Effect of The Nickel And Temperature Dependent Electrical Properties C-SiO2 -Ni Composites
Abstract The sol-gel method was chosen to synthesize C-SiO2/Ni nanocomposites, silica nanofillers were incorporated into a carbon based on resorcinol-formaldehyde (RF), doped with 5% nickel. During preparation process, they were subjected to a heat treatment of different pyrolysis temperatures and under an inert atmosphere for 2 h. The X- ray diffractogram presented by XRD of the samples treated at low temperatures, indicates the presence of characteristic lines of metallic nickel. FTIR analysis shows the presence of a main band located at about 1050 cm-1, which corresponds to the vibrations of Si-O-Si. From electrical characterizations, the C-SiO2-Ni5%-650 sample has a negative differential resistance behavior (NDR) at low measurement temperatures. According to the I-V characterization, the C-SiO2-Ni5%-625 °C nanocomposite reveals the NDR behavior at room temperature. The conduction mechanism was fitted by two models: the hopping conduction model for the nanocomposite, treated at 650 °C, and the small polaron model for the composite treated at 675 °C.