Effects of Acceptor Doping and Oxygen Stoichiometry on the Properties of Sputter-Deposited P-Type Rocksalt Ni xZn 1-XO (0.3≤ x≤1.0) Alloys

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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High-bias current voltage temperature characteristics of undoped rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon heterojunctions

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/1/302 ◽

2002 ◽

Vol 18 (1) ◽

pp. 7-22 ◽

Cited By ~ 35

Author(s):

M M Abdul-Gader Jafar

Keyword(s):

Boron Carbide ◽

Crystalline Silicon ◽

Bias Current ◽

Current Voltage ◽

High Bias ◽

Rf Magnetron Sputter ◽

Magnetron Sputter ◽

Silicon Heterojunctions ◽

Sputter Deposited ◽

P Type

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Behavior of W and WSix Contact Metallization on n- and p- Type GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003252 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 684-690

Author(s):

X. A. Cao ◽

F. Ren ◽

J. R. Lothian ◽

S. J. Pearton ◽

C. R. Abernathy ◽

...

Keyword(s):

Contact Resistance ◽

Annealing Temperature ◽

Specific Contact Resistance ◽

Ohmic Behavior ◽

Contact Metallization ◽

Specific Contact ◽

Heavily Doped ◽

Sputter Deposited ◽

Optimum Annealing Temperature ◽

P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

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Enhancement of thermoelectric performance through synergy of Pb acceptor doping and superstructure modulation for p-type Bi2Te3

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-019-02631-z ◽

2019 ◽

Vol 31 (2) ◽

pp. 1200-1209 ◽

Cited By ~ 1

Author(s):

Wei Wu ◽

Wenxin Liu ◽

Fengrong Yu

Keyword(s):

Thermoelectric Performance ◽

Acceptor Doping ◽

P Type

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Large thermoelectric power variations in epitaxial thin films of layered perovskite GdBaCo2O5.5±δ with a different preferred orientation and strain

Journal of Materials Chemistry A ◽

10.1039/d0ta04781c ◽

2020 ◽

Vol 8 (38) ◽

pp. 19975-19983

Author(s):

Arindom Chatterjee ◽

Emigdio Chavez-Angel ◽

Belén Ballesteros ◽

José Manuel Caicedo ◽

Jessica Padilla-Pantoja ◽

...

Keyword(s):

Thin Films ◽

Thermoelectric Power ◽

Thermoelectric Properties ◽

Tensile Strain ◽

Preferred Orientation ◽

Oxygen Stoichiometry ◽

Layered Perovskite ◽

Epitaxial Thin Films ◽

P Type

Oxygen stoichiometry in epitaxial GdBaCo2O5.5±δ films accommodates the strain, which substantially affects thermoelectric properties, bringing the material from p-type (tensile strain c⊥-oriented on STO) to n-type thermopower (compressive b⊥ on LAO).

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