Development of HgCdTe for LWIR Imagers

1986 ◽  
Vol 90 ◽  
Author(s):  
Joseph L. Schmit
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Zone Melting ◽  
Phase Growth ◽  
Large Area ◽  
Long Wavelength ◽  
Atmospheric Window ◽  
Long Wavelength Infrared ◽  
Growth Methods

ABSTRACTThis paper provides a historical perspective on the emergency of HgCdTe as the material of choice for long wavelength infrared (LWIR) imagers. The need for devices which see room temperature objects through the atmospheric window actually drove the development of this material. The lack of elemental or compound semiconductors having the desired wavelength response forced the choice of the alloy semiconductor, HgCdTe. The development of this material in several countries and companies beginning in the late 1950's is traced. The crystal growth methods used to grow HgCdTe have included melt growth techniques such as Bridgman, zone-melting, quench-anneal and slushgrowth. The solution growth techniques include growth from HgTe-rich, Te-rich and Hg-rich solutions. Vapor phase growth has included evaporation, sputtering, molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). No perfect method has yet been developed, but several have provided material for the large area arrays needed for modern imagers.

Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

2002 ◽  
Vol 31 (7) ◽  
pp. 710-714 ◽  
Author(s):  
R. Haakenaasen ◽  
H. Steen ◽  
T. Lorentzen ◽  
L. Trosdahl-Iversen ◽  
A. D. Van Rheenen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

2006 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Nibir K. Dhar ◽  
Michael Carmody ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

scholarly journals Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

2020 ◽  
Vol 6 (36) ◽  
pp. eabb6500
Author(s):  
Cheng Guo ◽  
Yibin Hu ◽  
Gang Chen ◽  
Dacheng Wei ◽  
Libo Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Mobility ◽  
Charge Carriers ◽  
Terahertz Frequency ◽  
Large Area ◽  
Long Wavelength ◽  
Terahertz Band ◽  
High Anisotropy ◽  
Topological Semimetals ◽  
Wavelength Detection

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe2) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe2-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz0.5 are achieved at room temperature, validating the suitability of PdTe2-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.

Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

2003 ◽  
Vol 776 ◽  
Author(s):  
M. L. Hussein ◽  
W. Q. Ma ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Normal Incidence ◽  
Peak Shift ◽  
Infrared Region ◽  
Optical Absorption Coefficient ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Absorbance Peak ◽  
Long Wavelength Infrared

AbstractMultiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

Optically tunable long wavelength infrared quantum cascade laser operated at room temperature

2013 ◽  
Vol 102 (1) ◽  
pp. 011125 ◽  
Author(s):  
S. Suchalkin ◽  
S. Jung ◽  
R. Tober ◽  
M. A. Belkin ◽  
G. Belenky
Keyword(s):  
Quantum Cascade Laser ◽  
Room Temperature ◽  
Long Wavelength ◽  
Quantum Cascade ◽  
Long Wavelength Infrared

scholarly journals Review of polarity determination and control of GaN

2004 ◽  
Vol 9 ◽  
Author(s):  
M. Sumiya ◽  
S. Fuke
Keyword(s):  
Molecular Beam ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Hydride Vapor Phase Epitaxy ◽  
Nitride Semiconductors ◽  
Sapphire Substrates ◽  
Polarity Determination ◽  
And Control ◽  
Systematic Control ◽  
Growth Methods

Polarity issues affecting III-V nitride semiconductors are reviewed with respect to their determination and control. A set of conditions crucial to the polarity control of GaN is provided for each of the following growth techniques; molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and hydride vapor phase epitaxy (HVPE). Although GaN films might have been deposited by identical growth methods using the same buffer layer technologies, there is often a conflict between the resulting polarities achieved by different research groups. In this paper, we present the implications of the conditions used in each of the processes used for two-step metalorganic chemical vapor deposition (MOCVD), demonstrating systematic control of the polarity of GaN films on sapphire substrates. The potential for confusion in polarity control will be explained, taking into account the implications clarified in our studies. The correlation between the polarity and the growth conditions will be discussed in order to provide a mechanism for the determination and control of the crystal polarity during the growth of GaN films.

scholarly journals Large-area, lithography-free, narrow-band and highly directional thermal emitter

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19742-19750 ◽  
Author(s):  
Xingxing Liu ◽  
Zhiwei Li ◽  
Zhengji Wen ◽  
Mingfei Wu ◽  
Jialiang Lu ◽  
...  
Keyword(s):  
Narrow Band ◽  
Large Area ◽  
Long Wavelength ◽  
Spectrally Selective ◽  
Thermal Emitter ◽  
Long Wavelength Infrared

In this work, the authors propose and experimentally demonstrate a large-area long-wavelength infrared thermal emitter, which is spectrally selective, highly directional, and easily fabricated.

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