Layers ◽  
Silicon Solar Cells ◽  
Hydrogen Dilution ◽  
Cell Structures ◽  
Reactive Plasma ◽  
Plasma Species

ABSTRACTAmorphous silicon films and solar cell i-layers were prepared from dichlorosilane(DCS) by ECR- and VHF-CVD. The hydrogen content, the chlorine content and the band gap could be controlled by varying argon and hydrogen dilution. The interaction of energetic and reactive plasma species with substrates and other previously deposited layers was studied. DCS, ECR-CVD causes darkening of TCO substrates even when buffer layers and/or doped layers were previously deposited by RF-CVD. Therefore n-i-p solar cell structures were prepared on NiCr and subsequent p-i-n solar cells were prepared with VHF-CVD which did not causeTCO reduction or other reactions in previously deposited amorphous layers. Preliminary results indicate that the VHF-CVD solar cells are at least as stable as standard amorphous silicon solar cells.

Nanoparticle-Based Contacts to CdTe

1998 ◽  
Vol 536 ◽  
Author(s):  
D. L. Schulz ◽  
R. Ribelin ◽  
C. J. Curtis ◽  
D. E. King ◽  
D. S. Ginley
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Valence State ◽  
Series Resistance ◽  
Open Circuit ◽  
Standard Methods ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

AbstractOur team has been investigating the use of particle-based contacts in CdTe solar cell technologies. Toward this end, particles of Cu-doped HgTe (Hg-Cu-Te) and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures. These metal telluride materials were characterized by standard methods. Hg-Cu-Te particles in graphite electrodag contacts produced CdTe solar cells with efficiencies above 12% and series resistance (Rse) of 6 Ω or less. Metathesis preparation of Cu(I) and Cu(II) tellurides (i.e., Cu2Te and CuTe, respectively) were attempted as a means of characterizing the valence state of Cu in the Hg-Cu-Te ink. For Sb-Te contacts to CdTe, open circuit voltages (Vocs) in excess of 800 mV were observed, however, efficiencies were limited to 9%; perhaps a consequence of the marked increase in the Rse (i.e., >20 Ω) in these non-graphite containing contacts. Acetylene black was mixed into the methanolic Sb-Te colloid as a means of reducing Rse, however, no improvement in device properties was observed.

Silicon Parallel Multilayer Thin Film Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
Martin A. Green ◽  
Alistair B. Sproul ◽  
Tom Puzzer ◽  
Guang Fu Zheng ◽  
Paul Basore ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Cell Structure ◽  
Energy Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Multilayer Thin Film ◽  
Solar Cell Structure ◽  
Cell Energy

AbstractA new silicon parallel multilayer solar cell structure has recently been reported which can give high solar cell energy conversion efficiency from low quality silicon material. Advantages of this structure are described as is recent characterization work which compares the properties of grain boundaries in experimental devices to those predicted by earlier calculations.

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