scholarly journals Optical Properties of Composite Structure Based on ZnO Microneedles and Alq3 Thin Film

Author(s):  
Ivan Karbovnyk ◽  
B. Sadoviy ◽  
B. Turko ◽  
A. M. Kostruba ◽  
A. Luchechko ◽  
...  

Abstract The composite material based on ZnO microneedles and Alq3 thin film has been obtained. The photoluminescence study shows a tenfold enhancement in the band-edge UV emission (390 nm) of ZnO microneedles and 2x enhancement in visible emission of the hybrid composite, when excited by 266 nm laser beam. This enhancement can be explained by the interaction between ZnO and Alq3 molecules and the energy transfer from ZnO to Alq3 molecule.

2014 ◽  
Vol 989-994 ◽  
pp. 656-659
Author(s):  
Ping Cao ◽  
Yue Bai

Al co-doped ZnCoO thin film has been prepared by a sol-gel method. The structural and optical properties of the sample were investigated. X-ray diffraction and UV absorption spectroscopy analyses indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.


2008 ◽  
Vol 23 (11) ◽  
pp. 2836-2845 ◽  
Author(s):  
Litty Irimpan ◽  
V.P.N. Nampoori ◽  
P. Radhakrishnan

In this article, we present the spectral and nonlinear optical properties of ZnO–Cu nanocomposites prepared by colloidal chemical synthesis. The emission consisted of two peaks. The 385-nm ultraviolet (UV) peak is attributed to ZnO and the 550-nm visible peak is attributed to Cu nanocolloids. Obvious enhancement of UV and visible emission of the samples is observed and the strongest UV emission of a typical ZnO–Cu nanocomposite is over three times stronger than that of pure ZnO. Cu acts as a sensitizer and the enhancement of UV emission are caused by excitons formed at the interface between Cu and ZnO. As the volume fraction of Cu increases beyond a particular value, the intensity of the UV peak decreases while the intensity of the visible peak increases, and the strongest visible emission of a typical ZnO–Cu nanocomposite is over ten times stronger than that of pure Cu. The emission mechanism is discussed. Nonlinear optical response of these samples is studied using nanosecond laser pulses from a tunable laser in the wavelength range of 450–650 nm, which includes the surface plasmon absorption (SPA) band. The nonlinear response is wavelength dependent and switching from reverse saturable absorption (RSA) to saturable absorption (SA) has been observed for Cu nanocolloids as the excitation wavelength changes from the low absorption window region to higher absorption regime near the SPA band. However, ZnO colloids and ZnO–Cu nanocomposites exhibit induced absorption at this wavelength. Such a changeover in the sign of the nonlinearity of ZnO–Cu nanocomposites, with respect to Cu nanocolloids, is related to the interplay of plasmon band bleach and optical limiting mechanisms. The SA again changes back to RSA when we move over to the infrared region. The ZnO–Cu nanocomposites show self-defocusing nonlinearity and good nonlinear absorption behavior. The nonlinear refractive index and the nonlinear absorption increases with increasing Cu volume fraction at 532 nm. The observed nonlinear absorption is explained through two-photon absorption followed by weak free-carrier absorption and interband absorption mechanisms. This study is important in identifying the spectral range and composition over which the nonlinear material acts as a RSA-based optical limiter. ZnO–Cu is a potential nanocomposite material for the light emission and for the development of nonlinear optical devices with a relatively small limiting threshold.


2015 ◽  
Vol 727-728 ◽  
pp. 280-283
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu

Al doped ZnO thin film have been prepared by a sol-gel method. The structural, and optical properties of the sample were investigated. X-ray diffraction and X-ray absorption spectroscopy analyses and UV absorption spectroscopy analyses indicate that Al3+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.


2021 ◽  
Vol 53 (11) ◽  
Author(s):  
I. Karbovnyk ◽  
B. Sadoviy ◽  
B. Turko ◽  
A. M. Kostruba ◽  
A. Luchechko ◽  
...  

This work discusses the development of innovative transistor from intelligent thin film. A developed semiconductor junction that constitutes the core of concepted transistor is being studied. Each technology of semiconductors has shortage of some performances. The recent work is an alternative by exploiting intelligent materials to build a transistor with transparency and flexibility characteristics. Many processes are encountered during preparation of the film especially chemical deposition and exposition to laser beam to ensure dopants integration. The physical phase is a challenge for newest technology like the plasma. Thereon, we give a real example of smart thin film. The band gap is also a defiance that we are reducing to ameliorate precisely the impedance and thickness and keep at order of nanotechnology. The fabricated junctions are tested by studying their operation in ordinal conditions. We judge the quality of junctions and transistor from their optical properties and electrical ones. Moreover, we analyze evolutions of electrical impedance in function of temperature and optical reflection coefficient.


2014 ◽  
Vol 941-944 ◽  
pp. 1302-1305
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu

Zn0.99-xCo0.01AlxO (x=0, 0.01,) thin films have been prepared by a sol-gel method. The structural and optical properties of the samples were investigated. X-ray diffraction and EDX spectrum indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping,the intensity ratio of the visible to UV emission increases, which is attributed to the increase of O vacancies and Zn interstitials .


2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.


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