Relation of instability of electric magnetic system current and accelerating voltage at the electron-beam gun

Rare-earth permanent magnets are widely used in the accelerators of charged particles. However, the magnetic performance under irradiation remains a key issue for the most high energy applications such as accelerators with the energy up to 10 MeV. The aim of the work was to assess radiation and magnetic stability of Sm-Co and Nd-Fe-B permanent magnets under the direct electron irradiation with the energy of 10 MeV and bremsstrahlung. Sm-Co and Nd-Fe-B permanent magnets were produced by powder metallurgy method including PLP for the latter. The absorbed dose imposed by electron beam was 16 Grad (the total flux of electron per 1 cm2 was 1.4х1017) and 160 Grad. The radiation activity of both Nd-Fe-B and Sm-Co magnets was within the acceptable limits after the irradiation. This makes rare-earth magnetic materials suitable for such applications. In order to avoid overheating during electron irradiation, magnets were cooled with the water (T=38 °С). In order to estimate the changes in magnetic flux, the integral of the 3D interpolation normal component of magnetic flux was used. Calculated S parameter measured in arbitrary units was chosen as integrated z-component of magnetic flux. It was shown that magnetic flux of Nd-Fe-B magnets became 0.92 and 0.717 of initial values for 16 Grad and 160 Grad correspondingly, but the magnetic flux of Sm-Co magnets had no change to the same absorbed doses. Thus, Sm-Co magnets were chosen for simulating and designing magnetic system for electron beam analysis of a technological accelerator with energy up to 10 MeV. The distance between the poles of the magnet was 25.25 mm. The highest magnetic field inside the magnetic system was 0.3110 T. The effective distance was 33.53 mm. The measured parameters of the magnetic system based on Sm-Co magnets agreed with the simulation experiment. Magnetic system can also be used to adjust the accelerator in the energy range up to 10 MeV.

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Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100065079 ◽

1971 ◽

Vol 29 ◽

pp. 204-205

Author(s):

G. G. Shaw

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Aluminum Alloy ◽

Electron Beam ◽

Pure Aluminum ◽

Ion Milling ◽

Transmission Electron ◽

Fiber Matrix ◽

Ion Erosion ◽

Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100053188 ◽

1982 ◽

Vol 40 ◽

pp. 78-79

Author(s):

Kenneth H. Downing ◽

Robert M. Glaeser

Keyword(s):

Electron Beam ◽

Fatty Acid ◽

Inelastic Scattering ◽

Temperature Dependence ◽

Structural Damage ◽

Direct Result ◽

Second Step ◽

Strong Temperature Dependence ◽

Electron Dose ◽

Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Domain Formation in Synthetic Quartz

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100064839 ◽

1971 ◽

Vol 29 ◽

pp. 156-157

Author(s):

Joseph J. Comer

Keyword(s):

Electron Beam ◽

Room Temperature ◽

Domain Formation ◽

Synthetic Quartz ◽

Transmission Electron ◽

Black Spots ◽

Diffraction Mode ◽

Domain Boundaries ◽

Kikuchi Lines ◽

Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

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Materials for Electron Beam Information Storage

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100062671 ◽

1969 ◽

Vol 27 ◽

pp. 152-153 ◽

Cited By ~ 1

Author(s):

D. E. Speliotis

Keyword(s):

Magnetic Field ◽

Electron Beam ◽

Recent Literature ◽

Electron Beams ◽

Information Storage ◽

The Subject ◽

The Magnetic Field

The interaction of electron beams with a large variety of materials for information storage has been the subject of numerous proposals and studies in the recent literature. The materials range from photographic to thermoplastic and magnetic, and the interactions with the electron beam for writing and reading the information utilize the energy, or the current, or even the magnetic field associated with the electron beam.

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Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100072666 ◽

1973 ◽

Vol 31 ◽

pp. 444-445

Author(s):

P.J. Killingworth ◽

M. Warren

Keyword(s):

Electron Beam ◽

Organic Materials ◽

Operating Parameters ◽

Low Density ◽

Beam Diameter ◽

Incident Electron Beam ◽

Specimen Material ◽

Voltage Compensation ◽

Selection Of ◽

Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

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