Optical Properties of GaNAs Grown by MBE

Author(s):  
G. Pozina ◽  
I. G. Ivanov ◽  
B. Monemar ◽  
J.V. Thordson ◽  
T.G. Andersson

Optical properties of the GaNxAs1−x layers grown on (001) GaAs substrates by molecular beam epitaxy have been studied. The samples can be classified into three categories with respect to the concentration of N, as determined by x-ray diffraction and secondary-ion mass spectrometry: (i) with doping nitrogen concentration, (ii) with average content of N less than 30 %, and (iii) with x close to 100 %. From optical measurements of photoluminescence and Raman scattering, combined with analysis of x-ray diffraction spectra, different phases are observed in the GaNxAs1−x layers: GaAs, GaN and the solid ternary solution GaNxAs1−x. We have estimated the fundamental band-gap energy in the GaNxAs1−x alloy with low nitrogen concentration (up to x = 0.04) from absorption measurements, and in GaNxAs1−x with low arsenic concentration (up to 1−x = 0.04) - from photoluminescence spectra. An analysis of the dependence of the experimental values of the GaNxAs1−x band-gap energy on the nitrogen composition indicates a constant bowing parameter b as large as b = -18 eV.

2017 ◽  
Vol 889 ◽  
pp. 234-238
Author(s):  
Mohd Hasmizam Razali ◽  
Nur Arifah Ismail ◽  
Mahani Yusoff

Pure and F doped TiO2 nanotubes was synthesized using simple hydrothermal method. The hydrothermal was conducted using teflon-liner autoclave and maintained at 150oC for 24 hours. The characterization of synthesised product was carried out using x-ray diffraction (XRD), transmission electron microscope (TEM), energy dispersive of x-ray spectroscopy (EDX) and ultra violet – visible light diffuse reflectance spectroscopy (UV-Vis DRS) for band gap measurements. XRD patterns indicated that anatase TiO2 phase was remained after F doping suggested that fluorine was highly dispersed into TiO2 by substituted with O in the TiO2 lattice to formed TiO2-xFx solid solution. Morphology investigation using TEM found out small diameter of nanotubes structure within 8 – 10 nm of pure and F doped TiO2 nanotubes. The band gap energy (Eg) of both nanotubes samples were almost similar proposing that F doping does not modify the band gap energy.


Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Ho Soon Min ◽  
Shanthi Monohorn ◽  
Saravanan Nagalingam

PbSe thin films are prepared by chemical bath deposition technique over microscope glass substrates from an aqueous acidic bath containing lead nitrate and sodium selenate. The influence of bath temperature on the properties of PbSe film is investigated. The X-ray diffraction analysis showed the deposited films were polycrystalline and having the (111) orientation. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.0 to 1.3 eV as the bath temperature was increased from 40 to 80°C. The films deposited at 80°C showed good crystallinity and uniformly distributed over the surface of substrate with larger grain sizes. Therefore, the optimum bath temperature is 80°C. Keywords: Lead selenide; X-ray diffraction; Band gap energy; Chemical bath deposition; Thin films DOI: 10.3126/kuset.v6i2.4021Kathmandu University Journal of Science, Engineering and Technology Vol.6. No II, November, 2010, pp.126-132


Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 589 ◽  
Author(s):  
Lin ◽  
Guo ◽  
Dai ◽  
Lin ◽  
Hsu

In this work, we used the chemical vapor transport (CVT) method to grow PbI2 crystals using iodine as a self-transporting agent. The crystals’ structure, composition, and uniformity were confirmed by X-ray diffraction (XRD) and electron probe microanalysis (EPMA) measurements. We investigated the band gap energy using absorption spectroscopy measurements. Furthermore, we explored the temperature dependence of the band gap energy, which shifts from 2.346 eV at 300 K to 2.487 eV at 20 K, and extracted the temperature coefficients. A prototype photodetector with a lateral metal–semiconductor–metal (MSM) configuration was fabricated to evaluate its photoelectric properties using a photoconductivity spectrum (PC) and persistent photoconductivity (PPC) experiments. The resonance-like PC peak indicates the excitonic transition in absorption. The photoresponse ILight/IDark-1 is up to 200%.


2013 ◽  
Vol 772 ◽  
pp. 365-370 ◽  
Author(s):  
Mohd Hasmizam Razali ◽  
M.N. Ahmad-Fauzi ◽  
Abdul Rahman Mohamed ◽  
Srimala Sreekantan

Titanium dioxide (TiO2) nanoparticles were successfully synthesised by hydrothermal method using TiO2 microparticle powder (Merck) as precursor. TiO2 microparticles powder (~160 nm) was mixed with 10 M NaOH and treated hydrothermally at 150 °C and 2 MPa pressure in autoclave for 24 hours. After hydrothermal reaction was completed, the sample was washed, dried and heated at 500 °C for 2 hours to produce TiO2 nanoparticles. The synthesised nanoparticles were characterized using field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and raman spectroscopy. UV-Vis DRS was used to determine the band gap energy. Field emissions and transmissions electron microscopy images revealed that nanoparticles obtained was about 14 nm. X-ray diffraction patterns showed that TiO2 nanoparticles were anatase phase (tetragonal). The band gap energy of TiO2 nanoparticles was determined to be 3.32 eV.


1996 ◽  
Vol 60 (402) ◽  
pp. 759-766 ◽  
Author(s):  
Laurent Van Haverbeke ◽  
Renaud Vochten ◽  
Karel Van Springel

AbstractChernikovite and meta-ankoleite were synthesized with a relatively high crystallinity and the compounds were identified by means of chemical analysis and X-ray diffraction. The infrared spectra were recorded and the bands assigned. From the luminescence spectra, the band-gap energy for both compounds was calculated as 2.35 eV, indicating that they must be considered as insulators. The dependence of the solubilities of these compounds on the acidity of the solution was studied, and the dominant ionic species were determined. The pKsp values of chernikovite and meta-ankoleite were found to be 22.73±0.24 and 24.30±0.81 respectively.


2019 ◽  
Vol 290 ◽  
pp. 323-328 ◽  
Author(s):  
Nor Fadilah Chayed ◽  
Norlida Kamarulzaman ◽  
Nurhanna Badar ◽  
Kelimah Elong

Doping of the materials with other metals or transition metals will modify the properties of the nanomaterials. In this work, MgO and Cu doped MgO which are Mg0.95Cu0.05O and Mg0.90Cu0.10O nanomaterials are synthesized using a self-propagating combustion method. The samples are annealed at 900 °C for 24 hours. The phase and purity of the synthesized samples are studied using X-Ray Diffraction (XRD) and the result revealed that the samples are pure and single phase. The morphology and crystallite size of the pure samples are examined using Field Emission Scanning Electron Microscope (FESEM). The result shows polyhedral morphology with agglomeration of crystallite and average crystallite size of the samples is between 40 to 210 nm. The band gap obtained for MgO nanostructures is 6.38 eV which is lower than bulk MgO of 7.8 eV. The presence of Cu causes the narrowing the band gap energy of Mg0.95Cu0.05O and Mg0.90Cu0.10O samples to 4.28 eV and 3.35 eV respectively.


2021 ◽  
Vol 26 (4) ◽  
Author(s):  
Vanja Fontenele Nunes ◽  
Francisco Marcone Lima ◽  
Edwalder Silva Teixeira ◽  
Paulo Herbert França Maia Júnior ◽  
Ana Fabíola Leite Almeida ◽  
...  

ABSTRACT Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density.


2012 ◽  
Vol 545 ◽  
pp. 161-164
Author(s):  
Rusdi Roshidah ◽  
Abd Rahman Azilah ◽  
Norlida Kamarulzaman

ZnO is known as an inorganic material that has a variety of morphologies. The morphologies of the ZnO are much influenced by the synthesis route. In this work, two ZnO nanomaterials were prepared by the sol-gel route and the effect of detergent on the morphology and optical band gap of ZnO materials were investigated. The synthesized ZnO materials were characterized using Simultaneous Thermogravimetric Analyzer (STA), X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FESEM). The UV-Vis spectrophotometer is used to determine the optical band gap. The results show that the presence of detergent affected the morphology of the ZnO from nanorods to nano-flakes. The band gap energy of the ZnO were also reduced from 3.14 ev to 2.98 eV from the nanorod to the nanoflakes.


2019 ◽  
Vol 2019 ◽  
pp. 1-10 ◽  
Author(s):  
Asla A. AL-Zahrani ◽  
Zulkarnain Zainal ◽  
Zainal Abidin Talib ◽  
Hong Ngee Lim ◽  
Laimy Mohd Fudzi ◽  
...  

One of the most effective strategies to improve the photoconversion efficiency in the photoelectrochemical cell is by using an assembly of heterostructures. To do so, a simple and inexpensive method, that is successive ionic layer adsorption and reaction (SILAR), is used to deposit the narrow band gap energy semiconductor Bi2S3 on ZnO nanorod arrays (NRAs) at different SILAR cycles. The obtained binary heterostructure thin films were characterized by using X-ray diffraction (XRD), UV-Vis Spectroscopy, field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM), and linear sweep voltammogram (LSV) to prove the crystal structure, optical properties, band gap energy, morphological structure, composition of elements, and electrical properties. The XRD revealed that ZnO NRAs possessed a single wurtzite crystal structure while Bi2S3 possessed an orthorhombic crystal structure. The as-fabricated Bi2S3/ZnO heterostructure exhibited enhanced visible light absorption and charge separation efficiency of photoinduced electron-hole pairs. The band gap energy of binary heterostructure Bi2S3/ZnO NRAs is 3.11, 3.00, 2.33, 1.96, and 1.89 eV at 3, 5, 7, 9, and 11 SILAR cycles, respectively, confirming the substantial improvement of ZnO NRA optical properties. The highest photocurrent density has been achieved by 1.92 mA/cm2 of Bi2S3/ZnO NRAs fabricated at 7 cycles, exhibiting sixfold enhancement compared to that of intrinsic ZnO NRAs (0.336 mA/cm2). This impressive enhancement was ascribed to the significant improvement in morphological structure, crystallinity, and optical properties of heterostructure photoanodes. Significant improvement was achieved in the photoelectrochemical cell (PEC) performance attributed to the fast separation, low recombination rate, and low impedance of the photoinduced electron-hole pairs as shown throughout the electrochemical impedance spectra.


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