scholarly journals Analysis of Eddy Effect for Cu and CNT Bundle Based Through-Silicon Vias: Impact on Crosstalk and Power

2021 ◽  
Author(s):  
Chopali Chanchal Sahu ◽  
Shubham Anand ◽  
Manoj Kumar Majumder
Keyword(s):  
Eddy Current ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Filler Material ◽  
Filler Materials ◽  
High Frequencies ◽  
Equivalent Circuit Parameters ◽  
Three Dimensional Integrated Circuit ◽  
Silicon Vias ◽  
The Impact

Abstract The performance of a three dimensional integrated circuit primarily depends on the filler material used in through silicon via (TSV). The mostly used filler material Cu is primarily facing severe reliability issues due to the skin effect and electromugration related problems at high frequencies. Therefore, in recent, single- and multi-walled carbon nanotubes (SWCNT and MWCNT) have been emerged as suitable filler materials in TSV. Additionally, at high frequencies, an electrmagetic force primarly induces to an eddy current that adversely affects the overall performance of a TSV. This paper for the first time demonstrates the impact of eddy current on Cu, bundled SWCNT and MWCNT based TSVs. An accurate RLGC circuit model is proposed by considering the eddy effect at the depletion layer and the silicon substrate region. The equivalent circuit parameters are modelled at 7 nm technology using a three line driver-via-load setup. Using the proposed setup, crosstalk and power disspation are analyzed with and without considering the eddy effect. Irrespective of TSV heights, the MWCNT bundle demonstrates substantially lower crosstalk delay, peak noise and power dissipation in comparison to the Cu and SWCNT bundle based TSVs.

scholarly journals Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

2020 ◽  
Vol 10 (3) ◽  
pp. 748
Author(s):  
Dipesh Kapoor ◽  
Cher Ming Tan ◽  
Vivek Sangwan
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electromagnetic Interference ◽  
High Speed ◽  
High Performance ◽  
Near Field ◽  
Three Dimensional ◽  
3D Ic ◽  
Three Dimensional Integrated Circuit ◽  
The Impact

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.

A Micro-channel Cooling Model For a Three-dimensional Integrated Circuit Considering Through-silicon Vias

2020 ◽  
Vol 12 ◽  
Author(s):  
Kang-Jia Wang ◽  
Hong-Chang Sun ◽  
Kui-Zhi Wang
Keyword(s):  
Integrated Circuit ◽  
Heat Dissipation ◽  
Three Dimensional ◽  
Micro Channel ◽  
3D Ic ◽  
Through Silicon Vias ◽  
3D Ics ◽  
Three Dimensional Integrated Circuit ◽  
Silicon Vias ◽  
Cooling Model

Background: With the increase of the integration degree of the three-dimensional integrated circuit(3D IC), the thermal power consumption per unit volume increases greatly, which makes the chip temperature rise. High temperature could affect the performance of the devices and even lead to thermal failure. So, the thermal management for 3D ICs is becoming a major concern. Objective: The aim of the research is to establish a micro-channel cooling model for a three-dimensional integrated circuit(3D IC) considering the through-silicon vias(TSVs). Methods: By studying the structure of the TSVs, the equivalent thermal resistance of each layer is formulated. Then the one-dimensional micro-channel cooling thermal analytical model considering the TSVs was proposed and solved by the existing sparse solvers such as KLU. Results: The results obtained in this paper reveal that the TSVs can effectively improve the heat dissipation, and its maximal temperature reduction is about 10.75%. The theoretical analysis is helpful to optimize the micro-channel cooling system for 3D ICs. Conclusion: The TSV has an important influence on the heat dissipation of 3D IC, which can improve its heat dissipation characteristic

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

VERY HIGH-ORDER SPATIALLY IMPLICIT SCHEMES FOR COMPUTATIONAL ACOUSTICS ON CURVILINEAR MESHES

2001 ◽  
Vol 09 (04) ◽  
pp. 1259-1286 ◽  
Author(s):  
MIGUEL R. VISBAL ◽  
DATTA V. GAITONDE
Keyword(s):  
Three Dimensional ◽  
Radiation Condition ◽  
Higher Order ◽  
High Order ◽  
High Frequencies ◽  
Decomposition Strategies ◽  
The Impact ◽  
Spurious Modes ◽  
Very High ◽  
Computational Strategy

A high-order compact-differencing and filtering algorithm, coupled with the classical fourth-order Runge–Kutta scheme, is developed and implemented to simulate aeroacoustic phenomena on curvilinear geometries. Several issues pertinent to the use of such schemes are addressed. The impact of mesh stretching in the generation of high-frequency spurious modes is examined and the need for a discriminating higher-order filter procedure is established and resolved. The incorporation of these filtering techniques also permits a robust treatment of outflow radiation condition by taking advantage of energy transfer to high-frequencies caused by rapid mesh stretching. For conditions on the scatterer, higher-order one-sided filter treatments are shown to be superior in terms of accuracy and stability compared to standard explicit variations. Computations demonstrate that these algorithmic components are also crucial to the success of interface treatments created in multi-domain and domain-decomposition strategies. For three-dimensional computations, special metric relations are employed to assure the fidelity of the scheme in highly curvilinear meshes. A variety of problems, including several benchmark computations, demonstrate the success of the overall computational strategy.

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