scholarly journals Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

2020 ◽  
Vol 6 (36) ◽  
pp. eabb6500
Author(s):  
Cheng Guo ◽  
Yibin Hu ◽  
Gang Chen ◽  
Dacheng Wei ◽  
Libo Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Mobility ◽  
Charge Carriers ◽  
Terahertz Frequency ◽  
Large Area ◽  
Long Wavelength ◽  
Terahertz Band ◽  
High Anisotropy ◽  
Topological Semimetals ◽  
Wavelength Detection

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe2) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe2-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz0.5 are achieved at room temperature, validating the suitability of PdTe2-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.

Development of HgCdTe for LWIR Imagers

1986 ◽  
Vol 90 ◽  
Author(s):  
Joseph L. Schmit
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Zone Melting ◽  
Phase Growth ◽  
Large Area ◽  
Long Wavelength ◽  
Atmospheric Window ◽  
Long Wavelength Infrared ◽  
Growth Methods

ABSTRACTThis paper provides a historical perspective on the emergency of HgCdTe as the material of choice for long wavelength infrared (LWIR) imagers. The need for devices which see room temperature objects through the atmospheric window actually drove the development of this material. The lack of elemental or compound semiconductors having the desired wavelength response forced the choice of the alloy semiconductor, HgCdTe. The development of this material in several countries and companies beginning in the late 1950's is traced. The crystal growth methods used to grow HgCdTe have included melt growth techniques such as Bridgman, zone-melting, quench-anneal and slushgrowth. The solution growth techniques include growth from HgTe-rich, Te-rich and Hg-rich solutions. Vapor phase growth has included evaporation, sputtering, molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). No perfect method has yet been developed, but several have provided material for the large area arrays needed for modern imagers.

scholarly journals Усиление терагерцовых электромагнитных волн в структуре с двумя слоями графена при протекании постоянного электрического тока: гидродинамическое приближение

2021 ◽  
Vol 55 (8) ◽  
pp. 649
Author(s):  
И.М. Моисеенко ◽  
В.В Попов ◽  
Д.В. Фатеев
Keyword(s):  
Electric Current ◽  
Room Temperature ◽  
Spatial Dispersion ◽  
Terahertz Wave ◽  
Charge Carriers ◽  
Amplification Efficiency ◽  
Terahertz Frequency ◽  
Terahertz Frequency Range ◽  
Direct Electric Current ◽  
Graphene Layers

The amplification of electromagnetic terahertz radiation in a structure with two layers of hydrodynamic graphene with a direct electric current is studied theoretically. The hydrodynamic conductivity of graphene is investigated. It is shown that the real part of the graphene conductivity can be negative in the terahertz frequency range at the drift velocities of charge carriers in graphene that are lower than the phase velocity of the electromagnetic wave. For small wavevectors of a terahertz wave incident on a graphene structure, the spatial dispersion insignificantly contributes to the hydrodynamic graphene conductivity. Because of this, the amplification efficiency does not depend on the direction of currents in each of the graphene layers. It is shown that graphene with direct electric current can be used to create THz amplifiers operating at room temperature.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide

2008 ◽  
Vol 44 (8) ◽  
pp. 525 ◽  
Author(s):  
Q.J. Wang ◽  
C. Pflügl ◽  
L. Diehl ◽  
F. Capasso ◽  
S. Furuta ◽  
...  
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Long Wavelength ◽  
Quantum Cascade ◽  
Cascade Lasers

Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

1989 ◽  
Vol 36 (9) ◽  
pp. 1929-1933 ◽  
Author(s):  
T. Serikawa ◽  
S. Shirai ◽  
A. Okamoto ◽  
S. Suyama
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Large Area

scholarly journals Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Yi-Dong Luo ◽  
Yuan-Hua Lin ◽  
Xuehui Zhang ◽  
Deping Liu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Double Exchange ◽  
Host Lattice ◽  
Charge Carriers ◽  
Fe Doping ◽  
Free Charge ◽  
Ferromagnetic Properties ◽  
Electrospinning Method ◽  
Fe Ions

Ni1−xFexOnanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

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