Orientation of Organic Semiconductor Films on Photoreactive Polyimide Films and its Influence on Field-Effect Transistor Characteristics

2005 ◽  
Vol 871 ◽  
Author(s):  
Hiroshi Kikuchi ◽  
Yuichiro Uchida ◽  
Yoshihide Fujisaki ◽  
Hiroto Sato ◽  
Hideo Fujikake ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Polyimide Film ◽  
Gate Insulator ◽  
Semiconductor Films ◽  
Organic Field Effect Transistors ◽  
Polyimide Films ◽  
Linearly Polarized ◽  
Photo Alignment ◽  
Effect Of Surface

AbstractIn this study, we have investigated the effect of surface treatment on the orientation and mobility of pentacene by using a photoreactive polyimide film to modify the gate-insulator surfaces of organic field effect transistors (OFETs). Surface modification includes a photoreactive polyimide film, presenting a passivated interface on which the semiconductor can grow. This polyimide film can control of the orientation of semiconductor by using linearly polarized deep UV (LPDUV) irradiation. Fabricated OFETs include stacked structures of Ta2O5 as the gate insulators and the photoreactive polyimide. Most of the characteristic parameters of the OFETs, such as carrier mobility and on/off current ration, have been improved by using the photo-alignment treatment achieved with LPDUV irradiation.

Correction to “Organic Field-Effect Transistors with Macroporous Semiconductor Films as High-Performance Humidity Sensors”

2017 ◽  
Vol 9 (37) ◽  
pp. 32411-32411 ◽  
Author(s):  
Shaohua Wu ◽  
Guiheng Wang ◽  
Zhan Xue ◽  
Feng Ge ◽  
Guobing Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Films ◽  
Organic Field Effect Transistors ◽  
Humidity Sensors

Ionic Impurities in Poly(vinyl alcohol) Gate Dielectrics and Hysteresis Effects in Organic Field Effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Martin Egginger ◽  
Mihai Irimia-Vladu ◽  
Reinhard Schwödiauer ◽  
Andreas Tanda ◽  
Siegfried Bauer ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Field Effect ◽  
Water Solubility ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Poly Vinyl Alcohol ◽  
Organic Field Effect Transistors ◽  
Electronic Circuits ◽  
Metal Insulator Metal ◽  
Ionic Impurities

AbstractPoly(vinyl alcohol) (PVA) is a water based dielectric often used as a coating layer in paper industry. Due to its water solubility PVA is also interesting as gate insulator in organic field effect transistors. Depending on the preparation of the PVA gate, transistors with and without hysteresis can be produced, with applications in organic electronic circuits or memory elements. In the production of PVA, a major side product is sodium acetate, an ionic salt not completely removed during industrial purification. Such ionic impurities likely influence the hysteresis in PVA based organic field effect transistors. While a hysteresis is desirable in memory elements it is unwanted in transistors for electronic circuits. Ways to prepare transistors with a desired transfer characteristic are described, for example by using electronic grade products directly from the purchaser of PVA, or by employing PVA purified by means of dialysis. Measurements are performed with metal-insulator-metal (MIM) structures and organic field effect transistors (OFETs), where Buckminsterfullerene C60 is employed as organic semiconductor.

Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

2007 ◽  
Vol 544-545 ◽  
pp. 753-756
Author(s):  
In Jae Back ◽  
Su Cheol Gong ◽  
Hun Seoung Lim ◽  
Ik Sub Shin ◽  
Seoung Woo Kuk ◽  
...  
Keyword(s):  
Active Layer ◽  
Glass Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Semiconductor Films ◽  
Insulation Property ◽  
Ito Glass ◽  
Lower Mobility

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

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