scholarly journals High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

2000 ◽  
Vol 5 (S1) ◽  
pp. 35-41 ◽  
Author(s):  
J.D. Brown ◽  
J. Matthews ◽  
S. Harney ◽  
J. Boney ◽  
J.F. Schetzina ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Spectral Region ◽  
Room Temperature ◽  
High Sensitivity ◽  
Digital Cameras ◽  
Photodiode Arrays ◽  
Visible Blind ◽  
Backside Illuminated

Visible-blind UV cameras based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Output from the UV cameras were recorded at room temperature at frame rates of 30−240 Hz. These new visible-blind digital cameras are sensitive to radiation from 285−365 nm in the UV spectral region.

High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

1999 ◽  
Vol 595 ◽  
Author(s):  
J.D. Brown ◽  
J. Matthews ◽  
S. Harney ◽  
J. Boney ◽  
J.F. Schetzina ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Spectral Region ◽  
Room Temperature ◽  
High Sensitivity ◽  
Digital Cameras ◽  
Photodiode Arrays ◽  
Visible Blind ◽  
Backside Illuminated

AbstractVisible-blind UV cameras based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Output from the UV cameras were recorded at room temperature at frame rates of 30-240 Hz. These new visible-blind digital cameras are sensitive to radiation from 285-365 nm in the UV spectral region.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

UV-assisted High-sensitivity Room-temperature Pd-gated HEMT NO2Gas Sensor

2021 ◽  
Author(s):  
Chong Xing ◽  
Dongcheng Xie ◽  
Haochen Zhang ◽  
Kang Song ◽  
Lei Yang ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Sensitivity

scholarly journals High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco
Keyword(s):  
Integrated Circuits ◽  
Fundamental Mode ◽  
High Performance ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Power Splitting ◽  
Excess Loss ◽  
Power Splitters ◽  
On Chip ◽  
Efficient Power

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).

scholarly journals Fabrication of Graphene Nanomesh FET Terahertz Detector

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 641
Author(s):  
Yuan Zhai ◽  
Yi Xiang ◽  
Weiqing Yuan ◽  
Gang Chen ◽  
Jinliang Shi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Coupling Efficiency ◽  
High Sensitivity ◽  
Fabrication Process ◽  
Monolayer Graphene ◽  
Terahertz Waves ◽  
Wet Process ◽  
Graphene Nanomesh ◽  
Thz Detector

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.

scholarly journals A Self-Powered Nanogenerator for the Electrical Protection of Integrated Circuits from Trace Amounts of Liquid

2019 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhuang Hui ◽  
Ming Xiao ◽  
Daozhi Shen ◽  
Jiayun Feng ◽  
Peng Peng ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Printed Circuit Board ◽  
Short Circuit ◽  
High Sensitivity ◽  
Short Circuit Current ◽  
Fast Response ◽  
Open Circuit ◽  
Circuit Board ◽  
Self Powered

Abstract With the increase in the use of electronic devices in many different environments, a need has arisen for an easily implemented method for the rapid, sensitive detection of liquids in the vicinity of electronic components. In this work, a high-performance power generator that combines carbon nanoparticles and TiO2 nanowires has been fabricated by sequential electrophoretic deposition (EPD). The open-circuit voltage and short-circuit current of a single generator are found to exceed 0.7 V and 100 μA when 6 μL of water was applied. The generator is also found to have a stable and reproducible response to other liquids. An output voltage of 0.3 V was obtained after 244, 876, 931, and 184 μs, on exposure of the generator to 6 μL of water, ethanol, acetone, and methanol, respectively. The fast response time and high sensitivity to liquids show that the device has great potential for the detection of small quantities of liquid. In addition, the simple easily implemented sequential EPD method ensures the high mechanical strength of the device. This compact, reliable device provides a new method for the sensitive, rapid detection of extraneous liquids before they can impact the performance of electronic circuits, particularly those on printed circuit board.

Evaluation Humidity Sensing Properties of Graphene/HS-TiO2 Nanocomposites

2021 ◽  
Vol 21 (10) ◽  
pp. 5143-5149
Author(s):  
Zhen Zhu ◽  
Wang-De Lin
Keyword(s):  
Room Temperature ◽  
Response Times ◽  
Sol Gel ◽  
Hollow Spheres ◽  
High Sensitivity ◽  
Humidity Sensing ◽  
X Ray ◽  
Transmission Electron ◽  
Recovery Times ◽  
Relative Humidity Range

This paper reports on a nanocomposite synthesized by sol–gel procedure comprising graphene sheets with hollow spheres of titanium dioxide (G/HS-TiO2) with varying weight percentages of graphene for the purpose of humidity sensors. The surface morphology of the nanocomposite was characterized using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The structural properties were examined using X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FTIR). The response to 12–80% RH at room temperature exhibited sensitivity (S = 135). However, the relative humidity range of 12–90% at room temperature exhibited higher sensitivity (S = 557). Sensors fabricated using the proposed nanocomposite exhibited high sensitivity to humidity, high stability, rapid response times, and rapid recovery times with hysteresis error of less than 1.79%. These results demonstrate the outstanding potential of his material for the monitoring of atmospheric humidity. This study also sought to elucidate the mechanisms underlying humidity sensing performance.

Porous ZnO/rGO Nanosheet‐Based NO 2 Gas Sensor with High Sensitivity and ppb‐Level Detection Limit at Room Temperature

2021 ◽  
pp. 2101511
Author(s):  
Ziwei Chen ◽  
Haojie Guo ◽  
Fusheng Zhang ◽  
Xiaowen Li ◽  
Jiabing Yu ◽  
...  
Keyword(s):  
Detection Limit ◽  
Gas Sensor ◽  
Room Temperature ◽  
High Sensitivity
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