Fowler--Nordheim Tunneling at Sharp-Shaped Floating Gate Structure Modeled as Triangular Electrode

The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.

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Investigation on the Sensitivity Degradation of Dosimeters based on Floating Gate Structure

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) ◽

10.1109/radecs.2017.8696191 ◽

2017 ◽

Cited By ~ 1

Author(s):

M. Brucoli ◽

S. Danzeca ◽

J. Cesari ◽

M. Brugger ◽

A. Masi ◽

...

Keyword(s):

Floating Gate ◽

Gate Structure

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A Direct Tunneling Memory (DTM) utilizing novel floating gate structure

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824299 ◽

2003 ◽

Cited By ~ 2

Author(s):

N. Horiguchi ◽

T. Usuki ◽

K. Goto ◽

T. Futatsugi ◽

T. Sugii ◽

...

Keyword(s):

Floating Gate ◽

Direct Tunneling ◽

Gate Structure

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Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al2O3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

MRS Proceedings ◽

10.1557/proc-0933-g02-09 ◽

2006 ◽

Vol 933 ◽

Author(s):

Chang-Hyun Lee ◽

Changseok Kang ◽

Yoocheol Shin ◽

Jaesung Sim ◽

Jongsun Sel ◽

...

Keyword(s):

Energy Level ◽

Threshold Voltage ◽

Charge Trapping ◽

Memory Cell ◽

Floating Gate ◽

Hole Trap ◽

Hole Trapping ◽

High K ◽

Charge Trapping Memory ◽

Nordheim Tunneling

ABSTRACTWe present the TANOS (Si-Oxide-SiN-Al2O3-TaN) cell with 40 Å-thick tunnel oxide erased by Fowler-Nordheim (FN) tunneling of hole. Thanks to introducing high-k dielectrics, alumina (Al2O3) as a blocking oxide, the erase threshold voltage can be maintained to less than - 3.0 V, meaning hole-trapping in SiN. We extracted the nitride trap densities of electron and hole for the TANOS cell. It is demonstrated that the TANOS structure is very available to investigate the trap density with shallower energy. The energy level of hole trap (1.28 eV) is found to be deeper than that of electron (0.8 eV). As the cycling stress is performed, persistent hole-trapping is observed unlike endurance characteristics of conventional floating-gate cell. The hole trapping during the cycling stress can be attributed to two possibilities. The injected holes are trapped in neutral trap of tunnel oxide and residue of holes which is not somewhat compensated by injected electrons may be accumulated in SiN. It is demonstrated the erase operation of the TANOS cell is governed by Fowler-Nordheim tunneling of hole due to the field concentration across the tunnel oxide.

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