scholarly journals Preparation of CdTe Nuclear Detector Material in Thin Film Form using Thermal Evaporation Method

2017 ◽  
Vol 4 (1) ◽  
pp. 29-34
Author(s):  
K M A Hussain ◽  
T. Faruqe ◽  
J. Parvin ◽  
S Ahmed ◽  
Z. H. Mahmood ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Evaporation ◽  
Radiation Detector ◽  
Visible Region ◽  
Deposition Process ◽  
Optical Measurements ◽  
Crystal Thickness ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray

A study is initiated about cadmium telluride (CdTe) materials deposition and characterization for radiation detector application. The CdTe thin film was grown on glass substrate using thermal evaporation technique in vacuum to avoid the inclusion of impurities in the films. Three different samples were prepared where film thickness were 500, 600 and 700 nm measured by insitu quartz crystal thickness monitoring device during deposition process. The structural studies of the films were carried out using (X-ray diffraction) XRD analytical study and optical measurements were performed in the UV-VIS-NIR region using a spectrophotometer. The films grown at room temperature are polycrystalline as found by X-ray diffraction peaks. The optical transmission spectra of CdTe films showed a high transmission of about 85% to 90% in the visible region with a sharp fall near the fundamental absorption at 880 nm wavelength for the 500 and 600 nm films, and fundamental absorption at 1270 nm wavelength for 700 nm film.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

Structural and Optical Properties of Thermally Evaporated BiSb2S3 Thin Films

2013 ◽  
Vol 678 ◽  
pp. 123-130 ◽  
Author(s):  
K. Kandaswamy ◽  
Panneerselvam Chirstopher Selvin ◽  
B. Nalini ◽  
I. Mohamed Abdulla ◽  
K.P. Abhilash
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Different Thickness ◽  
Absorption Measurements

Thin films of Bi1.5(Sb2S3)0.5of different thickness were deposited on glass substrate by vacuum thermal evaporation method and annealed at different temperature. The elemental compositions of the films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films possess polycrystalline nature with orthorhombic phase and the grain size of the films vary from 27.92 to 81.37 nm. The observed bandgap energies (varying from 1.787eV to 1.963 eV) of the films and its temperature dependence were estimated from optical absorption measurements.

Effect of Temperature and Synthesis of CuO Nanostructures on Cu Plate by Thermal Method

2013 ◽  
Vol 634-638 ◽  
pp. 2160-2162 ◽  
Author(s):  
Benjara Supakosl ◽  
Vatcharinkorn Mekla ◽  
Chakkaphan Raksapha
Keyword(s):  
Thermal Evaporation ◽  
Metal Plate ◽  
Effect Of Temperature ◽  
Thermal Method ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Thermal Evaporation Method ◽  
Xrd Pattern ◽  
X Ray ◽  
20 Nm

CuO nanostructures were synthesized by thermal evaporation method using Cu metal plate in air at temperatures ranging from 400 to 600 C for 6 h. The CuO nanostructures were characterized by X-ray diffraction, XRD and field emission scanning electron microscopy, FE-SEM. X-ray diffraction, XRD pattern showed the bicrystal nanostructure of CuO and Cu2O. FE-SEM images indicated that the nanowires depended on temperatures. The diameter of Cuo nanowires varies from 10 nm to 20 nm and length of several 5 micrometers.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

scholarly journals Unraveling energy consumption by using low-cost and reevaluated thermoelectricThin Films

2020 ◽  
Vol 44 (5) ◽  
pp. 442-449
Author(s):  
Gizem DURAK YÜZÜAK ◽  
Seray ÖZKAN ◽  
Ercüment YÜZÜAK
Keyword(s):  
Thermal Evaporation ◽  
Low Cost ◽  
Thermoelectric Module ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Type Semiconductor ◽  
Peltier Modules ◽  
Thermoelectric Thin Film ◽  
Technological Improvements

Energy is undoubtedly one of our most important demands whose consumption is constantly increasingand will continue to increase soon. One of the most important factors in attaining the required energy is to providehigh efficiency at a low cost with the help of new technological improvements by evaluating wastes. Energy demandcould be achieved for a relatively large thermoelectric power value by recycling the Peltier modules from waste onesand adjusting their properties with nanotechnology. For this aim, thermoelectric thin film modules were grown onsilicon (Si), glass, and Kapton substrates with thermal evaporation method by using two different BiTeSb/BiTeSealloy materials which are placed in industrial Peltiers as the p- and n-type semiconductor. The thin films structuraland morphological characterizations were investigated by X-ray diffraction (XRD) and scanning electron microscopy(SEM) experiments reveal fine surface with uniformly distributed continuous structure. Seebeck coefficiency (|S|) of thesubstantial modules were investigated by forming certain temperature gradients on them making serial connections usinga homemade measurement setup. |S|=143.86μV/K is obtained for the thermoelectric module on Si substrate and 44.96μV/K and 24.98μV/K are calculated for glass and Kapton, respectively.

scholarly journals Effect of thickness on structural properties of BixSb2-xTe3 thin films

2019 ◽  
Vol 17 (41) ◽  
pp. 15-28
Author(s):  
Hussain. M. Selman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Average Surface Roughness ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Thickness

BixSb2-xTe3 alloys with different ratios of Bi (x=0, 0.1, 0.3, 0.5, and 2) have been prepared, Thin films of these alloys were prepared using thermal evaporation method under vacuum of 10-5 Torr on glass substrates at room temperature with different deposition rate (0.16, 0.5, 0.83) nm/sec for thickness (100, 300, 500) respectively. The X–ray diffraction measurements for BixSb2-xTe3 bulk and thin films indicate the polycrystalline structure with a strong intensity of peak of plane (015) preferred orientation with additional peaks, (0015) and (1010 ) reflections planes, which is meaning that all films present a very good texture along the (015) plane axis at different intensities for each thin film for different thickness. AFM measurements for the thin films of BixSb2-xTe3, show that the grain size and the average surface roughness decreases with increasing of the percentage Bi for different thickness.

Characterization of the Thin Films Structures in Subwavelength Regime as Biosensing Materials

2015 ◽  
Vol 772 ◽  
pp. 62-66 ◽  
Author(s):  
R. Steigmann ◽  
N. Iftimie ◽  
A. Savin
Keyword(s):  
High Performance ◽  
Thermal Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Metallic Strip

Zinc oxide nanostructured materials, such as films and nanoparticles, could provide a suitable platform for development of high performance biosensing material due to their unique fundamental material properties. This paper presents the characterization of ZnO thin film as biosensing material by metallic strip grating structure (MSG), for the real-time detection. In this work, high quality ZnO films were grown on ITO/glass substrates by vacuum thermal evaporation method. We characterized by X-ray diffraction (XRD) the film crystalline quality and by scanning electron microscopy (SEM) the film morphology.

Heteroe-Pitaxial Growth and Optical Properties of SnO2 Nanowires on ZnS Nanobelts

2012 ◽  
Vol 535-537 ◽  
pp. 481-485 ◽  
Author(s):  
Mang Jiang ◽  
Jun Hong Duan ◽  
Zhiang Liu
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Structural Information ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

The authors present the results of hetero-epitaxial growth of ultrafine SnO2nanowires on ZnS nanobelt substrates by a simple thermal evaporation method. ZnS/SnO2hetero-nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), transmission electron microscopy (TEM) to obtain the morphology and structural information. Comparing with ZnS nanobelts and SnO2nanowires respectively, the optical properties of ZnS/SnO2hetero-nanostructures are studied by Raman scattering and photoluminescence (PL) spectroscopy at room temperature.

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