scholarly journals Ba\(_{1-x}\)Ca\(_{x}\)TiO\(_{3}\) and the Dielectric Properties

2014 ◽  
Vol 24 (2) ◽  
pp. 170
Author(s):  
Nguyen Van Khien ◽  
Vu Dinh Lam ◽  
Le Van Hong
Keyword(s):  
Dielectric Constant ◽  
Frequency Dependence ◽  
Low Frequency ◽  
Solid State Reaction Method ◽  
Ambient Atmosphere ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Impedance Analyzer ◽  
X Ray ◽  
Ray Patterns

Ba1-xCaxTiO3 material samples with x changing from zero to 1 were fabricated by the solid state reaction method at a temperature of 1200 oC in the ambient atmosphere. Crystalline structure of the material samples was recorded and identified by X-ray diffraction and Raman scattering. Analyzing the X-ray patterns found that Ba can be completely substituted by Ca with the concentration lower than 11 at%. The frequency dependence of the impedance (C) and AC conductance (G) of all the samples were recorded in a frequency range lower than 10 MHz by using an impedance analyzer HP 4192A. It was found that in the low frequency range lower than 1 MHz the dielectric constant and its loss decrease as Ca substituted for Ba. Besides an abnormal in the frequency dependence of the dielectric constant was observed for all samples in the higher frequency range up to 10 MHz.

scholarly journals Sintesis Ferroelektrik BaZrxTi1-xO3 Dengan Variasi Zirkonium Terhadap Struktur Kristal dan Konstanta Dielektrik

2021 ◽  
Vol 9 (1) ◽  
pp. 47-54
Author(s):  
Yunita Subarwanti ◽  
◽  
Erni Mariana ◽  
Keyword(s):  
Crystal Structure ◽  
Dielectric Constant ◽  
Sintering Temperature ◽  
Solid State Reaction Method ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Maximum Dielectric Constant ◽  
Die Pressing

This study aims to determine influence addition Zr against the crystal structure and dielectric constant; and to know the influence of variations temperature sintering on addition mole Zr. Barium Zirconium Titanate (BaZrxTi1-xO3) have been made with variation zirconium (Zr) 1%, 5%, 10%, and 20% by solid state reaction method, that is blanded BaTiO3, TiO2 and ZrO2 powder. BaZrxTi1-xO3 powder is printed with die pressing and press hidrolik, then the samples were sintered by furnace at 900oC and 1000oC with holding time 2 hours. Characterization of samples use X-Ray Diffraction and Resistance Capacitance Inductance (RCL meter). Based on result obtained, the larger Zr content cause dielectric constant decreasing because crystal structure have been change from tetragonal (Zr = 1% and 5%) to cubic (Zr = 10% and 20%). The result from X-Ray Diffraction already match with data base ICDD no#360019. Measurement of dielectric constant (K) performed in the frequency range 1 kHz to 100 kHz and the highest value at Zr content 1%, because The dielectric constant decreasing with the larger Zr content. The maximum dielectric constant is obtained at mol Zr 5% and sintering temperature 1000oC, that is 150. The minimum dielectric constant is obtained at mol Zr 20% and sintering temperature 900oC, that is 62.

scholarly journals Influence of Li2CO3 addition on electrical and magnetic properties of Ni0.6Mg0.4Fe2O4

2020 ◽  
Vol 10 (03) ◽  
pp. 2050003
Author(s):  
M. R. Hassan ◽  
M. T. Islam ◽  
M. N. I. Khan
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Low Frequency ◽  
Solid State Reaction Method ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical And Magnetic Properties ◽  
Frequency Regime ◽  
Xrd Patterns

In this research, influence of adding Li2CO3 (at 0%, 2%, 4%, 6%) on electrical and magnetic properties of [Formula: see text][Formula: see text]Fe2O4 (with 60% Ni and 40% Mg) ferrite has been studied. The samples are prepared by solid state reaction method and sintered at 1300∘C for 6[Formula: see text]h. X-ray diffraction (XRD) patterns show the samples belong to single-phase cubic structure without any impurity phase. The magnetic properties (saturation magnetization and coercivity) of the samples have been investigated by VSM and found that the higher concentration of Li2CO3 reduces the hysteresis loss. DC resistivity increases with Li2CO3 contents whereas it decreases initially and then becomes constant at lower value with temperature which indicates that the studied samples are semiconductor. The dielectric dispersion occurs at a low-frequency regime and the loss peaks are formed in a higher frequency regime, which are due to the presence of resonance between applied frequency and hopping frequency of charge carriers. Notably, the loss peaks are shifted to the lower frequency with Li2CO3 additions.

scholarly journals Structure and electric properties of cerium substituted SrBi1.8Ce0.2Nb2O9 and SrBi1.8Ce0.2Ta2O9 ceramics

2016 ◽  
Vol 10 (3) ◽  
pp. 183-188 ◽  
Author(s):  
Mohamed Afqir ◽  
Amina Tachafine ◽  
Didier Fasquelle ◽  
Mohamed Elaatmani ◽  
Jean-Claude Carru ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Room Temperature ◽  
Single Phase ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Lcr Meter ◽  
Curie Temperature Tc

SrBi1.8Ce0.2Nb2O9 (SBCN) and SrBi1.8Ce0.2Ta2O9 (SBCT) powders were prepared via solid-state reaction method. X-ray diffraction analysis reveals that the SBCN and SBCT powders have the single phase orthorhom-bic Aurivillius structure at room temperature. The contribution of Raman scattering and FTIR spectroscopy of these samples were relatively smooth and resemble each other. The calcined powders were uniaxially pressed and sintered at 1250?C for 8 h to obtaine dense ceramics. Dielectric constant, loss tangent and AC conductivity of the sintered Ce-doped SrBi2Nb2O9 and SrBi2Ta2O9 ceramics were measured by LCR meter. The Ce-doped SBN (SBCN) ceramics have a higher Curie temperature (TC) and dielectric constant at TC (380?C and ?? ~3510) compared to the Ce-doped SBT (SBCT) ceramics (330?C and ?? ~115) when measured at 100Hz. However, the Ce-doped SBT (SBCT) ceramics have lower conductivity and dielectric loss.

Temperature Dependence on Dielectric Response of La0.7Ba0.3Mn0.4Ti0.6O3 Ceramic

2015 ◽  
Vol 1107 ◽  
pp. 45-52
Author(s):  
Aaliyawani Ezzerin Sinin ◽  
Walter Charles Primus ◽  
Abdul Halim Shaari ◽  
Zainal Abidin Talib ◽  
Sinin Hamdan
Keyword(s):  
Dielectric Properties ◽  
Temperature Dependence ◽  
Low Frequency ◽  
Sintered Sample ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
Low Frequencies ◽  
X Ray ◽  
Lcr Meter

Ceramic sample of La0.70Ba0.30Mn0.40Ti0.60O3 oxide has been prepared by the conventional solid-state reaction method. The sintered sample was characterized by using x-ray diffraction (XRD) and low frequency LCR meter. XRD result shows that the sample has a cubic structure with the existence of impurity phase. The dielectric properties of La0.70Ba0.30Mn0.40Ti0.60O3 measured from room temperature to 200°C shows that the dielectric permittivity is temperature dependence with strong dispersion at low frequencies. A circuit model based on the universal capacitor response function is also being used to represent the dielectric properties of the sample.

Structural, dielectric, ferroelectric and impedance spectroscopic studies on Ba1−xSrxTiO3(0.15 ≤ x ≤ 0.35)

2019 ◽  
Vol 33 (17) ◽  
pp. 1950193 ◽  
Author(s):  
Shukdev Pandey ◽  
Om Parkash ◽  
Devendra Kumar
Keyword(s):  
Equivalent Circuit Model ◽  
Solid State Reaction Method ◽  
Spectroscopic Studies ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
X Ray ◽  
X Band ◽  
Xrd Patterns ◽  
Diffuse Phase

Compositions with x = 0.15, 0.20, 0.25, 0.30 and 0.35 were synthesized in the system [Formula: see text] using conventional solid state reaction method and characterized by X-Ray Diffraction (XRD), Raman spectroscopy and Scanning Electron Microscopy (SEM). Tetragonal phase was confirmed in all the samples using Rietveld refinement of the XRD patterns and observation of their Raman spectra. Dielectric and impedance measurements were carried out in the temperature range 300–723 K in the frequency range 1 Hz to 1 MHz. The samples exhibit diffuse phase transition (DPT). Equivalent circuit model involving combination of Constant Phase angle Elements (CPE) and resistances (R) was developed which represents the data well. Expressions for the values of resistances (R) were established in terms of composition and temperature empirically. P-E loops indicated normal ferroelectric behavior for all the samples. Dielectric constant was also measured in the frequency range 8–12 GHz in the X band of microwaves.

Preparation and Dielectric Behaviour of Magnetoelectric HoMnO3-BaTiO3 Composites

2007 ◽  
Vol 334-335 ◽  
pp. 1021-1024
Author(s):  
Y.J. Wu ◽  
H. Zhang ◽  
J.G. Wan ◽  
S.F. Zhao ◽  
J.M. Liu ◽  
...  
Keyword(s):  
Magnetic Ordering ◽  
Solid State Reaction Method ◽  
Phase Transformation Temperature ◽  
Antiferromagnetic Phase ◽  
X Ray Diffraction ◽  
Coupling Interaction ◽  
Impedance Analyzer ◽  
Reaction Method ◽  
X Ray ◽  
Scanning Electron

In this work, we report the magnetoelectric HoMnO3-BaTiO3 composites prepared by the solid-state reaction method. X-ray diffraction and scanning electron microscopy were used to characterize the phase composition and structures of the composites. The material/impedance analyzer was used to investigate the dielectric properties of the composites. It is shown that the composite consists of both ferroelectric ordering and magnetic ordering. The addition of BaTiO3 decreases the antiferromagnetic phase transformation temperature of the HoMnO3, indicating that there exists the coupling interaction between BaTiO3 and HoMnO3 phases.

TRANSPORT PROPERTIES OF THERMALLY EVAPORATED In2Se3 THIN FILMS

2009 ◽  
Vol 16 (05) ◽  
pp. 723-729 ◽  
Author(s):  
D. NITHYAPRAKASH ◽  
B. PUNITHAVENI ◽  
J. CHANDRASEKARAN
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ac Conductivity ◽  
Thermal Evaporation ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Cbh Model ◽  
X Ray ◽  
Correlated Barrier Hopping ◽  
Tan Δ

Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as-grown films were amorphous in nature and became polycrystalline γ-In2Se3 films after annealing. The ac conductivity and dielectric properties of In2Se3 films have been investigated in the frequency range 100 Hz–100 kHz. The ac conductivity σ ac is found to be proportional to ωn where n < 1. The temperature dependence of both ac conductivity and the parameter n is reasonably well interpreted by the correlated barrier hopping (CBH) model. The values of dielectric constant ε and loss tangent tan δ were found to increase with frequency and temperature. The ac conductivity of the films was found to be hopping mechanism. In I–V characteristic for different field and temperature were studied and it has been found that the conduction process is Poole–Frenkel type.

Nature of Low-Frequency Excess Noise in n-Type Gallium Nitride

2000 ◽  
Vol 622 ◽  
Author(s):  
C. F. Zhu ◽  
W. K. Fong ◽  
B. H. Leung ◽  
C. C. Cheng ◽  
C. Surya
Keyword(s):  
Flicker Noise ◽  
Power Spectra ◽  
Low Frequency ◽  
Excess Noise ◽  
Rf Plasma ◽  
Frequency Noise ◽  
Noise Power ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTLow-frequency noise is investigated in n-type GaN film grown by rf-plasma assisted molecular beam epitaxy. The temperature dependence of the voltage noise power spectra, SV(f), was examined from 400K to 80K in the frequency range between 30Hz and 100KHz, which can be modeled as the superposition of 1/f (flicker) noise G-R noise. At f > 500 Hz the noise is dominated by G-R noise with activation energies of 360meV and 65meV from the conduct band. The results clearly demonstrate the trap origin for both the 1/f noise and G-R noise. At the low-frequency range the fluctuation was dominated by 1/f noise. To determine the origin of the noise we considered both the bulk mobility fluctuation and the trap fluctuation models. Our experimental results showed that rapid thermal annealing (RTA) at 800°C resulted in over one order of magnitude decrease in the Hooge parameter. Annealing at temperatures in excess of 1000°C resulted in significant increase in the noise. Photoluminescence and x-ray diffraction measurements also showed that the crystallinity of the films improved with RTA at 800°C with an accompanying reduction in deep levels. Annealing at 900°C and 1000°C resulted in an increase in the FWHM of the x-ray diffraction indicative of thermal decomposition of the materials. The results are in excellent agreement with the trend of Hooge parameters as a function of annealing temperature, strongly indicating trap origin of the observed 1/f noise.

Structural and Dielectric Properties of Na0.5Bi0.5TiO3 Ferroelectric Ceramics

2012 ◽  
Vol 585 ◽  
pp. 219-223
Author(s):  
Rekha Kumari ◽  
N. Ahlawat ◽  
Ashish Agarwal ◽  
M. Sindhu ◽  
N.N. Ahlawat
Keyword(s):  
Dielectric Properties ◽  
Solid State Reaction Method ◽  
Wide Frequency Range ◽  
Ferroelectric Ceramics ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
X Ray ◽  
Different Temperatures

Na0.5Bi0.5TiO3 (NBT) ceramics were synthesized by conventional solid state reaction method. Structural and dielectric properties of these ceramics were investigated. Crystalline phase of sintered ceramics was investigated by X-ray diffraction (XRD). The Rietveld refinement of powder X-ray diffraction revealed that the prepared ceramics exhibit the rhombohedral space group R3c. Dielectric properties of Na0.5Bi0. analyzer.5TiO3 (NBT) ceramics were studied at different temperatures in a wide frequency range using impedance

scholarly journals Study of structural and dielectric properties of Nickel-doped BaTiO3 material

2019 ◽  
Vol 8 (3) ◽  
pp. 228-233
Author(s):  
Hafes Ed-Dnoub ◽  
Ouafae El Ghadraoui ◽  
Mohammed Zouhairi ◽  
Ahmed Harrach ◽  
Tajeddine Lamcharfi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electron Microscope ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Scanning Electron Microscope ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Perovskite Type ◽  
Scanning Electron

In this work, the effect of nickel (Ni) insertion on the structural and dielectric properties of BaTiO3 material was investigated. A series of powders of composition Ba1-xNixTiO3 (x = 0, 0.05, 0.1, 0.15 and 0.20) were synthesized by solid method. The analysis by X-Ray Diffraction (XRD) shows that the obtained compounds crystallize in a phase of perovskite type. All the peaks are indexed in a phase of quadratic symmetry. Characterization by the Scanning Electron Microscope (SEM) indicates a heterogeneous microstructure of the grains. The study by spectroscopy of impedance in the frequency range [500Hz-1MHz] highlighted the effect of the nickel insertion on the transition temperature and the dielectric constant value.

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