Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

1987 ◽  
Vol 97 ◽  
Author(s):  
Tadamasa Kimura ◽  
Hiroyuki Yamaguchi ◽  
Shigemi Yugo ◽  
Yoshio Adachi
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Infrared Absorption ◽  
Formation Process ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Infrared Absorption Spectroscopy ◽  
Energetic Ions ◽  
Mixed Layers ◽  
Post Implantation

ABSTRACTThe β-SiC formation process through post-implantation annealing of Si-C mixtures fabricated on Si by C-ion implantation at room temperature is studied by means of infrared absorption spectroscopy. It is shown that the formation of B-SiC from the Si-C mixtures is greatly enhanced by the subsequent irradiation of other energetic ions prior to the thermal annealing. The continuous amorphization of the Si-C mixed layers is considered to be the dominant cause for the enhancement of the B-SiC formation. The activation energy of the β-SiC formation process which is 5.3 eV without irradiation is reduced to 4.0 eV by the irradiation of 150 keV, 1 × 1017/cm2 Ar ions.

Ion Implantation Monitoring of GaAs Using Thermal Waves

1993 ◽  
Vol 316 ◽  
Author(s):  
R. Garcia ◽  
E. J. Jaquez ◽  
R.J. Culbertson ◽  
C. D'Acosta ◽  
C. Jasper
Keyword(s):  
Activation Energy ◽  
Thermal Properties ◽  
Ion Implantation ◽  
Diffusion Process ◽  
Thermal Wave ◽  
Room Temperature ◽  
Implantation Dose ◽  
Thermal Waves ◽  
Crystal Imperfections ◽  
Logarithmic Decay

ABSTRACTLaser modulated thermoreflectivity, also called thermal wave technology, has been used in recent years to monitor ion implantation dose by monitoring the damage due to implantation. The thermal properties which are affected by lattice perturbations and other crystal imperfections are tracked by this technique. A gauge capability study was performed on the Thermawave TP300 for monitoring ion implantation of GaAs wafers. The results are presented. In order to determine the sensitivity of the technique to changes in dose, a matrix of GaAs and Si wafers was measured. During this study a downward trend was observed in the repeatability of our results. It is shown that damage to a sample during implantation will relax to a certain degree at room temperature. This damage relaxation can take up to 80 hours at room temperature and can be observed using thermal waves. It is shown that “hot wafer decay” follows a logarithmic decay which is indicative of a diffusion process. At 180°C the decay lasts less than 1 minute which indicates that the defects causing this phenomenon have a low activation energy.

SYNCHROTRON RADIATION PHOTOEMISSION AND INFRARED SPECTROSCOPY STUDY OF ADSORPTION AND DECOMPOSITION OF DICHLOROSILANE ON Si(100)(2 × 1)

2002 ◽  
Vol 09 (02) ◽  
pp. 803-808 ◽  
Author(s):  
NOZOMU KAMAKURA ◽  
MASANORI SHINOHARA ◽  
HAYATO WATANABE ◽  
TAKAYUKI KUWANO ◽  
AKIO SEYAMA ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Synchrotron Radiation ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Infrared Absorption Spectroscopy ◽  
Spectroscopy Study ◽  
Stretching Vibration ◽  
Synchrotron Radiation Photoemission ◽  
Surface Comparison

We have used synchrotron radiation photoemission (SR-PES) and infrared absorption spectroscopy (IRAS) to investigate in situ the adsorption and decomposition of SiH 2 Cl 2 on Si (100)(2 × 1). Si 2p core level photoemission spectra and IRAS spectra in the Si–H stretching vibration region of the surface exposed to SiH 2 Cl 2 at room temperature have been measured to elucidate how SiH 2 Cl 2 adsorbs on the surface. PES data show that monochloride (SiCl) and hydride species ( SiH x) are generated upon dichlorosilane adsorption. IRAS data demonstrate that at initial stages of SiH 2 Cl 2 adsorption, the monohydride, the dihydride ( SiH 2) and the Cl-substituted hydride (–SiHCl) are populated on the surface. Comparison of PES and IRAS data indicates that Si–Cl bonds of the SiH 2 Cl 2 molecule are readily ruptured upon adsorption of dichlorosilane on the Si (100)(2 × 1).

Formation and Effects of Secondary Defects in Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn
Keyword(s):  
Activation Energy ◽  
Electron Microscope ◽  
Low Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Laser Annealing ◽  
Subsequent Annealing ◽  
Interface Migration ◽  
Kinetics Of ◽  
Ion Implanted

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Formation of Al-Based Intermetallic Compound under Ion Implantation at Lower Temperature

2007 ◽  
Vol 561-565 ◽  
pp. 1729-1732 ◽  
Author(s):  
Hisao Kinoshita ◽  
N. Sakaguch ◽  
S. Watanabe ◽  
H. Takahashil ◽  
Masayoshi Kawai ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Ion Implantation ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Nucleation Site ◽  
Enhanced Diffusion ◽  
Ion Accelerator ◽  
Preferential Nucleation ◽  
Phase Nucleation ◽  
Lower Temperature

The formation process of intermetallic compound under Ni+ion implantation into pure Al was studied at lower temperature below room temperature. Ion implantation was carried out using 250KeV ion accelerator. Cascade damage was introduced Ni+ions implantation at 223K without new phase nucleation. However, when Ni+ions were implanted at room temperature, the grown larger plate-like phases were observed during implantation up to 1x1017 Ni+/cm2. Ni concentration in Al matrix and newly formed phase were 0.3-0.5 and 8.5-13.3at%,respectively. It was identified that the formed phases were close to the ordered orthorhombic structure of Al3Ni type. It was also confirmed from observation with high resolution HVEM that these phases grew with continuous ion implantation. Thus it was clarified that cascades act as preferential nucleation site for intermetallic compound, and the phases nucleated at cascades coalesce in the growth process of each phase during continuous implantation through ion irradiation enhanced diffusion.

Post Implantation Treatment of Silicon Carbide-Based Sensors for Hydrogen Detection Properties Enhancement

2000 ◽  
Vol 647 ◽  
Author(s):  
I. C. Muntele ◽  
C. I. Muntele ◽  
D. Ila ◽  
R. L. Zimmerman ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Chemical Sensors ◽  
Room Temperature ◽  
Hydrogen Atmosphere ◽  
Chemical Processes ◽  
Hydrogen Detection ◽  
Type Silicon ◽  
Post Implantation ◽  
Palladium Ion

AbstractPalladium ion implantation was performed at energies of 35 keV, 50 keV and 100 keV, at both room temperature (RT) and 500 °C, on two identical sets of 6H, n-type silicon carbide samples. Then, one set of samples was subjected to a post-implantation sputtering process, in order to eliminate the substrate layer damaged by the palladium ions during implantation. Electrical and micro-Raman measurements have been performed on both sets of samples, aiming for a better understanding of the chemical processes that take place in the presence of hydrogen atmosphere in the chemical sensors prepared this way.

Infrared absorption spectroscopy of hydrogen and deuterium in CaO and SrO crystals

1989 ◽  
Vol 4 (1) ◽  
pp. 224-231 ◽  
Author(s):  
J. L. Park ◽  
R. González
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Absorption Spectra ◽  
Infrared Absorption ◽  
Diffusion Coefficients ◽  
Elevated Temperatures ◽  
Arrhenius Equation ◽  
Lithium Concentration ◽  
Infrared Absorption Spectroscopy ◽  
Infrared Absorption Spectra

Infrared absorption spectra have been used to characterize OH− and OD− ions at the surface and the bulk of undoped CaO, lithium doped CaO, and SrO crystals. Diffusion of deuterons from D2O vapor into these crystals was performed at elevated temperatures. Diffusion coefficients were obtained to be D (CaO) = 3 ⊠ 10−6 cm2/sec at 1773 K and D (SrO) = 4 ⊠ 10−7 cm2/sec at 1523 K. For the doped CaO crystal with lithium concentration of 310 ppm, the diffusion coefficient was measured to be D (CaO:Li) = 4 ⊠ 10−7 cm2/sec at 1473 K and the activation energy in the Arrhenius equation was estimated to be 1.7 eV.

PALS and TEM Study on Irradiation Defects of 12Cr-ODS Steels Induced by He/H Ions

2017 ◽  
Vol 373 ◽  
pp. 96-99 ◽  
Author(s):  
Lu Hui Han ◽  
Tao Fa ◽  
Ya Wen Zhao
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Fusion Reactor ◽  
Ion Irradiation ◽  
Ods Steels ◽  
The Difference ◽  
Induced Defects ◽  
Irradiation Induced Defects

The purpose of this study is to evaluate the irradiation defects of 12Cr-ODS steels induced by He/H ions, to provide basic understanding concerning development of fusion reactor components. Firstly, single He、H ion implantation and He/H ion co-implantation of 12Cr-ODS steels were performed at room temperature; and then SIMS were used to determine the He/H ion depth; finally, the irradiation induced defects were investigated by PALS and TEM. Characterization of the implanted samples with SIMS shows that He/H ions are mainly distributed at 4-6μm depth, consistent with the SRIM simulation. The PALS results show that the positron lifetime of H ions implanted samples increases slightly with increasing incident ions fluence, while for He and He/H ion implantation it is reversed. In addition, TEM results demonstrate that after irradiation, cavities are created in all samples, and He ion irradiation produce seriously larger damage compared to H ion. The positron lifetime results can be mainly ascribed to the difference of He and H ion interaction with defects.

XTEM study of phase transition in MeV ion-implanted InP

1988 ◽  
Vol 46 ◽  
pp. 796-797
Author(s):  
Fulin Xiong
Keyword(s):  
Phase Transition ◽  
Ion Implantation ◽  
Structural Changes ◽  
Ion Irradiation ◽  
Device Fabrication ◽  
Cross Sectional ◽  
3 Dimensional ◽  
Transmission Electron ◽  
Post Implantation ◽  
Subsequent Thermal Annealing

MeV ion implantation into III-V compound semiconductors has attracted great attention in recent years because of its high potential for 3-dimensional device fabrication technology. However, a thorough understanding of associated physical processes involved is crucial before it can be universally applied. Our study on this subject with InP using cross sectional and high resolution transmission electron microscopy (XTEM, HRTEM) reveals clearly the structural changes occurring during MeV-ion-implantation and subsequent thermal annealing. It has lead to a better understanding of the mechanism of phase transition in InP under MeV ion irradiation.Samples of n-type InP(lOO) single crystalline wafers were implanted with 5 MeV-N-ions in room temperature with doses ranging from 1014 to 1016/cm2. Post-implantation annealing was carried out in a graphite strip heater at 500 C with ambient H2 flow.Fig. 1 shows a typical XTEM view of an implanted sample at a dose of 1 x 1016/cm2. A wide implanted layer is buried at a maximum depth of 4μm with a slightly damaged top surface. The buried layer appears as a highly disordered crystalline structure when the sample was annealed, whereas it is amorphous in an as-implanted sample.

scholarly journals In-Situ and Ion Implantation Nitrogen Doping on Near Stoichiometric a-SiC:H Films

2004 ◽  
Vol 1 (2) ◽  
pp. 26-30
Author(s):  
A. R. Oliveira ◽  
M. N. P. Carreño
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Ion Implantation ◽  
Nitrogen Doping ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Implantation Technique ◽  
Electrical Conductivities

In this work we study the nitrogen n-type electrical doping of a-Si0.5C0.5:H films obtained by plasma enhanced chemical vapor deposition (PECVD) utilizing and comparing two doping techniques: in-situ (during the material growth) and ion implantation. The in-situ doped a-SiC:H films were obtained adding different amounts of N2 to the precursor gas mixture. For ion implantation four different nitrogen implanted concentrations were studied (between 1018 and 1021 atoms/ cm3) using multiple energies and doses to define a homogeneously doped layer. The doping experiments are carried out on a-SiC:H samples that present different structural order. The results show that high levels of electrical conductivity can be obtained with ion implantation technique. For in-situ technique the doping effect is also observed but must be improved in order to attain higher electrical conductivities. In the best case the room temperature dark conductivity for the sample implanted with 1021 nitrogens/cm3 was ~10-7 (Ω.cm)-1 and the activation energy was 0.2 eV. For in-situ doping the electrical dark conductivity reached values near 10-10 (Ω.cm)-1 at high temperatures and the activation energy was ~0.6 eV. Despite of the apparent low values of the electrical conductivity, these results are promising because we are dealing with a wide gap material and the doping processes are still not optimized.

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