Role of Ions in Bias Enhanced Nucleation of Diamond

1995 ◽  
Vol 388 ◽  
Author(s):  
J.M. Lannon ◽  
J.S. Gold ◽  
Cd. Stinespring
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Surface Composition ◽  
Hydrogen Ions ◽  
Ion Energy ◽  
Transfer Processes ◽  
Ion Interactions ◽  
Ion Energies

AbstractIon-surface interactions are thought to play a role in bias enhanced nucleation of diamond. To explore this hypothesis and understand the mechanisms, surface studies of hydrogen and hydrocarbon ion interactions with silicon and silicon carbide have been performed. the experiments were carried out at room temperature and used in-situ auger analyses to monitor the surface composition of thin films produced or modified by the ions. Ion energies ranged from 10 to 2000 eV. Hydrogen ions were found to modify silicon carbide thin films by removing silicon and converting the resulting carbon-rich layers to a mixture of sp2- and sp3-C. the interaction of hydrocarbon ions with silicon was shown to produce a thin film containing SiC-, sp2-, and sp3-C species. IN general, the relative amount of each species formed was dependent upon ion energy, fluence, and mass. the results of these studies, interpreted in terms of chemical and energy transfer processes, provide key insights into the mechanisms of bias enhanced nucleation.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

In-situ generation of graphene network in silicon carbide fibers: Role of iodine and carbon monoxide

Carbon ◽  
2020 ◽  
Vol 158 ◽  
pp. 110-120
Author(s):  
Junsung Hong ◽  
Youngjin Ko ◽  
Kwang-Yeon Cho ◽  
Dong-Geun Shin ◽  
Prabhakar Singh ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Silicon Carbide ◽  
Silicon Carbide Fibers ◽  
In Situ Generation

In situ monitoring the role of citrate in chemical bath deposition of PbS thin films

CrystEngComm ◽  
2016 ◽  
Vol 18 (1) ◽  
pp. 149-156 ◽  
Author(s):  
Sucheta Sengupta ◽  
Maayan Perez ◽  
Alexander Rabkin ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Light Scattering ◽  
Optical Absorption ◽  
Chemical Bath Deposition ◽  
Trisodium Citrate ◽  
In Situ Monitoring ◽  
Cluster Mechanism ◽  
Absorption Measurements

We report the formation of size tunable PbS nanocubes induced by the presence of trisodium citrate during growth of PbS thin films by chemical bath deposition. The presence of citrate induces growth by the cluster mechanism which is monitored by XRD and HRSEM, along with real time light scattering and optical absorption measurements.

Dry Etching of MRAM Structures

2000 ◽  
Vol 614 ◽  
Author(s):  
S.J. Pearton ◽  
H. Cho ◽  
K.B. Jung ◽  
J.R. Childress ◽  
F. Sharifi ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Significant Influence ◽  
Ex Situ ◽  
Metallic Multilayers ◽  
Ion Energy ◽  
Magnetic Performance ◽  
Ion Energies ◽  
Density Plasma ◽  
Cleaning Protocol

ABSTRACTA wide variety of GMR and CMR materials have been patterned by high density plasma etching in both corrosive (Cl2-based) and non-corrosive (CO/NH3) plasma chemistries. The former produce much higher etch rates but require careful in-situ or ex-situ, post-etch cleaning to prevent corrosion of the metallic multilayers. The former may have application for shallow etching of NiFe-based structures, but there is little chemical contribution to the etch mechanism and mask erosion can be a problem. The magnetic performance of patterned MRAM elements is stable over long periods (>1 year) after etching in Cl2 plasmas, provided a suitable cleaning protocol is followed. It is also clear that high ion energies during patterning of magnetic materials can have a significant influence on their coercivity. The effects of ion energy, ion flux and process temperature are discussed.

scholarly journals Mechanisms of Silicide Formation by Reactive Diffusion in Thin Films

2019 ◽  
Vol 21 ◽  
pp. 1-28
Author(s):  
Dominique Mangelinck
Keyword(s):  
Thin Films ◽  
Diffusion Reaction ◽  
Reactive Diffusion ◽  
Physical Parameters ◽  
Lateral Growth ◽  
Silicide Formation ◽  
In Situ Techniques ◽  
Mechanisms Of Formation

Silicide formation by reactive diffusion is of interest in numerous applications especially for contact formation and interconnections in microelectronics. Several reviews have been published on this topic and the aim of this chapter is to provide an update of these reviews by focusing on new experiment results. This chapter presents thus some progress in the understanding of the main mechanisms (diffusion/reaction, nucleation, lateral growth…) for thin and very thin films (i.e. comprised between 4 and 50 nm). Recent experimental results on the mechanisms of formation of silicide are presented and compared to models and/or simulation in order to extract physical parameters that are relevant to reactive diffusion. These mechanisms include nucleation, lateral growth, diffusion/interface controlled growth, and the role of a diffusion barrier. The combination of several techniques including in situ techniques (XRD, XRR, XPS, DSC) and high resolution techniques (APT and TEM) is shown to be essential in order to gain understanding in the solid state reaction in thin films and to better control these reaction for making contacts in microelectronics devices or for other application.

Microstructure and Densification of Sintered (B+C)-Doped β-Silicon Carbide

1993 ◽  
Vol 327 ◽  
Author(s):  
Wolfgang Braue ◽  
Hans-J. Kleebe ◽  
Carsten Wehling
Keyword(s):  
Silicon Carbide ◽  
Phase Transformation ◽  
Surface Layer ◽  
Preliminary Data ◽  
Combined Approach ◽  
Early Stages ◽  
Α Phase ◽  
Powder Particles

AbstractThe role of boron and carbon during densification of sintered β-SiC was investigated through the combined approach of in-situ dilatometry and CTEM/AEM inspection of TEM-foils referring to well-defined densification events. Preliminary data obtained indicate that in the early stages of densification, boron is not enriched in the continuous carbon-rich surface layer covering the β-SiC powder particles nor does it segregate to internal interfaces in high quantities. Small boron quantities are dissolved in the SiC grains- Simultaneously with the β- to α- phase transformation, decomposition of foam-like B4C aggregates releases small B4C particles, which are bound intragranularly to α-SiC.

Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 247-252
Author(s):  
Narasimhan Srinivasan ◽  
Katrina Rook ◽  
Ivan Berry ◽  
Binyamin Rubin ◽  
Frank Cerio
Keyword(s):  
Beam Energy ◽  
Etch Rate ◽  
Incidence Angle ◽  
Ion Beam ◽  
Ion Energy ◽  
Beam Voltage ◽  
Ion Energies ◽  
Sidewall Angle ◽  
Etch Rates

ABSTRACTWe investigate the feasibility of inert ion beam etch (IBE) for subtractive patterning of ReRAM-type structures. We report on the role of the angle-dependent ion beam etch rates in device area control and the minimization of sidewall re-deposition. The etch rates of key ReRAM materials are presented versus incidence angle and ion beam energy. As the ion beam voltage is increased, we demonstrate a significant enhancement in the relative etch rate at glancing incidence (for example, by a factor of 2 for HfO2). Since the feature sidewall is typically exposed to glancing incidence, this energy-dependence plays a role in optimization of the feature shape and in sidewall re-deposition removal.We present results of SRIM simulations to estimate depth of ion-bombardment damage to the TMO sidewall. Damage is minimized by minimizing ion energy; its depth can be reduced by roughly a factor of 5 over typical IBE energy ranges. For example, ion energies of less than ∼250 eV are indicated to maintain damage below ∼1nm. Multi-angle and multi-energy etch schemes are proposed to maximize sidewall angle and minimize damage, while eliminating re-deposition across the TMO. We utilize 2-D geometry/3-D etch model to simulate IBE patterning of tight-pitched ReRAM features, and generate etched feature shapes.

Preparation of molybdenum nitride thin films by N+ ion implantation

1992 ◽  
Vol 7 (2) ◽  
pp. 374-378 ◽  
Author(s):  
J-G. Choi ◽  
D. Choi ◽  
L.T. Thompson
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Substrate Surface ◽  
Molybdenum Nitride ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Ion Channeling ◽  
Ion Energies ◽  
Nitrogen Ions ◽  
Nitrogen Ion

A series of molybdenum nitride films were synthesized by implanting energetic nitrogen ions into molybdenum thin films. The resulting films were characterized using x-ray diffraction to determine the effects of nitrogen ion dose (4 × 1016−4 × 1017 N+/cm2), accelerating voltage (50–200 kV), and target temperature (∼298–773 K) on their structural properties. The order of structural transformation with increased incorporation of nitrogen ions into the Mo film can be summarized as follows: Mo → γ−Mo2N → δ−MoN. Nitrogen incorporation was increased by either increasing the dose or decreasing the ion energy. At elevated target temperatures the metastable B1–MoN phase was also produced. In most cases the Mo nitride crystallites formed with the planes of highest atomic density parallel to the substrate surface. At high ion energies preferential orientation developed so that the more open crystallographic directions aligned with the ion beam direction. We tentatively attributed this behavior to ion channeling effects.

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