scholarly journals Extension of the Stoney Equation for a Taiko Wafer (Si and SiC)

2020 ◽  
Author(s):  
Antonio Landi ◽  
Vincenzo Vinciguerra
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Wide Band ◽  
Theory Of Elasticity ◽  
Back Side ◽  
Wide Band Gap ◽  
Elastic Regime ◽  
Stoney Formula ◽  
Metal Layers ◽  
Strong Extension

An extension of the Stoney formula for the case of a back side metallized 8” silicon taiko wafer has been developed, in the elastic regime, within the frame of the theory of elasticity. A good correlation between the calculated warpage, determined by the stress released by a given back side metallization (BSM), and the corresponding experimental warpages of the same thick metal layers deposited on an 8” silicon taiko wafer provides evidences of the correctness of the developed theory. This development suggests the possibility to extend this approach to the case of 8” taiko wafers based on a wide band gap semiconductor such as silicon carbide (SiC).

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material

2016 ◽  
Vol 144 ◽  
pp. 551-558 ◽  
Author(s):  
J. López-Vidrier ◽  
P. Löper ◽  
M. Schnabel ◽  
S. Hernández ◽  
M. Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Silicon Nanocrystals ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Material

Predictive & Prognostic Controller for Wide Band Gap (Silicon Carbide) Power Conversion

2007 ◽  
Author(s):  
Gregg Davis ◽  
Leo Casey ◽  
Mark Prestero ◽  
Kirby Keller ◽  
Jim Sheahan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Power Conversion ◽  
Wide Band ◽  
Wide Band Gap

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

2010 ◽  
Vol 645-648 ◽  
pp. 753-758 ◽  
Author(s):  
Marcin Zielinski ◽  
Catherine Moisson ◽  
Sylvain Monnoye ◽  
Hugues Mank ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Polycrystalline Material ◽  
State Of The Art ◽  
Surface Preparation ◽  
Wide Band ◽  
The State ◽  
Wide Band Gap ◽  
Made In ◽  
High Output

In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by Vicente et al) of an ultimate preparation of Si-face -SiC wafers some important progresses were made in the field of surface preparation of silicon carbide and related materials. This concerns the industrial, high output treatments of substrates of increasing size, as well as the research studies of the feasibility of new preparation approaches for wide band gap materials. We also discuss the problems related to the polishing of the polycrystalline material and to the planarization of epilayers.

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