Impact of Substrate Temperature on Structural, electric and Optical characteristics of CuO Thin Films grown by JNS Pyrolysis Technique

Abstract JNS pyrolysis route has been successfully employed to grow CuO thin films at various substrate temperature, ranging from 300 to 600˚C. The XRD analyses revealed the monoclinic phased polycrystalline growth of the samples and exhibited the strong influence of the substrate temperature (ST) on the crystallite sizes. Optical transmission and bandgap studies also showed that sample bandgaps clearly rely upon the growth temperatures. The SEM micrographs displayed the agglomerated growth of particles having golf ball-like structures. The occurrence of Cu and O in the samples were confirmed through EDS analyses. The studies on DC electrical conductivities also shows strong dependency on the ST. A p-CuO/n-Si diode was fabricated at the ST of 600˚C and the diode parameters like barrier height ( ϕb ) and ideality factor (n) were determined under light and dark conditions.

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Impact of Substrate Temperature on Structural, Electric and Optical Characteristics of CuO Thin Films Grown by JNS Pyrolysis Technique

Silicon ◽

10.1007/s12633-021-01578-3 ◽

2022 ◽

Author(s):

N. Jhansi ◽

D. Balasubramanian ◽

Jih-Hsing Chang ◽

K. Mohanraj ◽

R. Marnadu ◽

...

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Optical Characteristics

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Ohmic and rectifying contacts to n-SiC formed by energetic deposition of carbon

MRS Proceedings ◽

10.1557/opl.2014.570 ◽

2014 ◽

Vol 1693 ◽

Cited By ~ 1

Author(s):

Masturina Kracica ◽

Jim G. Partridge ◽

Dougal G. McCulloch ◽

Patrick W. Leech ◽

Anthony S. Holland ◽

...

Keyword(s):

Elevated Temperature ◽

Substrate Temperature ◽

Barrier Height ◽

Ideality Factor ◽

Room Temperature ◽

Ohmic Contacts ◽

Average Energy ◽

Electrical Contacts ◽

Electrical Characteristics ◽

Temperature Deposition

ABSTRACTEnergetically-deposited carbon contacts to n-type 6H-SiC have exhibited either insulating, rectifying or ohmic electrical characteristics depending on the average energy of the depositing flux and the substrate temperature. Deposition at room temperature and at a low-medium average energy (<500 eV) has resulted in carbon with a low graphitic content and insulating electrical contacts. With higher average energy and at a moderately elevated temperature (∼100 °C), the higher graphitic content contacts were rectifying with an ideality factor, η, of ∼1.8 and barrier height of ∼0.88 eV. Oriented graphitic carbon deposited at 200 °C with biases exceeding 300 V formed ohmic contacts.

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Influence of Substrate Temperature on Structure and Optical Property of Cu3N Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.152-153.218 ◽

2010 ◽

Vol 152-153 ◽

pp. 218-221

Author(s):

Jian Rong Xiao ◽

Ai Hua Jiang ◽

Ye Guang Liang

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Optical Transmission ◽

X Ray Diffraction ◽

Compact Structure ◽

Copper Nitride ◽

X Ray ◽

Atomic Force ◽

Influence Of Substrate ◽

Substrate Temperatures

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at various substrate temperatures. The surface morphology and crystal structure of the thin films were characterized by atomic force microscope (AFM) and X-ray diffraction (XRD), respectively. The AFM images demonstrate that the films have a compact structure. The XRD test indicates that growth orientation of the thin films prefers the (111) or (100) at different substrate temperature. The optical transmission properties of the thin films were obtained by an ultraviolet visible spectrometer. The optical band gap of the thin films decreases with increasing substrate temperature.

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Influence of Substrate Temperature on the Characteristics of Zinc Oxide Thin Films Deposited by Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.502.111 ◽

2012 ◽

Vol 502 ◽

pp. 111-115

Author(s):

J.H. Gu ◽

Z.Y. Zhong ◽

X. He ◽

J. Hou ◽

C.Y. Yang

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Visible Spectrum ◽

Optical Characteristics ◽

Zno Thin Films ◽

Zno Films ◽

Sintered Ceramic ◽

Influence Of Substrate

Zinc oxide (ZnO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target and pure argon gas. The influence of substrate temperature on microstructure and optical characteristics of the deposited films were investigated by X-ray diffractometer (XRD) and spectrophotometer. The results demonstrate that all the ZnO films have preferred orientation along (002) direction. The substrate temperature significantly affects the crystalline quality and optical characteristics of the ZnO thin films. With the increase of substrate temperature, the mean grain size, lattice spacing and optical bandgap of the films increase, the dislocation density and micro strain decrease, and the average transmitance in the wavelength range of the visible spectrum also increases.

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Ir Laser-Induced Deposition of Silicon Thin Films

MRS Proceedings ◽

10.1557/proc-17-215 ◽

1982 ◽

Vol 17 ◽

Cited By ~ 8

Author(s):

T. R. Gattuso ◽

M. Meunier ◽

D. Adler ◽

J. S. Haggerty

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Flow Rate ◽

Laser Power ◽

Deposition Rates ◽

Optical Gap ◽

Silicon Thin Films ◽

Ir Laser ◽

Electrical Conductivities ◽

Reactor Pressure

ABSTRACTThe deposition of a-Si:H by means of CO2 laser-induced pyrolysis of silane gas is described. Deposition rates were found to increase with increasing silane flow rate, reactor pressure, laser power and substrate temperature. Spin density decreased and both optical gap, and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported.

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Strong influence of substrate temperature on the growth of nanocrystalline MoO3 thin films

Physics Letters A ◽

10.1016/j.physleta.2009.08.058 ◽

2009 ◽

Vol 373 (43) ◽

pp. 3965-3968 ◽

Cited By ~ 24

Author(s):

Wei-Qing Yang ◽

Zhao-Rong Wei ◽

Xing-Hua Zhu ◽

Ding-Ying Yang

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Strong Influence ◽

Influence Of Substrate

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Electrical characterization of rf sputtered TiN thin films on III–V semiconductors

Canadian Journal of Physics ◽

10.1139/p92-173 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 1076-1081 ◽

Cited By ~ 1

Author(s):

Zhengda Pang ◽

Mohamed Boumerzoug ◽

Roman V. Kruzelecky ◽

Peter Mascher ◽

John G. Simmons ◽

...

Keyword(s):

Thin Films ◽

Barrier Height ◽

Ideality Factor ◽

Elevated Temperatures ◽

Electrical Characterization ◽

Optical Emission ◽

Tin Thin Films ◽

Optimized Conditions

TiN thin films were deposited on GaAs and InP by rf reactive sputtering. Samples of TiN/GaAs and TiN/InP then were investigated by a multitude of techniques to evaluate the morphology of as-deposited and post-annealed films and to investigate contact properties such as barrier height, carrier concentration, and ideality factor. Optical emission spectroscopy was used as an in situ process control to optimize certain film properties. The results show that the deposition conditions, such as total pressure, N2/Ar flow ratio, and substrate temperature, have an important effect on the properties of the resulting films. Under optimized conditions, near-stoichiometric TiN films with resistivities as low as 20 μΩ cm were obtained. Rapid thermal annealing (RTA) of TiN/GaAs enhanced the barrier height and improved the ideality factor of these diodes. These systems were stable after RTA at temperatures as high as 800 °C. As-deposited TiN on InP, in contrast, typically exhibits nonrectifying behaviour. The characteristics become more ohmic after RTA at elevated temperatures.

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I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

Journal of Nanomaterials ◽

10.1155/2013/579131 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6

Author(s):

M. Erkovan ◽

E. Şentürk ◽

Y. Şahin ◽

M. Okutan

Keyword(s):

Thin Films ◽

Barrier Height ◽

Ideality Factor ◽

Photoelectron Spectroscopy ◽

Schottky Diodes ◽

Thermionic Emission ◽

Native Oxide ◽

Analysis Technique ◽

Current Voltage ◽

P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

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