scholarly journals Structural, Morphological, Optical, Luminescent and Magnetic Properties of Nanostructured ZnO Thin Film

2021 ◽  
Author(s):  
Visweswaran S ◽  
R. Venkatachalapathy ◽  
M. Haris ◽  
R. Murugesan
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Visible Region ◽  
Ultra Violet ◽  
Annealed Film ◽  
Zno Films ◽  
Ferromagnetic Behavior ◽  
Spectroscopic Techniques ◽  
Zno Film ◽  
Morphological Studies

Abstract ZnO thin film deposited on the glass substrate at various substrate temperature by spray technique using perfume atomizer. The deposited ZnO thin films are annealed at 450ºC. The deposited films are highly transparent and adhered to the substrate. The structure and microstructural, morphological, compositional, optical and luminescent characteristics were studied by X-ray diffraction (XRD), Raman, Field emission scanning electron microscope (FE-SEM with EDX), Atomic force microscope (AFM), Ultra violet visible spectrophotometer (UV-Vis) and photoluminescence spectroscopic techniques. The crystalline nature of annealed film were confirmed from XRD and the shows preferred orientation along (1 0 1) plane. At higher substrate temperature, reorientation of planes was seen. The spherical shaped grains are observed from morphological studies. The roughness of ZnO film, one of the key parameter obtained from AFM, increases with substrate temperature. The high transparency of about 80% in visible region are obtained for ZnO film with band gap ranging from 3.24 – 3.19 eV. The presence of defects in ZnO films are identified from PL bands. The electronic vibrations in ZnO film were understood from Raman spectra. The weak ferromagnetic behavior at room temperature is observed and exchange interactions stemming from oxygen vacancy produce BMP and subject to RTFM in ZnO.

Thickness Effect of Zno Film on the Performance of Photocatalytic in a p-Nio/n-Zno Heterostructure under Solar Light Irradiation

2020 ◽  
Vol 62 ◽  
pp. 87-95
Author(s):  
Hichem Farh ◽  
Abdelouahab Noua ◽  
Rebai Guemini ◽  
Djamal Eldine Guitoume ◽  
Oussama Zaoui
Keyword(s):  
Methylene Blue ◽  
Photocatalytic Activity ◽  
Degradation Rate ◽  
Visible Region ◽  
Light Irradiation ◽  
Thickness Effect ◽  
Solar Light ◽  
Zno Films ◽  
Zno Film ◽  
Solar Light Irradiation

In this work, we studied the ZnO film thickness effect on the photocatalytic performance of n-ZnO/p-NiO heterostructures. The ZnO and NiO films were prepared by sol-gel dip-coating technique and the thickness of the ZnO film was varied by changing the number of coatingsfrom 2 to12. The formation of the p-NiO/n-ZnO heterostructure was confirmed by X ray diffraction (XRD). The obtained ZnO films present a wurtzite structure with a preferred orientation along (002) direction while the NiO film present a cubic structure highly oriented along (200) direction. UV-visible transmittance spectra of the prepared heterostructures revealed a good transparency in the visible region. The photocatalytic propertiesof the n-ZnO/p-NiO heterostructures were investigated by measuring the degradation rate of methylene blue. All the samples exhibit a good photocatalytic activity under solar light irradiation. The photocatalytic activity of p-NiO/n-ZnO heterostructureswas strongly correlated with the number of ZnO coatings. The highest photocatalytic activity was obtained at 6 coatings with a degradation rate of methylene blue equal to 98.67% for 4.5h of irradiation.

Investigation on the Effect of the Substrate Temperature on the Photoelectric Properties of the Ga Doped ZnO Film

2016 ◽  
Vol 852 ◽  
pp. 1066-1069 ◽  
Author(s):  
Hong Tao Zhao ◽  
Yi Qiao Shi ◽  
Min Tian
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Silica Glass ◽  
Visible Region ◽  
Zno Film ◽  
Photoelectric Properties ◽  
Doped Zno

The Ga doped ZnO film (GZO) was fabricated via magnetron sputtering on the substrate of silica glass. The effect of substrate temperature on the photoelectric properties of GZO film, such as morphology, grain size, crystal structure and transparency was studied. The results showed us that the crystallinity of GZO film was improved by increasing the substrate temperature . The GZO film exhibited high transmittance (above 80% in the visible region) at the substrate temperature higher than 200°C. The lowest resistivity of 4.45×10-4Ω·cm and highest hall mobility of 11.7 cm2 v-1s-1 were obtained when the substrate temperature was 300°C.

Substrate Temperature Effects of the ZnO:AlF3Transparent Conductive Oxide

2013 ◽  
Vol 1494 ◽  
pp. 91-97
Author(s):  
Tien-Chai Lin ◽  
Wen-Chang Huang ◽  
Chin-Hung Liu ◽  
Shang-Chou Chang
Keyword(s):  
Substrate Temperature ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Thermal Effects ◽  
Rf Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Film

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.

scholarly journals Optical and Structural investigations of LiNbO3 thin films by PLD

2020 ◽  
pp. 17-23
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Energy Gap ◽  
Ultra Violet ◽  
Raw Material ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Optical Energy Gap ◽  
Structural Investigations ◽  
X Ray

Lithium niobate (LiNbO3) nanostructure thin film was prepared and deposited on the substrates made of quartz by utilizing pulse laser deposition (PLD) technique. The effect of substrate temperature changing on the optical and structural properties of LiNbO3 films was investigated and studied. The chemical mixture was prepared by mixing the raw material (Li2CO3, Nb2O5) with Ethanol liquid without any further purification, at the stirrer time 3hrs without heating, then the formed material was overexposed to annealing process at 1000°C for 4hrs. LiNbO3 nanostructure thin film was characterized and analyzed by utilizing the Ultra-Violet visible (UV-vis) and X-Ray Diffraction (XRD). The UV-vis results showed that the increase in the substrate temperature to 300°C leads to decrease in the values of transmission (T%), absorption (A) and optical energy gap (Eg) and increase in the values of reflection (R%) and refractive index (n). While, the XRD results explained that the LiNbO3 structure became more pure and crystalline with increase the substrate temperature, because the intensity of the phase 2θ at the value of 34.8°, 40.06° and 48.48° correspond to (110), (113) and (024) planes disappeared at the substrate temperature 300°C. So, all presented results give a good indication to use LiNbO3 nanostructure thin film prepared at the substrate temperature 300°C for manufacturing the optical waveguide to give the best results.

Sensitivity to NO2 of ZnO Film Prepared by Electrostatic-Enhanced Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 299-300 ◽  
pp. 475-479 ◽  
Author(s):  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Bin Wang ◽  
Yue Zhao ◽  
Yun Guo ◽  
...  
Keyword(s):  
Dynamic Response ◽  
Substrate Temperature ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Zno Film ◽  
Doping Amount ◽  
Sensing Properties ◽  
Al Content ◽  
Ultrasonic Spray ◽  
Ag Film

The NO2-sensing properties of the ZnO films prepared by EUSP were investigated. Effect of substrate temperature on the NO2-sensing properties of ZnO films showed that the powder-like ZnO film deposited at 550°C was more sensitive to NO2, and the film illustrated good response-restoration property. Besides, the influence of doping amount on the NO2-sensing properties of the ZnO films at 260°C showed that the ZnO:Al film with the Al content of 0.4mol% presented the best sensitivity, and the ZnO: 3mol % Ag exhibited the highest NO2 sensitivity. The dynamic response tests indicated that the ZnO: Al film was of the highest sensitivity to NO2, and the sensitivity of ZnO: Ag film was lowest.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 567-570
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Young Joon Cho ◽  
Hyoun Woo Kim ◽  
Jae Gab Lee
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Films ◽  
Zno Thin Film ◽  
Zno Film ◽  
Amorphous Sio2 ◽  
Si Substrates

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Effect of Microstructure on the Sheet Resistance of Ion-Beam Deposited ZnO Thin Film

1988 ◽  
Vol 128 ◽  
Author(s):  
Saliman A. Isa ◽  
P. K. Ghosh ◽  
P. G. Kornreich
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Substrate Temperatures

ABSTRACTZnO thin films were deposited by ion-beam sputtering technique. Preliminary results show that the films are stoichiometric and crystalline in nature. The microstructure of ZnO films obtained depends very much on the process parameters. Among these parameters is the substrate temperature whose effect has been carefully examined.ZnO films were deposited with substrate temperatures ranging from 200°C to 350°C. We observed that the sheet resistance of the films varies with their microstructure. In this investigation, a sheet resistance of 6.6 Mega-ohms per square is measured on a dense film deposited at a substrate temperature of 325°C.We present in this paper a correlation between the film's microstructure and stoichiometry with some of it's electrical properties.

Synthesis, Characterization and Hall Effect Measurements of Nanocrystalline ZnO Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Morphological Studies ◽  
Hall Effect Measurements ◽  
Scherrer Formula

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.

Influence of Zinc Oxide Nanoparticles on the Optical, Dielectric and Electromagnetic Interference Shielding Performance of Polystyrene Films

2020 ◽  
Vol 8 (1) ◽  
pp. 13-24
Author(s):  
B. J. Madhu ◽  
Mohammed Irfan ◽  
A. Manjunath ◽  
N. P. Divya ◽  
S. S. Mahesh ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electromagnetic Interference ◽  
Optical Band Gap ◽  
Nanocomposite Films ◽  
Zno Films ◽  
Spectroscopic Techniques ◽  
Shielding Effectiveness ◽  
Zno Film ◽  
Optical Dielectric ◽  
Hopping Model

In the present work, Zinc oxide (ZnO) nanoparticles are synthesized using solvothermal technique. Polystyrene-ZnO (PS/ZnO) nanocomposite films are synthesized by solution casting procedure. PS/ZnO films are analyzed by XRD, FTIR and UV-Vis spectroscopic techniques. The addition of ZnO into the PS film is found to decrease the optical band gap (OBG) from 4.07 eV to 1.86 eV. Frequency dependence of dielectric constant (ε′), loss tangent (tanδ), ac conductivity (σac) and electromagnetic (EM) interference shielding effectiveness (SE) studies have been undertaken on the pure PS and PS/ZnO films. Insertion of ZnO into pure PS polymer matrix is found to enhance ε′, tanδ, σac, and SE considerably. The ε′ and tanδ were reduced with an enhancement in the frequency. σac of PS/ZnO nanocomposites was enhanced with rise in frequency and electrical conduction process in PS/ZnO film is in agreement with an electron-hopping model. EM interference SE is reduced with rise in the frequency. PS/ZnO films were proven as a favorable functional substance for the absorbing of EM waves at lower frequencies.

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