Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure

A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium nitride (AlN/GaN) superlattice structure (SLS) in the growth of the LED. The luminescence and the crystalline properties of the LED were discussed. From photoluminescence (PL) surface mapping measurement, the emission wavelength of the LED (453 nm) was almost uniform across the LED epi-wafer area. Temperaturedependent PL revealed that the dominant emission peak of the LED was 2.77 eV at all temperatures. The emission peak was related to the quantum wells of the LED. Some additional peaks were also observed, in particular at lower temperatures. These peaks were associated to alloy fluctuations in the In0.11Ga0.89N/ In0.02Ga0.98N multiquantum wells (MQWs) of the LED. Furthermore, the dependence of PL intensity and PL decay time on temperature revealed the evidence related to indium and/or interface fluctuations of the quantum wells. From X-ray diffraction (XRD) ω-scan measurements, fringes of the AlN/GaN SLS were clear, indicating the SLS were grown with good interface abruptness. However, the fringes for the MQWs were less uniform, indicating another evidence of the alloy fluctuations in the MQWs. XRD-reciprocal surface mapping (RSM) measurement showed that all epitaxial layers of the LED were grown coherently, and the LED was fully under strain.

Download Full-text

Characterization and Fabrication of InGaN-based Blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate

MRS Proceedings ◽

10.1557/proc-1167-o04-01 ◽

2009 ◽

Vol 1167 ◽

Author(s):

Bin Abu Bakar Ahmad Shuhaimi ◽

Chian Khai Pum ◽

Takaaki Suzue ◽

Yukiyasu Nomura ◽

Takashi Egawa

Keyword(s):

Light Emitting Diode ◽

Xrd Analysis ◽

Electrical Characteristics ◽

X Ray Diffraction ◽

Surface Mapping ◽

Light Emitting ◽

Cladding Layer ◽

Current Voltage ◽

Strained Layer Superlattices ◽

Multi Quantum Well

AbstractThis paper reports improved optical characteristics of InGaN-based light-emitting-diode (LED) grown on Si(111) substrate by the insertion of an Al0.06Ga0.94N/GaN strained-layer-superlattices (SLS) cladding layer after AlN/GaN multilayer (ML) growth, under the multi-quantum-well (MQW) active layer. The insertion of underlying Al0.06Ga0.94N/GaN SLS cladding layer has shown to improve epitaxial layer quality in x-ray diffraction (XRD) analysis, reduce wavelength peak fluctuations in photoluminescence (PL) surface mapping, and improve optical and electrical characteristics of the LED sample. A 34% increase of light intensity at 50 mA current injection and a narrower wavelength peak have been achieved by the insertion of Al0.06Ga0.94N/GaN SLS cladding layer. LED with underlying Al0.06Ga0.94N/GaN also shows superior current-voltage (I-V) characteristics with operation voltage of 3.2 V at 20 mA and series resistance of 16 Ω.

Download Full-text

Effect of anionic group [SiO4]4−/[PO4]3− on the luminescence properties of Dy3+-doped tungstate structural compounds

Journal of Advanced Ceramics ◽

10.1007/s40145-021-0478-x ◽

2021 ◽

Author(s):

Ning Liu ◽

Lefu Mei ◽

Jianxiong Bin ◽

Ze Zhang ◽

Zhijian Peng

Keyword(s):

Solid Phase ◽

Light Emitting Diode ◽

Emission Peak ◽

Luminescence Properties ◽

X Ray Diffraction ◽

Yellow Light ◽

Light Emitting ◽

X Ray ◽

Fluorescent Materials ◽

Optimum Doping Concentration

AbstractNovel scheelite structures of Li2Ca(WO4)2, Li2Ca2(WO4)(SiO4), and LiCa2(WO4)(PO4) fluorescent materials were successfully prepared using a high-temperature solid-phase process. The compounds were characterized by X-ray diffraction and energy dispersive spectroscopy. The tests revealed that the substitution of [WO4]2− by [SiO4]4− or [PO4]3− tetrahedron in tungstate had no significant influence on the crystal structure of the Li2Ca(WO4)2. When Dy3+ ions were introduced as an activator at an optimum doping concentration of 0.08 mol%, all of the as-prepared phosphors generated yellow light emissions, and the emission peak was located close to 576 nm. Replacing [WO4]2− with [SiO4]4− or [PO4]3− tetrahedron significantly increased the luminescence of the Li2Ca(WO4)2 phosphors. Among them, the LiCa2(WO4)(PO4):0.08Dy3+ phosphor had the best luminescence properties, decay life (τ = 0.049 ms), and thermal stability (87.8%). In addition, the as-prepared yellow Li2Ca(WO4)2:0.08Dy3+, Li2Ca2(WO4)(SiO4):0.08Dy3+, and LiCa2(WO4)(PO4):0.08Dy3+ phosphor can be used to fabricate white light emitting diode (LED) devices.

Download Full-text

&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

MRS Proceedings ◽

10.1557/proc-0989-a10-05 ◽

2007 ◽

Vol 989 ◽

Author(s):

Gong-Ru Lin ◽

Chun-Jung Lin

Keyword(s):

Light Emitting Diode ◽

Optical Power ◽

Oxide Semiconductor ◽

Si Substrate ◽

Light Emitting ◽

Pillar Array ◽

Turn On ◽

Air Interface ◽

Order Of Magnitude ◽

Etching Mask

AbstractA Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

Download Full-text

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Microelectronics International ◽

10.1108/mi-02-2021-0017 ◽

2021 ◽

Vol ahead-of-print (ahead-of-print) ◽

Author(s):

Mohd Ann Amirul Zulffiqal Md Sahar ◽

Zainuriah Hassan ◽

Sha Shiong Ng ◽

Way Foong Lim ◽

Khai Shenn Lau ◽

...

Keyword(s):

Surface Morphology ◽

Quantum Wells ◽

Ultraviolet Light ◽

Light Output ◽

Emission Peak ◽

Organic Chemical ◽

Peak Wavelength ◽

Content Type ◽

Light Emitting ◽

Near Ultraviolet

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

Download Full-text

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-722-k1.7 ◽

2002 ◽

Vol 722 ◽

Author(s):

Mee-Yi Ryu ◽

C. Q. Chen ◽

E. Kuokstis ◽

J. W. Yang ◽

G. Simin ◽

...

Keyword(s):

Quantum Wells ◽

Light Emitting Diode ◽

Chemical Vapor ◽

Excitation Power ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Excitation Power Density ◽

Light Emitting ◽

Uv Emission ◽

Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Download Full-text

(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

ECS Transactions ◽

10.1149/06104.0071ecst ◽

2014 ◽

Vol 61 (4) ◽

pp. 71-78

Author(s):

S.-J. Lee ◽

H.-J. Park ◽

J.-B. Park ◽

D.-W. Jeon ◽

J. H. Baek ◽

...

Keyword(s):

Large Scale ◽

Light Emitting Diode ◽

Si Substrate ◽

High Brightness ◽

Light Emitting

Download Full-text

A Monolithic White-Light LED Based on GaN Doped with Be

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.93.264 ◽

2014 ◽

Vol 93 ◽

pp. 264-269 ◽

Cited By ~ 1

Author(s):

Henryk Teisseyre ◽

Michal Bockowski ◽

Toby David Young ◽

Szymon Grzanka ◽

Yaroslav Zhydachevskii ◽

...

Keyword(s):

Gallium Nitride ◽

White Light ◽

Light Emission ◽

Light Emitting Diode ◽

Yellow Emission ◽

Bulk Crystals ◽

Light Emitting ◽

Type Conductivity ◽

P Type ◽

Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

Download Full-text