Synthesis of Silicon Nanowires and their Heterostructures by Thermal Chemical Vapor Deposition

2005 ◽  
Vol 879 ◽  
Author(s):  
Woo-Sung Jang ◽  
Seung Yong Bae ◽  
Jeunghee Park
Keyword(s):  
Silicon Nanowires ◽  
Chemical Vapor ◽  
Average Diameter ◽  
Growth Conditions ◽  
Nitride Layer ◽  
Growth Direction ◽  
Thermal Reaction ◽  
Si Nanowires ◽  
Oxide Mixture ◽  
Thermal Chemical Vapor Deposition

AbstractThe Si nanowires were synthesized using a novel catalytic thermal reaction under Ar flow. The average diameter is in the range of 50 ∼ 100 nm. They consist of defect-free single-crystalline cubic structure with the [111] growth direction. The thickness of amorphous oxide outer layers was controllable by growth conditions or surface treatment. In order to protect the oxidation, the Si nanowires were coated with boron nitride layer by the reaction of boron oxide mixture with NH3.

Optical properties of Si nanowires on a Si {111} surface

1999 ◽  
Vol 588 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda
Keyword(s):  
Optical Properties ◽  
Silicon Nanowires ◽  
Growth Conditions ◽  
Growth Direction ◽  
Structural Defects ◽  
Si Nanowires ◽  
Transmission Electron ◽  
Cathodoluminescence Spectroscopy ◽  
Si Nanostructures

AbstractWe have investigated optical properties of straight silicon nanowires by means of in-situ cathodoluminescence spectroscopy in a transmission electron microscope. The nanowires, grown on a Si{111} surface via vapor-liquid-solid growth mechanism, have no structural defects such as kink, and the diameter and growth direction are controlled by varying the growth conditions. We have found that the nanowires emit intense light. These lines have not been observed in other kinds of Si nanostructures such as porous Si.

Control of Morphology and Growth Direction of Gallium Nitride Nanostructures

2003 ◽  
Vol 789 ◽  
Author(s):  
Seung Yong Bae ◽  
Hee Won Seo ◽  
Jeunghee Park
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Large Scale ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Oxide Mixture ◽  
Temperature Range ◽  
Transmission Electron

ABSTRACTVarious shaped single-crystalline gallium nitride (GaN) nanostructures were produced by chemical vapor deposition method in the temperature range of 900–1200 °C. Scanning electron microscopy, transmission electron microscopy, electron diffraction, x-ray diffraction, electron energy loss spectroscopy, Raman spectroscopy, and photoluminescence were used to investigate the structural and optical properties of the GaN nanostructures. We controlled the GaN nanostructures by the catalyst and temperature. The cylindrical and triangular shaped nanowires were synthesized using iron and gold nanoparticles as catalysts, respectively, in the temperature range of 900 – 1000 °C. We synthesized the nanobelts, nanosaws, and porous nanowires using gallium source/ boron oxide mixture. When the temperature of source was 1100 °C, the nanobelts having a triangle tip were grown. At the temperature higher up to 1200 °C the nanosaws and porous nanowires were formed with a large scale. The cylindrical nanowires have random growth direction, while the triangular nanowires have uniform growth direction [010]. The growth direction of the nanobelts is perpendicular to the [010]. Interestingly, the nanosaws and porous nanowires exhibit the same growth direction [011]. The shift of Raman, XRD, and PL bands from those of bulk was correlated with the strains of the GaN nanostructures.

PATTERNED GROWTH OF Si NANOWIRES: A COMPARATIVE STUDY OF VLS AND SLS

2010 ◽  
Vol 09 (03) ◽  
pp. 145-150 ◽  
Author(s):  
M. F. ZIA ◽  
J. ALI ◽  
A. NAWEED ◽  
A. S. BHATTI ◽  
S. NASEEM
Keyword(s):  
Silicon Nanowires ◽  
External Source ◽  
Growth Conditions ◽  
Si Nanowires ◽  
Experimental Conditions ◽  
Patterned Growth ◽  
Gaas Substrates ◽  
Different Temperatures ◽  
Ar Gas ◽  
Solid Liquid

In this paper, we report morphology of silicon nanowires ( Si - NWs ) grown on various surfaces and patterned substrates using Vapor–Liquid–Solid (VLS) and Solid–Liquid–Solid (SLS) techniques. It is observed that the growth conditions are critical in controlling the dimensions of wires in both techniques. In addition to this, it is also demonstrated that Si - NWs are essentially different grown on Si or GaAs substrates. For growth of Si - NWs by VLS, Si powder was evaporated in a tube furnace under Ar flow while substrates were kept at different temperatures. In SLS, experimental conditions were identical except that no external source was used. Si - NWs thus grown showed dependence on the flow rate of Ar gas and the temperature of the substrate. Interestingly, instead of only radial nannowires (NWs), nanobelts and tapered NWs were also grown on patterned Au -catalyzed GaAs surface. In the end, the analysis on the basis of existing theories of NW growth is presented. Optical properties of Si - NWs are also briefly discussed.

Photocurrent of Undoped, n- and p-Type Si Nanowires Synthesized by Thermal Chemical Vapor Deposition

2006 ◽  
Vol 45 (5A) ◽  
pp. 4265-4269 ◽  
Author(s):  
Kyung-Hwan Kim ◽  
Kihyun Keem ◽  
Dong-Young Jeong ◽  
Byungdon Min ◽  
Kyoungah Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Nanowires ◽  
Thermal Chemical Vapor Deposition ◽  
P Type

scholarly journals Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Arancha Gómez-Martínez ◽  
Francisco Márquez ◽  
Eduardo Elizalde ◽  
Carmen Morant
Keyword(s):  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Carbon Microspheres ◽  
Vapor Liquid Solid ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Source ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

scholarly journals A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Tzuen-Wei Ho ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Silicon Nanowires ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Process Conditions ◽  
Vertical Alignment ◽  
Cooling Process ◽  
Surface Reflection ◽  
Vertically Aligned ◽  
Novel Method ◽  
High Degree

In this study we grew silicon nanowires (SiNWs) on Si (111) substrate by gold-catalyzed vapor liquid solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. SiNWs with 150–200 nm diameters were found to grow along the orientations of all〈111〉family, including the vertical and the inclined, on Si (111). The effects of various process conditions, including SiCl4concentration, SiCl4feeding temperature, H2annealing, and ramp cooling, on the crystal quality and growth orientation of SiNWs, were studied to optimize the growth conditions. Furthermore, a novel method was developed to reliably grow vertically aligned SiNWs on Si (111) utilizing the principle of liquid phase epitaxy (LPE). A ramp-cooling process was employed to slowly precipitate the epitaxial Si seeds on Si (111) after H2annealing at 650°C. Then, after heating in SiCl4/H2up to 850°C to grow SiNWs, almost 100% vertically aligned SiNWs could be achieved reproducibly. The high degree of vertical alignment of SiNWs is effective in reducing surface reflection of solar light with the reflectance decreasing with increasing the SiNWs length. The vertically aligned SiNWs have good potentials for solar cells and nano devices.

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 737 ◽  
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
H.W. Diao ◽  
Z.H. Hu ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Body ◽  
Si Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTPolymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440°C, using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 °C is needed. The diameters of Si nanowires range from 15 to 100 nm. The structure, morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Morphological Evolution of Silicon Nanowires Grown by Chemical Vapor Deposition

2007 ◽  
Vol 124-126 ◽  
pp. 1201-1204
Author(s):  
Dong Wook Kwak ◽  
Dae Hoon Kim ◽  
Hoon Young Cho ◽  
Woo Chul Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Morphological Evolution ◽  
Diffusion Mechanism ◽  
Chemical Vapor ◽  
Atomic Diffusion ◽  
Si Nanowires ◽  
Growth Pressure ◽  
Surface And Interface

Morphological evolution of Si nanowires (Si-NWs) grown on Si (001) substrates is explored. The Si-NWs are fabricated by nanoscale Au-Si island-catalyzed rapid thermal chemical vapor deposition. The Au-Si islands (10-50 nm in dia.) are formed by deposition of Au thin film (1.2-3.0 nm) at room temperature and followed by annealing at 700oC. The Si-NWs are grown by exposure them to a mixture of gasses of SiH4 and H2. We found a critical thickness of the Au film for Si-NW nucleation at a given growth condition. Also, we observed variation in the growth rate and the dimension of the NWs depending on the growth pressure and temperature. The resulting NWs are ~30-100nm in diameter and ~0.4-5.0μm in length. Most of the NWs were aligned along the <111> direction. The morphological and dimensional evolution of the Si-NWs is discussed in terms of kinetics (atomic diffusion mechanism) and energetics (surface and interface energies).

Formation of Ordered Si Nanowires Arrays on Si Substrate

2013 ◽  
Vol 854 ◽  
pp. 83-88 ◽  
Author(s):  
A.A. Evtukh ◽  
Anatoly Druzhinin ◽  
I. Ostrovskii ◽  
A. Kizjak ◽  
A. Grigoriev ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Kinetic Coefficient ◽  
Average Diameter ◽  
Si Nanowires ◽  
Si Substrate ◽  
Cvd Method ◽  
Good Accordance ◽  
Vertically Aligned ◽  
Kinetics Of ◽  
Axial Growth

The paper deals with investigation of silicon nanowires formation by LP CVD method on Si substrate using gold films as a mask. The average diameter of Si nanowires grown by LP CVD was about 60 nm. It was shown that using of Si-Au droplets as the mask allows to obtain vertically aligned silicon nanowires with average diameter of about 60 nm. The kinetics of radial and axial growth was investigated, the growth rates and kinetic coefficient of growth were calculated, which showed a good accordance to experimental data.

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