Impact of HKMG and FDSOI FeFET drain current variation in processing-in-memory architectures

2021 ◽  
Author(s):  
Nathan Eli Miller ◽  
Zheng Wang ◽  
Saurabh Dash ◽  
Asif Islam Khan ◽  
Saibal Mukhopadhyay
Keyword(s):  
Drain Current ◽  
Current Variation ◽  
Memory Architectures

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

Measurement of the MOSFET drain current variation under high gate voltage

2009 ◽  
Vol 53 (3) ◽  
pp. 314-319 ◽  
Author(s):  
Kazuo Terada ◽  
Tetsuo Chagawa ◽  
Jianyu Xiang ◽  
Katsuhiro Tsuji ◽  
Takaaki Tsunomura ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Drain Current ◽  
Current Variation

Measurement of the MOSFET drain current variation under high gate voltage

2008 ◽  
Author(s):  
Tetsuo Chagawa ◽  
Kazuo Terada ◽  
Jianyu Xiang ◽  
Katsuhiro Tsuji ◽  
Takaaki Tsunomura ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Drain Current ◽  
Current Variation

scholarly journals Probabilistic Modelling of Variation in FGMOSFET

2017 ◽  
Vol 11 (1) ◽  
pp. 50-62
Author(s):  
Rawid Banchuin ◽  
Roungsan Chaisricharoen
Keyword(s):  
Goodness Of Fit ◽  
Drain Current ◽  
Probabilistic Modelling ◽  
Goodness Of Fit Test ◽  
Analysis And Design ◽  
Trade Offs ◽  
Saturation Region ◽  
Current Variation ◽  
The Impact ◽  
Statistical Variability

The analytical probabilistic modelling of random variation in the drain current of a Floating-Gate MOSFET (FGMOSFET) induced by manufacturing process variations has been performed. Both triode and saturation region operated FGMOSFETs have been considered. The results have been found to be very efficient since they can accurately fit the probabilistic distributions of normalized random drain current variations of the candidate triode and saturation FGMOSFETs obtained using the 0.25μm level BSIM3v3 based Monte-Carlo SPICE simulations, where the variation of the saturation FGMOSFET has been found to be more severe. These results also satisfy the goodness of fit test at a very high level of confidence and more accurately than the results of the previous probabilistic modelling attempts. Using our results, many statistical parameters, probabilities and the objective functions, which are useful in statistical/variability aware analysis and design involving FGMOSFETs can be formulated. The impact of drain current variation upon the design trade-offs can be studied. It has been found that the occurrence of the drain current variation is absolutely certain. Moreover, the analytical probabilistic modelling and computationally efficient statistical/ variability aware simulation of FGMOSFET based circuits can also be performed. 

scholarly journals Tfet Biosensor Simulation and Analysis for Various Biomolecules

2021 ◽  
Author(s):  
P Vimala ◽  
Likith Krishna L ◽  
Sharma SS ◽  
Rakshanda Ainapur ◽  
Swetha RH
Keyword(s):  
Dielectric Constant ◽  
Energy Band Diagram ◽  
Drain Current ◽  
Dielectric Constants ◽  
Device Structure ◽  
Current Variation ◽  
Effect Transistor ◽  
The Difference ◽  
And Performance ◽  
Silvaco Atlas

Abstract This paper investigates the simulation and performance of Tunnel field effect transistor (TFET) with a nanocavity in it, which can be used for bio sensing application. The entire simulation is done using the tool Silvaco Atlas TCAD. This paper mainly aims in comparing the different parameters for few biomolecules which has different dielectric constant values, namely Streptavidin, Biotin, APTES, Cellulose and DNA. The device structure here consists of a nanocavity near the source end, which is used to place these biomolecules and hence observe the variation of the Drain current v/s Gate voltage characteristic graph, these biomolecules that are having unique dielectric constants are placed within this cavity and these graphs are observed. The energy band diagram of this device is obtained; on top of this various other parameters namely Surface Potential, Electric field are observed for the above-mentioned Biomolecules. The Length of the cavity of the biosensor is also varied to observe the difference, in addition to this Ion (ON current) variation is plotted for the change in the dielectric constant of the biomolecule.

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