Scanning Probe Microscopy of Thin Films

MRS Bulletin ◽  
1993 ◽  
Vol 18 (1) ◽  
pp. 41-49 ◽  
Author(s):  
Steven M. Hues ◽  
Richard J. Colton ◽  
Ernst Meyer ◽  
Hans-Joachim Güntherodt
Keyword(s):  
Imaging Techniques ◽  
Ambient Pressure ◽  
Surface Force ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Probe Microscopy ◽  
Force Microscopy ◽  
Cryogenic Liquids ◽  
Frictional Forces

Atomic force microscopy (AFM) was invented in 1986 by Binnig, Quate, and Gerber as “a new type of microscope capable of investigating surfaces of insulators on an atomic scale.” Stemming from developments in scanning tunneling microscopy (STM), it became possible to image insulators, organic and biological molecules, salts, glasses, and metal oxides — some under a variety of conditions, e.g., ambient pressure, in aqueous or cryogenic liquids, etc. In 1987, Mate and co-workers introduced a new application for AFM where atomic-scale frictional forces could be measured. Likewise, in 1989, Burnham and Colton used the AFM to measure the surface forces and nano-mechanical properties of materials. Today, there are many examples of using AFM as a high-resolution profilometer, surface force probe, and nanoindentor. Several new imaging techniques have been introduced; each depending on the type of force measured, e.g., magnetic, electrostatic, and capacitative. Because of the diverse nature of the field and instrumentation, the names “scanned probe microscopy” and “XFM” (where X stands for the force being measured, e.g., MFM is magnetic force microscopy) have been adopted.

Heterogeneous Oxidation and Precipitation of Aqueous Mn(II) at the Goethite Surface: A SPM Study

1998 ◽  
Vol 4 (S2) ◽  
pp. 600-601
Author(s):  
John Rakovan ◽  
F. Hochella Michael
Keyword(s):  
Lateral Force ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Mineral Surfaces ◽  
Tunneling Microscopy ◽  
Heterogeneous Oxidation ◽  
Force Microscopy ◽  
Solution Interface ◽  
Atomic Force

Since its invention inl982 scanning probe microscopy (SPM) has become an important analytical tool in every branch of physical science. The two most widely used types of SPM are atomic force Microscopy (AFM) and scanning tunneling microscopy (STM). Both AFM and STM allow measurement of the microtopography of a surface down to the atomic scale. Many spin-off applications such as lateral force and magnetic force allow measurement of a variety of the physical properties of a surface while imaging its microtopography. SPM can be done in both air and liquid and hence can be used to observe the interactions that take place at a solid-solution interface.SPM has been used in mineralogy and geochemistry since 1989. Here as in other applications the great strength of SPM is in the characterization of the heterogeneous nature of mineral surfaces and the ability to observe many geochemical processes in real time.

scholarly journals Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films

2016 ◽  
Vol 2 (7) ◽  
pp. e1600209 ◽  
Author(s):  
Xuewen Wang ◽  
Xuexia He ◽  
Hongfei Zhu ◽  
Linfeng Sun ◽  
Wei Fu ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
High Performance ◽  
Piezoelectric Materials ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Microelectromechanical Devices ◽  
Cds Thin Films ◽  
Piezoelectric Force Microscopy

Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d33) up to 33 pm·V−1 was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices.

scholarly journals Atomic Resolution with the Atomic Force Microscope

1995 ◽  
Vol 3 (4) ◽  
pp. 6-7
Author(s):  
Stephen W. Carmichael
Keyword(s):  
Atomic Force Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Atomic Force Microscope ◽  
Recent Article ◽  
Atomic Scale ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force

For biologic studies, atomic force microscopy (AFM) has been prevailing over scanning tunneling microscopy (STM) because it has the capability of imaging non-conducting biologic specimens. However, STM generally gives better resolution than AFM, and we're talking about resolution on the atomic scale. In a recent article, Franz Giessibl (Atomic resolution of the silicon (111)- (7X7) surface by atomic force microscopy, Science 267:68-71, 1995) has demonstrated that atoms can be imaged by AFM.

Industrial Applications of Scanning Probe Microscopy

1998 ◽  
Vol 4 (S2) ◽  
pp. 522-523
Author(s):  
S. Magonov
Keyword(s):  
Scanning Probe Microscopy ◽  
High Vacuum ◽  
Sample Surface ◽  
Industrial Applications ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Probe Microscopy ◽  
Force Microscopy

The evolution of scanning tunneling microscopy (STM) into atomic force microscopy (AFM) have led to a family of scanning probe techniques which are widely applied in fundamental research and in industry. Visualization of the atomic- and molecular-scale structures and the possibility of modifying these structures using a sharp probe were demonstrated with the techniques on many materials. These unique capabilities initiated the further development of AFM and related methods generalized as scanning probe microscopy (SPM). The first STM experiments were performed in the clean conditions of ultra-high vacuum and on well-defined conducting or semi-conducting surfaces. These conditions restrict SPM applications to the real world that requires ambient-condition operation on the samples, many of which are insulators. AFM, which is based on the detection of forces between a tiny cantilever carrying a sharp tip and a sample surface, was introduced to satisfy these requirements. High lateral resolution and unique vertical resolution (angstrom scale) are essential AFM features.

scholarly journals Electron transfer between anatase TiO2 and an O2 molecule directly observed by atomic force microscopy

2017 ◽  
Vol 114 (13) ◽  
pp. E2556-E2562 ◽  
Author(s):  
Martin Setvin ◽  
Jan Hulva ◽  
Gareth S. Parkinson ◽  
Michael Schmid ◽  
Ulrike Diebold
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Transfer ◽  
Photoelectron Spectroscopy ◽  
Uv Light ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force

Activation of molecular oxygen is a key step in converting fuels into energy, but there is precious little experimental insight into how the process proceeds at the atomic scale. Here, we show that a combined atomic force microscopy/scanning tunneling microscopy (AFM/STM) experiment can both distinguish neutral O2 molecules in the triplet state from negatively charged (O2)− radicals and charge and discharge the molecules at will. By measuring the chemical forces above the different species adsorbed on an anatase TiO2 surface, we show that the tip-generated (O2)− radicals are identical to those created when (i) an O2 molecule accepts an electron from a near-surface dopant or (ii) when a photo-generated electron is transferred following irradiation of the anatase sample with UV light. Kelvin probe spectroscopy measurements indicate that electron transfer between the TiO2 and the adsorbed molecules is governed by competition between electron affinity of the physisorbed (triplet) O2 and band bending induced by the (O2)− radicals. Temperature–programmed desorption and X-ray photoelectron spectroscopy data provide information about thermal stability of the species, and confirm the chemical identification inferred from AFM/STM.

scholarly journals Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhang Jing ◽  
Li Rongbin ◽  
Wang Xianghu ◽  
Wei Xicheng
Keyword(s):  
Grain Boundaries ◽  
Measurement Techniques ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Average Size

The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM), secondary ion mass spectroscopy (SIMS), and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The localI-Vcharacteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

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