scholarly journals Rectifying effect in high-performance ballistic diode bridge with a unique design for thermal energy harvesting

2021 ◽  
Author(s):  
Dinh Cong Nguyen ◽  
Minwook Kim ◽  
Muhammad Hussain ◽  
Van Huy Nguyen ◽  
Yeon-jae Lee ◽  
...  
Keyword(s):  
Thermal Energy ◽  
High Performance ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Electrical Energy ◽  
Mean Free Path ◽  
Thermal Excitation ◽  
Ballistic Regime ◽  
Johnson Noise ◽  
Ballistic Diode

Abstract The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device’s asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device’s estimated responsivities at 38,000 V/W for holes and 23,000 V/W for electrons at room temperature, are among the highest values for a ballistic device reported to date. Due to the device’s zero threshold voltage, it is able to rectify Johnson noise signals converting thermal excitation to electrical energy at room temperature. The bandwidth of the device at the ballistic regime is estimated at ~ 1.1 GHz for holes and 2 GHz for electrons. The device developed in this study is an important step along an innovative pathway that will lead to harvesting electrical energy directly from thermal energy.

A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS

2009 ◽  
Vol 19 (01) ◽  
pp. 23-31 ◽  
Author(s):  
QUENTIN DIDUCK ◽  
HIROSHI IRIE ◽  
MARTIN MARGALA
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Ballistic Transport ◽  
High Mobility ◽  
Mean Free Path ◽  
Material System ◽  
Novel Device ◽  
Ballistic Electron ◽  
Ballistic Deflection Transistor ◽  
Channel Separation

The Ballistic Deflection Transistor (BDT) is a novel device that is based upon an electron steering and a ballistic deflection effect. Composed of an InGaAs - InAlAs heterostructure on an InP substrate, this material system provides a large mean free path and high mobility to support ballistic transport at room temperature. The planar nature of the device enables a two step lithography process, as well, implies a very low capacitance design. This transistor is unique in that no doping junction or barrier structure is employed. Rather, the transistor utilizes a two-dimensional electron gas (2DEG) to achieve ballistic electron transport in a gated microstructure, combined with asymmetric geometrical deflection. Motivated by reduced transit times, the structure can be operated such that current never stops flowing, but rather is only directed toward one of two output drain terminals. The BDT is unique in that it possesses both a positive and negative transconductance region. Experimental measurements have indicated that the transconductance of the device increases with applied drain-source voltage. DC measurements of prototype devices have verified small signal voltage gains of over 150, with transconductance values from 45 to 130 mS/mm depending upon geometry and bias. Gate-channel separation is currently 80nm, and allows for higher transconductance through scaling. The six terminal device enables a normally differential mode of operation, and provides two drain outputs. These outputs, depending on gate bias, are either complementary or non-complementary. This facilitates a wide variety of circuit design techniques. Given the ultralow capacitive design, initial estimates of ft, for the device fabricated with a 430nm gate width, are over a THz.

scholarly journals Optimum design for the ballistic diode based on graphene field-effect transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Van Huy Nguyen ◽  
Dinh Cong Nguyen ◽  
Sunil Kumar ◽  
Minwook Kim ◽  
Dongwoon Kang ◽  
...  
Keyword(s):  
Analytical Model ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Specular Reflection ◽  
Asymmetry Ratio ◽  
Exfoliated Graphene ◽  
Graphene Devices ◽  
Ballistic Diode ◽  
A Current

AbstractWe investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal boron nitride, exhibit strong nonlinear I-V characteristic curves at room temperature. A maximum asymmetry ratio of 1.58 is achieved at a current of 60 µA at room temperature through the ballistic behavior is limited by the thermal effect at higher bias. An analytical model using a specular reflection mechanism of particles is demonstrated to simulate the specular reflection of carriers from graphene edges in the ballistic regime. The overall trend of the asymmetry ratio depending on the geometry fits reasonably with the analytical model.

scholarly journals Fabrication of encapsulated graphene-based heterostructure using molybdenum as edge-contacts

2021 ◽  
Vol 2145 (1) ◽  
pp. 012039
Author(s):  
Illias Klanurak ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Sojiphong Chatraphorn ◽  
Thiti Taychatanapat
Keyword(s):  
Contact Resistance ◽  
Quantum Transport ◽  
High Performance ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Hexagonal Boron Nitride ◽  
High Mobility ◽  
Thin Sheets ◽  
Adhesion Layer ◽  
Twisted Bilayer Graphene

Abstract Graphene is an intriguing platform to study exotic quantum transport phenomena due to its intrinsically high mobility and remarkable electronic properties. To achieve high-performance device, graphene is usually encapsulated between thin sheets of hexagonal boron nitride (hBN) to protect graphene layer from extrinsic impurities. Cr/Au is typically employed to make contacts with the edges of the heterostructure. In this research, Mo is used as an alternative electrode for graphene without adhesion layer to simplify the fabrication process. hBN-graphene-hBN heterostructures were fabricated by a pick-up technique and etched in O2/CHF3 gases to expose graphene edges. Mo contacts were deposited onto the substrates by sputtering. We achieved ohmic contacts between graphene and Mo. The contact resistance reaches the maximum of around 1,300 Ω·μm at charge neutrality point and decreases to 975 Ω·μm at the density of 4×1012 cm−2. We observed that the contact resistance increases over time likely due to the oxidation of Mo but remained ohmic after 2 months. The intrinsic transport characteristics of graphene can still be obtained by using four-probe measurement. Here, we realized a high-quality twisted bilayer graphene device with a room-temperature mobility of 27,000 cm2/V·s indicating that Mo can be used as edge-contacts to probe the transport properties of graphene.

ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

2019 ◽  
pp. 56-66
Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Titanium Carbide ◽  
Temperature Dependence ◽  
Carbon Concentration ◽  
Room Temperature ◽  
Thermodynamic Characteristics ◽  
Liquid Nitrogen Temperature ◽  
Analysis Data ◽  
Thermal Excitation

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

Star-shaped arylacetylene resins derived from silicon

2020 ◽  
Vol 40 (8) ◽  
pp. 676-684
Author(s):  
Niping Dai ◽  
Junkun Tang ◽  
Manping Ma ◽  
Xiaotian Liu ◽  
Chuan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Mechanical Test ◽  
Flexural Modulus ◽  
Mechanical Analysis ◽  
Reinforced Composites ◽  
Scanning Calorimetry ◽  
Chemical Structures ◽  
Structures And Properties ◽  
High Performance Resin

AbstractStar-shaped arylacetylene resins, tris(3-ethynyl-phenylethynyl)methylsilane, tris(3-ethynyl-phenylethynyl) phenylsilane, and tris (3-ethynyl-phenylethynyl) silane (TEPHS), were synthesized through Grignard reaction between 1,3-diethynylbenzene and three types of trichlorinated silanes. The chemical structures and properties of the resins were characterized by means of nuclear magnetic resonance, fourier-transform infrared spectroscopy, Haake torque rheomoter, differential scanning calorimetry, dynamic mechanical analysis, mechanical test, and thermogravimetric analysis. The results show that the melt viscosity at 120 °C is lower than 150 mPa⋅s, and the processing windows are as wide as 60 °C for the resins. The resins cure at the temperature as low as 150 °C. The good processabilities make the resins to be suitable for resin transfer molding. The cured resins exhibit high flexural modulus and excellent heat-resistance. The flexural modulus of the cured TEPHS at room temperature arrives at as high as 10.9 GPa. Its temperature of 5% weight loss (Td5) is up to 697 °C in nitrogen. The resins show the potential for application in fiber-reinforced composites as high-performance resin in the field of aviation and aerospace.

scholarly journals Numerical Evaluation of a HVAC System Based on a High-Performance Heat Transfer Fluid

Energies ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3298
Author(s):  
Gianpiero Colangelo ◽  
Brenda Raho ◽  
Marco Milanese ◽  
Arturo de Risi
Keyword(s):  
Heat Transfer ◽  
High Performance ◽  
Cooling System ◽  
Electrical Energy ◽  
Simulation Software ◽  
Heat Transfer Fluid ◽  
Hvac System ◽  
Dynamic Simulations ◽  
Heating And Cooling ◽  
The University

Nanofluids have great potential to improve the heat transfer properties of liquids, as demonstrated by recent studies. This paper presents a novel idea of utilizing nanofluid. It analyzes the performance of a HVAC (Heating Ventilation Air Conditioning) system using a high-performance heat transfer fluid (water-glycol nanofluid with nanoparticles of Al2O3), in the university campus of Lecce, Italy. The work describes the dynamic model of the building and its heating and cooling system, realized through the simulation software TRNSYS 17. The use of heat transfer fluid inseminated by nanoparticles in a real HVAC system is an innovative application that is difficult to find in the scientific literature so far. This work focuses on comparing the efficiency of the system working with a traditional water-glycol mixture with the same system that uses Al2O3-nanofluid. The results obtained by means of the dynamic simulations have confirmed what theoretically assumed, indicating the working conditions of the HVAC system that lead to lower operating costs and higher COP and EER, guaranteeing the optimal conditions of thermo-hygrometric comfort inside the building. Finally, the results showed that the use of a nanofluid based on water-glycol mixture and alumina increases the efficiency about 10% and at the same time reduces the electrical energy consumption of the HVAC system.

scholarly journals Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1692
Author(s):  
Emmanuel K. Ampadu ◽  
Jungdong Kim ◽  
Eunsoon Oh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Photovoltaic Device ◽  
Photovoltaic Devices ◽  
Temperature Spectrum ◽  
Terahertz Region ◽  
Room Temperature Spectrum ◽  
Ftir Spectrometer ◽  
Titanium Substrates ◽  
Deposition Conditions

We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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