scholarly journals Formation of a quasi-equilibrium domain structure of crystals of the TGS group near TC

2021 ◽  
Vol 23 (4) ◽  
pp. 507-517
Author(s):  
Olga M. Golitsyna ◽  
Sergey N. Drozhdin
Keyword(s):  
Domain Structure ◽  
Domain Size ◽  
Piezoresponse Force Microscopy ◽  
Time Correlation ◽  
Time Correlation Function ◽  
Quasi Equilibrium ◽  
Force Microscopy ◽  
Microscopy Technique ◽  
Scalar Order Parameter ◽  
Average Domain Size

In the temperature range ΔT ≈ 321 K ÷ 322 K, the kinetics of the nonequilibrium domain structure of triglycine sulphate crystals, both pure and with specially introduced defects, has been studied by means of piezoresponse force microscopy technique. The temporal change in the domain structure as a set of regions with a scalar order parameter of P (r, t) = +1 and −1 for oppositely polarized domains was analysed by the behaviour of the space-time correlation function C(r,t) = ·Р(r,t)Р(0,t)Ò. At different distances from the Curie point Tc, the characteristic length Lc, as a scale measure of the average domain size, increases with time according to the power law Lc(t)~(t−t0)a. A decrease of the exponent a with distance from Tc can be a consequence of the transition of the domain structure of TGS crystals from a non-conservative state to aconservative one.

Piezoresponse Force Microscopy Studies of pc-BiFeO3 Thin Films Produced by the Simultaneous Laser Ablation of Bi and FeO3

2012 ◽  
Vol 1477 ◽  
Author(s):  
C. I. Enriquez-Flores ◽  
J. J. Gervacio-Arciniega ◽  
F. J. Flores-Ruiz ◽  
D. Cardona ◽  
E. Camps ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Domain Size ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Bismuth Iron Oxide ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Bifeo3 Thin Films ◽  
Ferroelectric Domains

ABSTRACTBismuth iron oxide BFO films were produced by the pulsed laser deposition technique. These films are a mixture of BiFeO3 ferroelectrical and Bi25FeO40 piezoelectrical phases. The ferroelectrical domain structure of these films was studied via contact resonance piezoresponse force microscopy (CR-PFM) and resonance tracking PFM (RT-PFM). The proportions of area of these BFO phases were derived from the PFM images. The ferroelectrical domain size corresponds to the size of the BiFeO3 crystals. The CR-PFM and RT-PFM techniques allowed us to be able to distinguish between the ferroelectric domains and the piezoelectric regions existing in the polycrystalline films.

scholarly journals Structure and Dynamics of Ferroelectric Domains in Polycrystalline Pb(Fe1/2Nb1/2)O3

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic
Keyword(s):  
Domain Wall ◽  
Ambient Temperature ◽  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Paraelectric Phase Transition ◽  
Force Microscopy ◽  
Ferroelectric Domains

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.

Domain structure investigation of non-stoichiometric strontium ferrites and cobaltites

2013 ◽  
Vol 28 (S2) ◽  
pp. S51-S64 ◽  
Author(s):  
U.V. Ancharova ◽  
S.V. Cherepanova
Keyword(s):  
Domain Structure ◽  
Domain Size ◽  
Orthorhombic Distortion ◽  
Synchrotron Powder Diffraction ◽  
Structure Simulation ◽  
Average Domain Size ◽  
Xrd Patterns ◽  
Average Domain ◽  
Debye Equation ◽  
Strontium Ferrites

Monte Carlo domain structure simulation and Debye equation calculation of XRD patterns were used to confirm the formation of domain structure and investigate its peculiarities. Correspondence of simulated XRD patterns with synchrotron powder diffraction experiments is achieved on the conditions that beside of 90o rotations of brownmillerite-like domains inside perovskite-like matrix each domain contains areas with perpendicularly oriented tetrahedral chains. Influence of such parameters as stoichiometry, average domain size, orthorhombic distortion degree on the XRD patterns is considered.

The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

2005 ◽  
Vol 902 ◽  
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
Yanrong Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Sputtering ◽  
Piezoresponse Force Microscopy ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Coefficient ◽  
Pure Perovskite Structure ◽  
Force Microscopy ◽  
Xrd Patterns

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

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