scholarly journals Tfet Biosensor Simulation and Analysis for Various Biomolecules

2021 ◽  
Author(s):  
P Vimala ◽  
Likith Krishna L ◽  
Sharma SS ◽  
Rakshanda Ainapur ◽  
Swetha RH
Keyword(s):  
Dielectric Constant ◽  
Energy Band Diagram ◽  
Drain Current ◽  
Dielectric Constants ◽  
Device Structure ◽  
Current Variation ◽  
Effect Transistor ◽  
The Difference ◽  
And Performance ◽  
Silvaco Atlas

Abstract This paper investigates the simulation and performance of Tunnel field effect transistor (TFET) with a nanocavity in it, which can be used for bio sensing application. The entire simulation is done using the tool Silvaco Atlas TCAD. This paper mainly aims in comparing the different parameters for few biomolecules which has different dielectric constant values, namely Streptavidin, Biotin, APTES, Cellulose and DNA. The device structure here consists of a nanocavity near the source end, which is used to place these biomolecules and hence observe the variation of the Drain current v/s Gate voltage characteristic graph, these biomolecules that are having unique dielectric constants are placed within this cavity and these graphs are observed. The energy band diagram of this device is obtained; on top of this various other parameters namely Surface Potential, Electric field are observed for the above-mentioned Biomolecules. The Length of the cavity of the biosensor is also varied to observe the difference, in addition to this Ion (ON current) variation is plotted for the change in the dielectric constant of the biomolecule.

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

EFFECT OF GATE INSULATOR ON THE PERFORMANCE OF COPPER PHTHALOCYANINE-BASED ORGANIC THIN FILM TRANSISTORS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 745-748
Author(s):  
N. PADMA ◽  
SHASWATI SEN ◽  
A. K. CHAUHAN ◽  
D. K. ASWAL ◽  
S. K. GUPTA ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Gate Dielectric ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Operating Voltage ◽  
Organic Thin Film

Effect of the gate dielectric on the performance of Copper phthalocyanine (CuPc) based top contact organic field effect transistors (OFET) has been studied using thermally grown SiO2 and sputtered HfO x films with dielectric constants of 3.9 and 12.5 respectively. Operating voltages of the devices on SiO2 and HfO x were found to be 10–50 V and 2–3 V, respectively. The lower operating voltage for HfO x is attributed to the higher dielectric constant. Devices on SiO2 and HfO x were found to have field effect mobilities of 0.01 and 3.5 × 10-3 cm2/Vs and drain current modulation of 103 and 102, respectively. Scanning Electron Microscopy showed widely scattered nanowires on HfO x and densely packed nanofibers on SiO2 . X-ray diffraction studies showed better crystallinity of films on SiO2 . The results show that operating voltage of devices can be reduced by using higher dielectric constant material while mobility and FET characteristics depend on structure of CuPc that in turn is influenced by the dielectric.

Characteristics of 2D Cylindrical Photonic Crystals Band Gap with Square Lattice

2013 ◽  
Vol 712-715 ◽  
pp. 302-305
Author(s):  
Zhao Xia Wu ◽  
Wen Chao Li ◽  
Er Dan Gu ◽  
Li Fu Wang
Keyword(s):  
Dielectric Constant ◽  
Photonic Crystals ◽  
Band Gap ◽  
Photonic Band Gap ◽  
Fdtd Method ◽  
Dielectric Constants ◽  
Square Lattice ◽  
The Difference ◽  
Difference Time ◽  
Photonic Band

The structure of two-dimensional (2D) photonic crystals (PCs) with square lattice is proposed in this paper, and researches on characteristics of photonic band gap (PBG) are conducted using finite difference time domain (FDTD) method, then the effects of the dielectric constant and the radius of dielectric rods on band gap are analysed, dielectric rods in air (rods/air). The research results indicate that in the case of TE and TM polarization mode, the difference value of dielectric constant of medium and dielectric rods affects forming PBG.The band gap broadens with the difference value increasing. Whats more, the complete band gap (CBG) appears in range of large rods radius structure when dielectric constants of rods are smaller than that of medium.

scholarly journals Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

2021 ◽  
Author(s):  
Xueke Wang ◽  
Yabin Sun ◽  
Ziyu Liu ◽  
Yun Liu ◽  
Xiaojin Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dynamic Performance ◽  
Drain Current ◽  
Electron Hole ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
And Performance ◽  
First Time ◽  
Tcad Simulations

Abstract In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.

scholarly journals Design and Performance Investigation of Symmetrical Dual Gate Doping-less TFET for Biomolecule Recognition

2021 ◽  
Author(s):  
Aishwarya Tomar ◽  
AK Shankhwar
Keyword(s):  
Dielectric Constant ◽  
Cavity Length ◽  
Drain Current ◽  
Current Sensitivity ◽  
Lower Dielectric Constant ◽  
Dual Gate ◽  
Dual Metal ◽  
And Performance ◽  
K 12 ◽  
Metal Work

This manuscript presents a dielectric modulated doping-less dual metal Gate Tunnel Field Effect Transistor (DL-DMG-TFET) sensor. In which a nano-cavity is presented above the tunnelling point to recognize the bio-molecule like amino acids (AAs), protein, and so on the proposed P+ and N+ sections are invented relying on the electrode's work-function on silicon body. The impacts of metal work regulation, cavity length and thickness variety are investigated for improving band-to-band tunnelling probability at the source-channel intersection. The proposed structure shows perceptible affectability results for neutral and charged biomolecules. The sensitivity of the higher dielectric constant bio-molecules are higher as compared to bio-molecule having lower dielectric constant; the drain current sensitivity of the Gelatin (k=12) is assessed as which is 13% and 35% higher than the affectability of Keratin (k=10) and Bacteriophage T7 (k=5) separately at the nano-cavity length of 30 nm.

A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation

Science ◽  
2013 ◽  
Vol 341 (6146) ◽  
pp. 640-643 ◽  
Author(s):  
Peng-Fei Wang ◽  
Xi Lin ◽  
Lei Liu ◽  
Qing-Qing Sun ◽  
Peng Zhou ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Voltage ◽  
Drain Current ◽  
Floating Gate ◽  
Image Sensing ◽  
Floating Gate Transistor ◽  
Physical Limitations ◽  
Effect Transistor ◽  
And Performance

As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (≤2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra–high-speed writing operations (on time scales of ~1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.

The Influence Factors of Wood Dielectric Constant

2012 ◽  
Vol 461 ◽  
pp. 779-782
Author(s):  
Xiang Ling Zhang ◽  
Ying Chun Cai ◽  
Qiao Fang Zhou ◽  
Jing Yao Zhao
Keyword(s):  
Dielectric Constant ◽  
Influence Factors ◽  
Longitudinal Direction ◽  
Tangential Direction ◽  
Dielectric Constants ◽  
Exponential Relationship ◽  
Change Trend ◽  
The Difference ◽  
The Relationship ◽  
Frequency Heating

Dielectric constants of Larix gmelinii were measured at 1.1 MHz to 25 MHz (near to frequency of high-frequency heating ), from oven-drying condition to 100％ moisture content, with longitudinal, radial and tangential directions measuring in the experiment. The results showed that: the relationship between MC and dielectric constant can be described as exponential relationship from MC=8% to the fiber saturation point (FSP), above FSP it is linear relationship. The dielectric constant showed decreasing trends when frequency raised. When f﹥10MHz change trend is slow. Permittivity across longitudinal direction is bigger than that across transverse direction，but the difference across tangential direction and that across radial direction is small.

Flexible Ceramic-Polymer Composite Substrates with Spatially Variable Dielectrics for Miniaturized RF Applications

2009 ◽  
Vol 1161 ◽  
Author(s):  
Zuhal Tasdemir ◽  
Gullu Kiziltas
Keyword(s):  
Dielectric Constant ◽  
Tape Casting ◽  
Composite Films ◽  
Spatial Arrangement ◽  
Ceramic Composites ◽  
Dielectric Constants ◽  
Novel Material ◽  
The Difference ◽  
High Dielectric ◽  
Tape Cast

AbstractThe goal of this research is to develop a process suitable for producing monolithic conformal substrates with a spatial arrangement of material cells according to a particular design creating novel material systems, useful for many multi- functional electronic and Radio Frequency devices. In this study, MCT ceramics (Mg-Ca-Ti-O systems) and organic binders (polymer solution) are mixed and fabricated as films through a process called tape casting to compromise between high dielectric constant and flexibility. Prior to optimizing the process, several characterization studies are carried out: Commercial spray dried MCT powders (Transtech Inc.) with dielectric constant k=70 and k=20 were analyzed as pressed and produced into tape cast films. Dielectric properties are then measured by an Agilent 16451B material analysis kit and their microscopic behavior is examined by scanning electron microscopy. Results show that flexible composite films show a maximum dielectric constant of ε∼22 unlike their powder pressed form with ε ∼16 but their loss behavior deteriorates when compared with their sintered form and a loss tangent factor of 0.001. The difference is attributed to the air content vs. polymer presence of the material in powder pressed form. Also, these substrates naturally are no longer flexible; hence studies are focused on their tape cast form. The potential of these dielectric shades to serve as candidate constituents for producing monolithic textured polymer-ceramic-composites with controllable loss is studied further. Four properties are of prime importance: tunability of dielectric constants to achieve miniaturization, flexibility via low temperature processing of polymers and loss controllability.

A Modification of the Payne-Jones Method of Identifying Abnormal Differences in WISC-R Performance and Verbal IQ's

1996 ◽  
Vol 12 (1) ◽  
pp. 27-32 ◽  
Author(s):  
Louis M. Hsu
Keyword(s):  
Full Scale ◽  
True Score ◽  
Verbal Iq ◽  
Score Difference ◽  
The Difference ◽  
And Performance

The difference (D) between a person's Verbal IQ (VIQ) and Performance IQ (PIQ) has for some time been considered clinically meaningful ( Kaufman, 1976 , 1979 ; Matarazzo, 1990 , 1991 ; Matarazzo & Herman, 1985 ; Sattler, 1982 ; Wechsler, 1984 ). Particularly useful is information about the degree to which a difference (D) between scores is “abnormal” (i.e., deviant in a standardization group) as opposed to simply “reliable” (i.e., indicative of a true score difference) ( Mittenberg, Thompson, & Schwartz, 1991 ; Silverstein, 1981 ; Payne & Jones, 1957 ). Payne and Jones (1957) proposed a formula to identify “abnormal” differences, which has been used extensively in the literature, and which has generally yielded good approximations to empirically determined “abnormal” differences ( Silverstein, 1985 ; Matarazzo & Herman, 1985 ). However applications of this formula have not taken into account the dependence (demonstrated by Kaufman, 1976 , 1979 , and Matarazzo & Herman, 1985 ) of Ds on Full Scale IQs (FSIQs). This has led to overestimation of “abnormality” of Ds of high FSIQ children, and underestimation of “abnormality” of Ds of low FSIQ children. This article presents a formula for identification of abnormal WISC-R Ds, which overcomes these problems, by explicitly taking into account the dependence of Ds on FSIQs.

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