scholarly journals The use of atomic force microscopy to assess the quality of cleaning and tribometric properties of a silicon wafer surface

2019 ◽  
Vol 43 (3) ◽  
pp. 507-511
Author(s):  
I.D. Mikheev ◽  
F.Kh. Vakhitov
Keyword(s):  
Silicon Wafer ◽  
Relative Magnitude ◽  
Wafer Surface ◽  
Friction Forces ◽  
Small Areas ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wafer Surfaces ◽  
Adhesive Forces

Differences in the values of adhesive forces of interaction between the probe tip of an atomic force microscope and the cleaned surfaces of silicon wafers during their treatment with isopropyl alcohol and distilled water were investigated experimentally. It was shown that the presence of water molecules on the surface of the substrates leads to a significant (approximately 5 times) change in the value of these forces. It was found that the use of AFM allows the relative magnitude of friction forces in small areas of silicon wafer surfaces to be estimated.

CHARACTERIZATION OF SILICON WAFER SURFACES AFTER HYDROPHILIC AND HYDROPHOBIC TREATMENTS BY ATOMIC FORCE MICROSCOPY

2010 ◽  
Author(s):  
Xiaoning Xi ◽  
Jinjie Shi ◽  
Sahar Maghsoudy-Louyeh ◽  
Bernhard R. Tittmann ◽  
Donald O. Thompson ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Wafer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wafer Surfaces

Etching Performance Improvement On Semiconductor Silicon Wafers With Redesigned Etching Drum

2011 ◽  
Author(s):  
Rozzeta Dolah ◽  
Hamidon Musa ◽  
Astuty Amrin
Keyword(s):  
Surface Roughness ◽  
Performance Improvement ◽  
Silicon Wafer ◽  
Etching Process ◽  
Wafer Surface ◽  
Roughness Parameters ◽  
Force Microscopy ◽  
Atomic Force ◽  
Empty Slot ◽  
Empty Area

Proses etching atau punaran melibatkan pelbagai tindak balas kimia dan sangat penting dalam menentukan kualiti wafer silikon. Projek ini menyelesaikan masalah utama wafer ketika proses punaran, iaitu keserakan data pembuangan sisa wafer di sepanjang dram punaran. Cecair punaran yang digunakan dalam projek ini terdiri daripada komposisi asid HNO3, HF, and CH3COOH. Dram punaran telah diubahsuai untuk menyelesaikan masalah pembuangan sisa wafer yang rendah di setiap wafer pertama dan terakhir dalam sesuatu kompatmen dram. Tujuan utamanya adalah untuk mengurangkan jurang perbezaan variasi dalam pembuangan sisa wafer, di mana nilai pembuangan silicon adalah rendah berbanding pembuangan silicon wafer di tengah kompatmen. Antara cadangan tersebut adalah menambahkan "kepingan wafer PVC tahan asid" di sebelah wafer pertama dan terakhir dalam setiap kompatmen. Selepas memperoleh keputusan yang memberangsangkan, kepingan PVC tersebut dikekalkan dalam rekabentuk dram yang baru. Sifat wafer pertama dan terakhir dinilaikan untuk memastikan tiada kualiti yang terjejas berbanding wafer-wafer di tengah kompatmen. Morfologi permukaan dan kekasaran wafer (purata kekasaran;Ra dan kekasaran "skewness";Rms) menggunakan mikroskop tujahan atom (AFM) dianalisis untuk dibandingkan dengan dram lama. Keseragaman pembuangan wafer tanpa masalah pembuangan rendah di hujung kompatmen telah diperhatikan. Kata kunci: Proses punaran, permukaan "Micromachining", wafer silicon, pembuangan silicon wafer, kekasaran permukaan wafer silikon Etching process involves various chemical reactions and reflects significantly on the silicon wafer quality. The paper addresses the major problem on wafers during etching that is wafer removal distribution throughout etching drum compartment. The etchant used in this study were the composition of HNO3, HF, and CH3COOH. The etching drum has been redesigned to overcome the lower removal problem at the end of each compartment and to reduce the big disparity in wafer removal distribution. The proposed idea is to install a piece of "circumferential acid resistant PVC wafer" for the remaining empty slot (empty area without wafers) at each end of a compartment. The permanent PVC piece with certain gap at each end is then fabricated for the new drum design. The characteristics of the end wafers are compared with other wafers in the compartment to study the etching difference that leads to this problem. Surface morphology and surface roughness parameters (arithmetic roughness mean; Ra and surface skewness [roughness root mean square]; Rms) using atomic force microscopy (AFM) comparison between old drum design (big wafer gap) and new drum design (smaller gap with additional PVC chip) had been analyzed. The uniformity without lower removal problem at the end compartment is observed in removal distribution graph. Key words: Etching process; surface micromachining; silicon wafer; etching removal; silicon wafer surface roughness

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Observation in the Surface Roughness of Silicon Wafer during Semi-Fixed Abrasive Machining with Large Grains

2009 ◽  
Vol 69-70 ◽  
pp. 253-257
Author(s):  
Ping Zhao ◽  
Jia Jie Chen ◽  
Fan Yang ◽  
K.F. Tang ◽  
Ju Long Yuan ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Processing Parameters ◽  
Wafer Surface ◽  
Abrasive Machining ◽  
Fixed Abrasive ◽  
Is Failure ◽  
Better Than

Semi-fixed abrasive is a novel abrasive. It has a ‘trap’ effect on the hard large grains that can prevent defect effectively on the surface of the workpiece which is caused by large grains. In this paper, some relevant experiments towards silicon wafers are carried out under the different processing parameters on the semi-fixed abrasive plates, and 180# SiC is used as large grains. The processed workpieces’ surface roughness Rv are measured. The experimental results show that the surface quality of wafer will be worse because of higher load and faster rotating velocity. And it can make a conclusion that the higher proportion of bond of the plate, the weaker of the ‘trap’ effect it has. Furthermore the wet environment is better than dry for the wafer surface in machining. The practice shows that the ‘trap’ effect is failure when the workpiece is machined by abrasive plate which is 4.5wt% proportion of bond in dry lapping.

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

2003 ◽  
Vol 788 ◽  
Author(s):  
R. Job ◽  
Y. Ma ◽  
A. G. Ulyashin
Keyword(s):  
Hydrogen Plasma ◽  
Structural Defects ◽  
Process Conditions ◽  
Force Microscopy ◽  
Czochralski Silicon ◽  
Atomic Force ◽  
Nano Structures ◽  
Plasma Treatments ◽  
The Impact ◽  
Wafer Surfaces

ABSTRACTHydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

Mechanical Interlocking on Leadframe Surface for Bondability of Au Wedge Bond

2016 ◽  
Vol 857 ◽  
pp. 79-82
Author(s):  
Roslina Ismail ◽  
Fuaida Harun ◽  
Azman Jalar ◽  
Shahrum Abdullah
Keyword(s):  
Optical Microscope ◽  
Bonding Process ◽  
Mechanical Interlocking ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies ◽  
Scanning Electron ◽  
Effect Of Surface

This work is a contribution towards the understanding of wire bond integrity and reliability in relation to their microstructural and mechanical properties in semiconductor packaging.The effect of surface roughness and hardness of leadframe on the bondability of Au wedge bond still requires detail analysis. Two type of leadframes namely leadframe A and leadframe B were chosen and scanning electron microscope (SEM) and optical microscope were used to inspect the surface morphology of leadframes and the quality of created Au wedge bond after wire bonding process. It was found that there were significant differences in the surface morphologies between these two leadframes. The atomic force microscopy (AFM) which was utilized to measure the average roughness, Ra of lead finger confirms that leadframe A has the highest Ra with value of 166.46 nm compared to that of leadframe B with value of 85.89 nm. While hardness value of different lead finger from the selected leadframe A and B obtained using Vicker microhardness tester are 180.9 VH and 154.2VH respectively.

scholarly journals Osteoblast-Like Cell Behavior on Porous Scaffolds Based on Poly(styrene) Fibers

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Andrada Serafim ◽  
Romain Mallet ◽  
Florence Pascaretti-Grizon ◽  
Izabela-Cristina Stancu ◽  
Daniel Chappard
Keyword(s):  
Interference Microscopy ◽  
Porous Scaffolds ◽  
Allogenic Bone ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dry Spinning ◽  
Bone Trabeculae ◽  
Large Bone

Scaffolds of nonresorbable biomaterials can represent an interesting alternative for replacing large bone defects in some particular clinical cases with massive bone loss. Poly(styrene) microfibers were prepared by a dry spinning method. They were partially melted to provide 3D porous scaffolds. The quality of the material was assessed by Raman spectroscopy. Surface roughness was determined by atomic force microscopy and vertical interference microscopy. Saos-2 osteoblast-like cells were seeded on the surface of the fibers and left to proliferate. Cell morphology, evaluated by scanning electron microscopy, revealed that they can spread and elongate on the rough microfiber surface. Porous 3D scaffolds made of nonresorbable poly(styrene) fibers are cytocompatible biomaterials mimicking allogenic bone trabeculae and allowing the growth and development of osteoblast-like cellsin vitro.

A Boost-Up Method of MEMS-Bulk-Micromachining towards C-MEMS Fabrication for Sensing and Manipulating Bioparticles

2011 ◽  
Vol 316-317 ◽  
pp. 59-67
Author(s):  
M. Rizwan Malik ◽  
Tie Lin Shi ◽  
Zi Rong Tang ◽  
M. Haseeb
Keyword(s):  
Silicon Wafer ◽  
Three Dimensional ◽  
Wafer Surface ◽  
Main Concern ◽  
Mems Fabrication ◽  
Technological Field ◽  
Broad Concept ◽  
Silicon Cantilever ◽  
Wafer Surfaces ◽  
Comprehensive Study

Much of the recent ongoing advanced research into the quest for improved etching techniques has brought forth a broad concept for the fabrication of micro/nano-electromechanical systems (MEMS/NEMS) having high accuracy, precision, efficiency, compatibility and through-put of metallic- as well as carbon-composition structural phases. This in turn leads towards a thorough understanding of the sensing, trapping, separating, controlling, positioning, directing, concentrating and manipulating of micro-nano-sized particles - predominantly biological particles - in the emerging MEMS/NEMS technological field. This paper focuses its attention on the easiest means of wet-etching {100}-type silicon wafer surfaces by guiding the choice of [<100> or <010>] orientation (at 45° to the normal orientation). This anisotropic etching is performed in KOH solution. Here, consideration is not concerned to a large extent with process parameters as in anodic oxidation, an intensely doped boron etching stops and silicon wafer surface back-etching. The main concern of the present practical application route involves a passivating material (silicon dioxide, SiO2) and two masking stages (for a two-step etching process). As a example of this method, silicon cantilever beams having vertical edges are produced. It is concluded that the method presented will be helpful in the comprehensive study of resonators, pressure/temperature sensors, three-dimensional carbon micro-electrodes, actuators and accelerometers for bioparticle applications.

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