scholarly journals Influence of Deposition Temperature on Nanocrystalline CdS Thin Films: Application in Solar Cells as Antireflection Coatings

2014 ◽  
Vol 36 ◽  
pp. 21-36
Author(s):  
S.M. Patil ◽  
P.H. Pawar
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Deposition Temperature ◽  
Optical Band Gap ◽  
Uv Spectroscopy ◽  
Hexagonal Phase ◽  
Antireflection Coatings ◽  
X Ray ◽  
Increase With Increase ◽  
Cds Thin Films

Nanocrystalline CdS thin films were successfully prepared using simple chemical bath deposition technique. Cadmium sulphate, thiourea and deionised water were used as starting precursor solution. The prepared thin films were characterized using X-ray diffractogram (XRD), Scanning electron microscope (SEM), elemental composition using energy dispersive spectrophotometer (EDAX) and optical band gap (UV-Spectroscopy).X-ray diffractogram reveals that present of cubic and hexagonal phase. The thickness, crystallite size and grain size were observed to be increase with increase operating temperature of bath while optical band gap energy slightly decreases. Effect of deposition temperature on physical, structural, microstructural, electrical and optical properties of these films was studied and presented in the present investigation. Prepared thin films shows good response towards photoconducting in presence and absent of light

scholarly journals Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–x Zn x S thin films

2021 ◽  
Vol 42 (11) ◽  
pp. 112101
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Abstract Cd1– x Zn x S thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E g can be expressed by the equation E g(x) = 0.59x 2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

Investigative Study of Optical Parameters of Se80.5Bi1.5Te18-yAgy Thin Films

2012 ◽  
Vol 710 ◽  
pp. 739-744 ◽  
Author(s):  
Anup Kumar ◽  
Pawan Heera ◽  
P. B Baraman ◽  
Raman Sharma
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Integrated Circuits ◽  
Band Gap ◽  
Communication Systems ◽  
Optical Band Gap ◽  
Optical Parameters ◽  
Optical Integrated Circuits ◽  
Increase With Increase ◽  
Good Transparency

The optical constants, like absorption coefficient (α), optical band gap (Eg) and refractive index (n), in Se80.5Bi1.5Te18-yAgy (y= 0, 1.0 and1.5) thin films are calculated using well known Swanepoel’s method in the spectral range of 600-2000 nm. The optical band gap has been estimated by using Tauc’s extrapolation method and is found to increase with increase in Ag content. The present results shows that the large value of nonlinear refractive index and good transparency of these thin films will make them a very promising materials for optical integrated circuits in the optical communication systems.

Effect of Tin Composition on Cu2ZnSnS4 Photovoltaic Absorbers

2012 ◽  
Vol 534 ◽  
pp. 156-159 ◽  
Author(s):  
Dong Hua Fan ◽  
Rong Zhang ◽  
Hui Ren Peng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Crystallite Size ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Poor Condition ◽  
Czts Thin Films

Cu2ZnSnS4 (CZTS) thin films are prepared by sulfurizing the precursors deposited by vacuum evaporation methods. The samples sulfurized at 500°C for 3h shows the strong (112) diffraction peak at 28.45˚, suggesting the successful synthesis of CZTS thin films. The X-ray diffraction shows that CZTS thin film prepared in Sn-poor condition have the best crystallinity. The Sn-dependent crystallite size was calculated to be 19.53-21.03 nm. In addition, we found that the optical band gap with various Sn contents can be modulated at 1.48-1.85 eV

Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition

2011 ◽  
Vol 110-116 ◽  
pp. 1406-1410
Author(s):  
Hai Yi Li ◽  
Yan Lai Wang ◽  
Shi Liang Ban ◽  
Yi Min Wang
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Film Sample ◽  
X Ray ◽  
Gap Energy ◽  
Cds Thin Films ◽  
Cubic Structure

CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS (NH2)2. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.

scholarly journals Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 87
Author(s):  
Atef S. Gadalla ◽  
Hamdan A. S. Al-shamiri ◽  
Saad Melhi Alshahrani ◽  
Huda F. Khalil ◽  
Mahmoud M. El Nahas ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Photon Energy ◽  
Hexagonal Phase ◽  
High Vacuum ◽  
Structural Features ◽  
Film Deposition ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Films

In this study, cadmium Sulfide (CdS) thin films were synthesized on quartz substrates using an infrared pulsed laser deposition (IR-PLD) technique under high vacuum (~10−6 Torr) conditions. X-ray diffraction was used to evaluate the structural features. According to X-ray analysis, the deposited CdS films are crystalline and have a favored orientation on a plane (110) of an orthorhombic. The peak intensity and the average crystallite size increases with increasing the film thickness. After annealing at 300 °C, the orthorhombic phase transformed into a predominant hexagonal phase and the same result was obtained by SEM photographs as well. Spectrophotometric measurements of transmittance and reflectance of the CdS films were used to derive optical constants (n, k, and absorption coefficient α). The optical band gap energy was found to be 2.44 eV. The plasma plume formation and expansion during the film deposition have also been discussed. The photocurrent response as a function of the incident photon energy E (eV) at different bias voltages for different samples of thicknesses (85, 180, 220 and 340 nm) have been studied, indicating that the photocurrent increases by increasing both the film thickness and photon energy with a peak in the vicinity of the band edge. Thus, the prepared CdS films are promising for application in optoelectronic field.

scholarly journals Annealing Effects on the Properties of Chemically Deposited CdS Thin Films at Ambient Condition

2012 ◽  
Vol 60 (2) ◽  
pp. 283-288 ◽  
Author(s):  
G. Mustafa ◽  
M.R.I. Chowdhury ◽  
D.K. Saha ◽  
S. Hussain ◽  
O. Islam
Keyword(s):  
Thin Films ◽  
Hexagonal Phase ◽  
Ambient Condition ◽  
Cubic Phase ◽  
Optical And Electrical Properties ◽  
Grain Sizes ◽  
Increase With Increase ◽  
Annealing Effects ◽  
Cds Thin Films ◽  
Absorption Measurements

Chemically-deposited CdS thin films have been investigated using various techniques to discuss annealing effects on the structural, morphological, optical and electrical properties of the films. It has been observed from XRD that the deposited layers are mainly consisting of CdS phase. After annealing, metastable cubic phase was transformed into stable hexagonal phase. The average grain sizes were found to increase and the lattice constant, micro-strain and dislocation density were found to decrease after annealing. Optical absorption measurements show that band gap is observed to be 2.42 eV for as deposited and be 2.27 eV upon heat treatment at 673 K for one hour in air. The conductivity of this film has been determined by I-V measurement and observed to increase with increase of temperature. The activation energy of electrical conductivity of this film is also determined.DOI: http://dx.doi.org/10.3329/dujs.v60i2.11536 Dhaka Univ. J. Sci. 60(2): 283-288, 2012 (July)

scholarly journals Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd1-xZnxS thin films

2021 ◽  
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Cd1-xZnxS thin films were deposited by chemical bath deposition (CBD) on glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. Due to the less Cd2+ involved in the reaction and little precipitation in the solution. The distribution diagrams of thin film elements illustrate that the film growth rate changes on the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value Eg can be expressed by the equation Eg(x)=0.59x2+0.69x+2.43. Increasing the zinc content can increase the optical band gap, the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300 - 800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

scholarly journals Chromium-Induced Nanocrystallization of a-Si Thin Films into the Wurtzite Structure

2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
K. Uma Mahendra Kumar ◽  
M. Ghanashyam Krishna
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Nanocrystalline Silicon ◽  
Spectral Transmittance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Silicides ◽  
Crystallite Sizes ◽  
Cr Addition

Chromium metal-induced nanocrystallization of amorphous silicon (a-Si) thin films is reported. The nanocrystalline nature of these films is confirmed from X-ray diffraction and Raman spectroscopy. Significantly, the deconvolution of Raman spectra reveals that the thin films were crystallized in a mixed phase of cubic diamond and wurzite structure as evidenced by the lines at 512 and 496 cm−1, respectively. The crystallite sizes were between 4 to 8 nm. Optical properties of the crystallized silicon, derived from spectral transmittance curves, revealed high transmission in the region above the band gap. Optical band gap varied between 1.3 to 2.0 eV depending on the nature of crystallinity of these films and remained unaltered with increase in Cr addition from 5 to 30%. This signifies that the electronic structure of the nanocrystalline Silicon films is not affected considerably inspite of the presence of metal silicides and the process of crystallization.

scholarly journals Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

2021 ◽  
Author(s):  
Hamdan Ali Sultan Ali Sultan Al-shamiri ◽  
Atef S. Gadalla ◽  
Huda F. Khalil ◽  
Mahmoud M. El Nahas ◽  
Mohamed A. Khedr
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Photon Energy ◽  
Hexagonal Phase ◽  
High Vacuum ◽  
Structural Features ◽  
Film Deposition ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Films

Abstract Cadmium Sulfide (Cds) thin films were synthesized on quartz substrates using infrared pulsed laser deposition (IR-PLD) technique under high vacuum (~ 10− 6 Torr). X-ray diffraction was used to evaluate the structural features. According to X-ray analysis the deposited CdS films are crystalline and have a favored orientation on a plane (110) of an orthorhombic system and the peak intensity and the average crystallite size increases with increasing the film thickness. After annealing at 300oC the orthorhombic phase transformed into predominant hexagonal phase and the same result was obtained by SEM photographs. Spectrophotometric measurements of transmittance and reflectance of the Cds films were used to derive optical constants (n, k and absorption coefficient α). The optical band gap energy was found to be 2.44 eV. The plasma plume formation and expansion during the film deposition have been discussed. The photocurrent response as a function of the incident photon energy E (eV) at different bias voltages for different samples of thicknesses (85, 180, 220 and 340 nm) have been studied, indicating that the photocurrent increases by increasing both the film thickness and photon energy with a peak in the vicinity of the band edge. Thus, the prepared Cds films are promising for application in optoelectronic field.

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