Influence of In-Situ Annealing of Si-Rich Silicon Carbide Thin Films

2018 ◽  
Vol 34 (3-4) ◽  
pp. 116-120
Author(s):  
Sam Baskar ◽  
Pratibha Nalini ◽  
◽  
Keyword(s):  
Thin Films ◽  
Silicon Carbide

Role of Ions in Bias Enhanced Nucleation of Diamond

1995 ◽  
Vol 388 ◽  
Author(s):  
J.M. Lannon ◽  
J.S. Gold ◽  
Cd. Stinespring
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Surface Composition ◽  
Hydrogen Ions ◽  
Ion Energy ◽  
Transfer Processes ◽  
Ion Interactions ◽  
Ion Energies

AbstractIon-surface interactions are thought to play a role in bias enhanced nucleation of diamond. To explore this hypothesis and understand the mechanisms, surface studies of hydrogen and hydrocarbon ion interactions with silicon and silicon carbide have been performed. the experiments were carried out at room temperature and used in-situ auger analyses to monitor the surface composition of thin films produced or modified by the ions. Ion energies ranged from 10 to 2000 eV. Hydrogen ions were found to modify silicon carbide thin films by removing silicon and converting the resulting carbon-rich layers to a mixture of sp2- and sp3-C. the interaction of hydrocarbon ions with silicon was shown to produce a thin film containing SiC-, sp2-, and sp3-C species. IN general, the relative amount of each species formed was dependent upon ion energy, fluence, and mass. the results of these studies, interpreted in terms of chemical and energy transfer processes, provide key insights into the mechanisms of bias enhanced nucleation.

Deposition of Mesoporous Silicon Carbide Thin Films from (Me3Si)4Sn: Tin Nanoparticles as in Situ Generated Templates

2007 ◽  
Vol 19 (22) ◽  
pp. 5250-5255 ◽  
Author(s):  
Chia-Hsin Wang ◽  
Wen-Yih Shen ◽  
Pei-Sun Sheng ◽  
Chi-Young Lee ◽  
Hsin-Tien Chiu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Mesoporous Silicon ◽  
Tin Nanoparticles

Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition

2009 ◽  
Vol 95 (10) ◽  
pp. 101901 ◽  
Author(s):  
Wei-Cheng Lien ◽  
Nicola Ferralis ◽  
Albert P. Pisano ◽  
Carlo Carraro ◽  
Roya Maboudian
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Growth ◽  
Cubic Silicon Carbide

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

MOCVD and properties of in situ doped Pt-SnO2 thin films

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-643-Pr8-650 ◽  
Author(s):  
M. Amjoud ◽  
F. Maury
Keyword(s):  
Thin Films ◽  
Sno2 Thin Films

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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