Silicon carbide in a silicon world: introducing wide band gap semiconductor production into a silicon fab

2004 ◽  
Author(s):  
J. Shovlin ◽  
R. Woodin ◽  
T. Witt
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Semiconductor Production

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material

2016 ◽  
Vol 144 ◽  
pp. 551-558 ◽  
Author(s):  
J. López-Vidrier ◽  
P. Löper ◽  
M. Schnabel ◽  
S. Hernández ◽  
M. Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Silicon Nanocrystals ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Material

Predictive & Prognostic Controller for Wide Band Gap (Silicon Carbide) Power Conversion

2007 ◽  
Author(s):  
Gregg Davis ◽  
Leo Casey ◽  
Mark Prestero ◽  
Kirby Keller ◽  
Jim Sheahan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Power Conversion ◽  
Wide Band ◽  
Wide Band Gap

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

2010 ◽  
Vol 645-648 ◽  
pp. 753-758 ◽  
Author(s):  
Marcin Zielinski ◽  
Catherine Moisson ◽  
Sylvain Monnoye ◽  
Hugues Mank ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Polycrystalline Material ◽  
State Of The Art ◽  
Surface Preparation ◽  
Wide Band ◽  
The State ◽  
Wide Band Gap ◽  
Made In ◽  
High Output

In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by Vicente et al) of an ultimate preparation of Si-face -SiC wafers some important progresses were made in the field of surface preparation of silicon carbide and related materials. This concerns the industrial, high output treatments of substrates of increasing size, as well as the research studies of the feasibility of new preparation approaches for wide band gap materials. We also discuss the problems related to the polishing of the polycrystalline material and to the planarization of epilayers.

SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

2006 ◽  
Vol 16 (03) ◽  
pp. 825-854 ◽  
Author(s):  
DIETRICH STEPHANI ◽  
PETER FRIEDRICHS
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Wide Band Gap ◽  
The Status ◽  
Alternative Solutions ◽  
Application Specific ◽  
Comprehensive Discussion

The chapter will give an overview about the theory of JFETs with special attention to the wide band gap issues related to SiC. After a comprehensive discussion of relevant structures and topologies experimental results are presented and discussed. Especially vertical structures are in the focus of this chapter. Characteristic I-V data will be shown as well as application specific solutions regarding the temperature behavior or the ruggedness of the devices. The status of the JFETs technology will be judged and compared to alternative solutions like MOSFEts or lateral JFETs. Finally, an outlook will be given regarding targeted applications for SiC VJFETs and the resulting requirements as targets for future improvements.

Sign in / Sign up

Export Citation Format

Share Document