scholarly journals Double Electron Spin Resonance of Engineered Atomic Structures on a Surface

2021 ◽  
Author(s):  
Soo-Hyon Phark ◽  
Yi Chen ◽  
Christoph Wolf ◽  
Hong Bui ◽  
Yu Wang ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Double Resonance ◽  
Atomic Scale ◽  
Single Atom ◽  
Scanning Tunneling ◽  
Atomic Structures ◽  
Weakly Coupled ◽  
Spin Resonance ◽  
Qubit Operations ◽  
Scale Control

Abstract Atomic-scale control of multiple spins with individual addressability enables the bottom-up design of functional quantum devices. Tailored nanostructures can be built with atomic precision using scanning tunneling microscopes, but quantum-coherent driving has thus far been limited to a spin in the tunnel junction. Here we show the ability to drive and detect the spin resonance of a remote spin using the electric field from the tip and a single-atom magnet placed nearby. Read-out was achieved via a weakly coupled second spin in the tunnel junction that acted as a quantum sensor. We simultaneously and independently drove the sensor and remote spins by two radio frequency voltages in double resonance experiments, which provides a path to quantum-coherent multi-spin manipulation in customized spin structures on surfaces. One-Sentence Summary: Using a scanning tunneling microscope, we simultaneously control two spins using one tip, paving the way for multi-spin-qubit operations on surfaces.

A Scanning Tunneling Microscope as a Tunable Nanoantenna for Atomic Scale Control of Optical-Field Enhancement

Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 3857-3862 ◽  
Author(s):  
Damien Riedel ◽  
Roger Delattre ◽  
Andrey G. Borisov ◽  
Tatiana V. Teperik
Keyword(s):  
Scanning Tunneling Microscope ◽  
Field Enhancement ◽  
Optical Field ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Scale Control

scholarly journals Hyperfine interaction of individual atoms on a surface

Science ◽  
2018 ◽  
Vol 362 (6412) ◽  
pp. 336-339 ◽  
Author(s):  
Philip Willke ◽  
Yujeong Bae ◽  
Kai Yang ◽  
Jose L. Lado ◽  
Alejandro Ferrón ◽  
...  
Keyword(s):  
Hyperfine Interaction ◽  
Atomic Scale ◽  
Single Atom ◽  
Scanning Tunneling ◽  
Oxide Surface ◽  
Nuclear Spins ◽  
Tunneling Microscopy ◽  
Magnesium Oxide Surface ◽  
State Mixing ◽  
And Control

Taking advantage of nuclear spins for electronic structure analysis, magnetic resonance imaging, and quantum devices hinges on knowledge and control of the surrounding atomic-scale environment. We measured and manipulated the hyperfine interaction of individual iron and titanium atoms placed on a magnesium oxide surface by using spin-polarized scanning tunneling microscopy in combination with single-atom electron spin resonance. Using atom manipulation to move single atoms, we found that the hyperfine interaction strongly depended on the binding configuration of the atom. We could extract atom- and position-dependent information about the electronic ground state, the state mixing with neighboring atoms, and properties of the nuclear spin. Thus, the hyperfine spectrum becomes a powerful probe of the chemical environment of individual atoms and nanostructures.

MANIPULATING ATOMS ONE BY ONE WITH A SCANNING TUNNELING MICROSCOPE

1996 ◽  
Vol 03 (03) ◽  
pp. 1463-1472 ◽  
Author(s):  
DEHUAN HUANG ◽  
YOSHIHISA YAMAMOTO
Keyword(s):  
Electronic Devices ◽  
Hydrogen Desorption ◽  
Atomic Scale ◽  
Single Atom ◽  
Scanning Tunneling ◽  
Crystallographic Position ◽  
Hydrogen Atoms ◽  
Vacancy Defects ◽  
Scale Structures ◽  
A Chain

By using an STM operated in ultrahigh vacuum, we can extract single Si atoms from any predetermined positions of the Si(111)-(7×7) surface through field evaporation. This technique enables us to create novel atomic-scale structures, and even to fabricate a single atom groove and chain on the surface. The extracted Si atoms can be redeposited onto the surface, although the crystallographic position of these deposited Si atoms changes as their density increases. We have demonstrated that natural Si vacancy defects existing on the surface can be repaired by this technique. The deposited Si atoms can be reremoved by picking them up again with the tip, the substrate atomic arrangement remaining unperturbed. We can also remove individual hydrogen atoms from hydrogen-passivated Si(100)-(2×1) surfaces. A chain with equal separation of Si dimers produced by hydrogen desorption has been created. These results demonstrate the potential of STM for the construction of electronic devices with atomic dimensions.

scholarly journals Engineering atomic-scale magnetic fields by dysprosium single atom magnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
A. Singha ◽  
P. Willke ◽  
T. Bilgeri ◽  
X. Zhang ◽  
H. Brune ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Magnetic Nanostructures ◽  
Atomic Scale ◽  
Single Atom ◽  
Quantum Tunnelling ◽  
Spin Resonance ◽  
Tunnelling Microscopy ◽  
Magnetic Stability ◽  
Control Of Quantum Systems ◽  
Magnetic States

AbstractAtomic scale engineering of magnetic fields is a key ingredient for miniaturizing quantum devices and precision control of quantum systems. This requires a unique combination of magnetic stability and spin-manipulation capabilities. Surface-supported single atom magnets offer such possibilities, where long temporal and thermal stability of the magnetic states can be achieved by maximizing the magnet/ic anisotropy energy (MAE) and by minimizing quantum tunnelling of the magnetization. Here, we show that dysprosium (Dy) atoms on magnesium oxide (MgO) have a giant MAE of 250 meV, currently the highest among all surface spins. Using a variety of scanning tunnelling microscopy (STM) techniques including single atom electron spin resonance (ESR), we confirm no spontaneous spin-switching in Dy over days at ≈ 1 K under low and even vanishing magnetic field. We utilize these robust Dy single atom magnets to engineer magnetic nanostructures, demonstrating unique control of magnetic fields with atomic scale tunability.

Resolution in the scanning tunneling microscope

1991 ◽  
Vol 49 ◽  
pp. 488-489
Author(s):  
R. J. Wilson ◽  
D. D. Chambliss ◽  
S. Chiang ◽  
V. M. Hallmark
Keyword(s):  
Scanning Tunneling Microscope ◽  
Fundamental Principle ◽  
Atomic Scale ◽  
Lateral Resolution ◽  
Scanning Tunneling ◽  
Electronic Noise ◽  
Vertical Resolution ◽  
Tunneling Microscopy ◽  
Spatial Profile ◽  
Theoretical Analyses

Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Scanning tunneling microscopy of polymers: A status report

1989 ◽  
Vol 47 ◽  
pp. 330-331
Author(s):  
P.E. Russell ◽  
I.H. Musselman
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Sample Surface ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Status Report ◽  
Tunneling Microscopy ◽  
Research Issues ◽  
Wide Range

Scanning tunneling microscopy (STM) has evolved rapidly in the past few years. Major developments have occurred in instrumentation, theory, and in a wide range of applications. In this paper, an overview of the application of STM and related techniques to polymers will be given, followed by a discussion of current research issues and prospects for future developments. The application of STM to polymers can be conveniently divided into the following subject areas: atomic scale imaging of uncoated polymer structures; topographic imaging and metrology of man-made polymer structures; and modification of polymer structures. Since many polymers are poor electrical conductors and hence unsuitable for use as a tunneling electrode, the related atomic force microscopy (AFM) technique which is capable of imaging both conductors and insulators has also been applied to polymers.The STM is well known for its high resolution capabilities in the x, y and z axes (Å in x andy and sub-Å in z). In addition to high resolution capabilities, the STM technique provides true three dimensional information in the constant current mode. In this mode, the STM tip is held at a fixed tunneling current (and a fixed bias voltage) and hence a fixed height above the sample surface while scanning across the sample surface.

Development of the UHV-STM

1990 ◽  
Vol 48 (1) ◽  
pp. 322-323
Author(s):  
M. Iwatsuki ◽  
S. Kitamura ◽  
A. Mogami
Keyword(s):  
Surface Science ◽  
Real Space ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Great Promise ◽  
Force Microscopy ◽  
Atomic Force ◽  
Stm Image ◽  
Surface Construction ◽  
Very High

Since Binnig, Rohrer and associates observed real-space topographic images of Si(111)-7×7 and invented the scanning tunneling microscope (STM),1) the STM has been accepted as a powerful surface science instrument.Recently, many application areas for the STM have been opened up, such as atomic force microscopy (AFM), magnetic force microscopy (MFM) and others. So, the STM technology holds a great promise for the future.The great advantages of the STM are its high spatial resolution in the lateral and vertical directions on the atomic scale. However, the STM has difficulty in identifying atomic images in a desired area because it uses piezoelectric (PZT) elements as a scanner.On the other hand, the demand to observe specimens under UHV condition has grown, along with the advent of the STM technology. The requirment of UHV-STM is especially very high in to study of surface construction of semiconductors and superconducting materials on the atomic scale. In order to improve the STM image quality by keeping the specimen and tip surfaces clean, we have built a new UHV-STM (JSTM-4000XV) system which is provided with other surface analysis capability.

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