scholarly journals Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–x Zn x S thin films

2021 ◽  
Vol 42 (11) ◽  
pp. 112101
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Abstract Cd1– x Zn x S thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E g can be expressed by the equation E g(x) = 0.59x 2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

scholarly journals Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd1-xZnxS thin films

2021 ◽  
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Cd1-xZnxS thin films were deposited by chemical bath deposition (CBD) on glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. Due to the less Cd2+ involved in the reaction and little precipitation in the solution. The distribution diagrams of thin film elements illustrate that the film growth rate changes on the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value Eg can be expressed by the equation Eg(x)=0.59x2+0.69x+2.43. Increasing the zinc content can increase the optical band gap, the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300 - 800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Effect of Tin Composition on Cu2ZnSnS4 Photovoltaic Absorbers

2012 ◽  
Vol 534 ◽  
pp. 156-159 ◽  
Author(s):  
Dong Hua Fan ◽  
Rong Zhang ◽  
Hui Ren Peng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Crystallite Size ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Poor Condition ◽  
Czts Thin Films

Cu2ZnSnS4 (CZTS) thin films are prepared by sulfurizing the precursors deposited by vacuum evaporation methods. The samples sulfurized at 500°C for 3h shows the strong (112) diffraction peak at 28.45˚, suggesting the successful synthesis of CZTS thin films. The X-ray diffraction shows that CZTS thin film prepared in Sn-poor condition have the best crystallinity. The Sn-dependent crystallite size was calculated to be 19.53-21.03 nm. In addition, we found that the optical band gap with various Sn contents can be modulated at 1.48-1.85 eV

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Optical and electrochromic properties of heated and annealed MoO3 thin films

2001 ◽  
Vol 16 (9) ◽  
pp. 2695-2708 ◽  
Author(s):  
Zahid Hussain
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Molybdenum Trioxide ◽  
Annealing Treatment ◽  
Phonon Energy ◽  
Blue Band ◽  
Dependent Change ◽  
Annealing Effects

Heating and annealing effects on the optical properties of slightly blue substoichiometric molybdenum trioxide thin films are reported partially. During heating and annealing, different levels of coloration seem to be generated by simultaneous reduction and proton injection into thin films, which cause the formation of hydrogen molybdenum bronzes of different concentrations. The optical band gap, Eo, of MoO3 thin film when annealed in between 313 and 473 K is decreased to 2.82 eV, and this reduction in Eo has been explained with a view to phonon and polaron species. Moreover, temperature-dependent change in the optical band gap has also been interpreted in terms of band gap slope, B, and the real part of the refractive index, n. Urbach slope, σ, also goes down to 0.67 eV−1 due to annealing treatment. Using the oscillator model, a phonon energy, hνo, of about 0.08 eV was found for the reported MoO3 thin film which is very close to the characteristic phonon energy of MoO3. Over and above, the intensity for the blue absorption band, over the photon energy range 0.4–3.0 eV, also reaches a maximum as MoO3 thin film is annealed at 473 K for 1 h and then decreases by 32% after annealing at the same temperature for 2 h. This phenomenon is due to polaronic band intensity which rises and falls during annealing. Half-width of the blue band, as found by fitting polaron model, is changed only by 3% on annealing the MoO3 thin film at 473 K as compared to its value at room temperature.

scholarly journals Work Function Tuning of Zinc–Tin Oxide Thin Films Using High-Density O2 Plasma Treatment

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1026
Author(s):  
Young-Hee Joo ◽  
Jae-Hyung Wi ◽  
Woo-Jung Lee ◽  
Yong-Duck Chung ◽  
Dae-Hyung Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Treatment ◽  
Work Function ◽  
Band Gap ◽  
Optical Band Gap ◽  
High Density ◽  
Work Function Tuning ◽  
O2 Plasma Treatment ◽  
O2 Plasma

Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc’s relationship from transmittance data. The work function of Zn0.6Sn0.4O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6Sn0.4O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells.

scholarly journals Synthesis, Optical, Chemical and Thermal Characterizations of PMMA-PS/CeO2 Nanoparticles Thin Film

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1158
Author(s):  
Areen A. Bani-Salameh ◽  
A. A. Ahmad ◽  
A. M. Alsaad ◽  
I. A. Qattan ◽  
Ihsan A. Aljarrah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
High Energy ◽  
Band Gap Energy ◽  
Polymeric Thin Films ◽  
Gap Energy ◽  
Wide Range ◽  
Nanocomposite Thin Films

We report the synthesis of hybrid thin films based on polymethyl methacrylate) (PMMA) and polystyrene (PS) doped with 1%, 3%, 5%, and 7% of cerium dioxide nanoparticles (CeO2 NPs). The As-prepared thin films of (PMMA-PS) incorporated with CeO2 NPs are deposited on a glass substrate. The transmittance T% (λ) and reflectance R% (λ) of PMMA-PS/CeO2 NPs thin films are measured at room temperature in the spectral range (250–700) nm. High transmittance of 87% is observed in the low-energy regions. However, transmittance decreases sharply to a vanishing value in the high-energy region. In addition, as the CeO2 NPs concentration is increased, a red shift of the absorption edge is clearly observed suggesting a considerable decrease in the band gap energy of PMMA-PS/CeO2 NPs thin film. The optical constants (n and k) and related key optical and optoelectronic parameters of PMMA-PS/Ce NPs thin films are reported and interpreted. Furthermore, Tauc and Urbach models are employed to elucidate optical behavior and calculate the band gaps of the as-synthesized nanocomposite thin films. The optical band gap energy of PMMA-PS thin film is found to be 4.03 eV. Optical band gap engineering is found to be possible upon introducing CeO2 NPs into PMMA-PS polymeric thin films as demonstrated clearly by the continuous decrease of optical band gap upon increasing CeO2 content. Fourier-transform infrared spectroscopy (FTIR) analysis is conducted to identify the major vibrational modes of the nanocomposite. The peak at 541.42 cm−1 is assigned to Ce–O and indicates the incorporation of CeO2 NPs into the copolymers matrices. There were drastic changes to the width and intensity of the vibrational bands of PMMA-PS upon addition of CeO2 NPs. To examine the chemical and thermal stability, thermogravimetric (TGA) thermograms are measured. We found that (PMMA-PVA)/CeO2 NPs nanocomposite thin films are thermally stable below 110 °C. Therefore, they could be key candidate materials for a wide range of scaled multifunctional smart optical and optoelectronic devices.

Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1105 ◽  
pp. 74-77 ◽  
Author(s):  
Xiao Lin Ji ◽  
Hai Dong Ju ◽  
Tao Yu Zou ◽  
Jin Long Luo ◽  
Kun Quan Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Optical Band Gap ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sputtering Pressure

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.

scholarly journals N-образные вольт-амперные характеристики гибридных органических материалов на основе цинковых комплексов

2021 ◽  
Vol 47 (8) ◽  
pp. 3
Author(s):  
А.Н. Гусев ◽  
А.С. Мазинов ◽  
В.С. Гурченко ◽  
А.С. Тютюник ◽  
Е.В. Брага
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Infrared Spectroscopy ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Organic Materials ◽  
Zinc Complexes ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of hybrid organic materials C48H42N6O2Zn and C54H54N6O2Zn are researched. The method of obtaining, microscopy, as well as the results of infrared spectroscopy and studies of the electrical properties of the obtained thin films of these organic materials based on zinc complexes. The results of calculating the optical band gap are presented. It was found that the resulting thin-film structures have N-shaped current-voltage characteristics.

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